Journals 1 페이지 | 포항공대 EESL

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Total 14건 1 페이지

2012
14

S.K. Lee, C.G. Kang, Y.G. Lee, C. Cho, E.J. Park, H.J. Chung, S. Seo, H.D. Lee, B.H. Lee, "Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices" Carbon, 50 (11), 4046-4051, 2012.09. http://doi.org/10.1016/j.carbon.2012.04.051.
13

S. Park, S. Jung, M. Siddik, M. Jo, J. Park, S. Kim, W. Lee, J. Shin, D. Lee, G. Choi, J. Woo, E. Cha, B.H. Lee, H. Hwang, "Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications" physica status solidi (RRL) - Rapid Research Letters, 6 (11), 454-456, 2012.11. http://doi.org/10.1002/pssr.201206382.
12

M. Choe, W. Park, J.W. Kang, S.H. Jeong, W.K. Hong, B.H. Lee, S.J. Park, T. Lee, "Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors" Nanotechnology, 23 (48), 485201, 2012.12.07. http://doi.org/10.1088/0957-4484/23/48/485201.
11

U. Jung, Y.G. Lee, J.J. Kim, S.K. Lee, I. Mejia, A. Salas-Vwilasenor, M. Quevedo-Lopez, B.H. Lee, "Indicators of mobility extraction error in bottom gate CdS metal-oxide-semiconductor field-effect transistors" Applied Physics Letters, 101 (18), 182106, 2012.10.29. http://doi.org/10.1063/1.4765067.
10

S. Park, J. Park, S. Kim, W. Lee, B.H. Lee, H. Hwang, "Programmable analogue circuits with multilevel memristive device" Electronics Letters, 48 (22), 1415, 2012.10.25. http://doi.org/10.1049/el.2012.3179.
9

W.T. Lee, J.B. Park, S.H. Kim, J. Woo, J. Shin, G. Choi, S.S. Park, D.S. Lee, E. Cha, B.H. Lee, H. Hwang, "High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector-One Resistor Arrays" ACS Nano, 6 (9), 8166-8172, 2012.09.25. http://doi.org/10.1021/nn3028776.
8

S.K. Lee, M.S.Jo, C.W. Sohn, C.Y. Kang, J.C. Lee, Y.H. Jeong, B.H. Lee, "New Insight Into PBTI Evaluation Method for nMOSFETs With Stacked High-k/IL Gate Dielectric" IEEE Electron Device Letters, 33 (11), 1517-1519, 2012.11. http://doi.org/10.1109/LED.2012.2211072.
7

S.C. Lee, J.-S. Yeo, Y.S. Ji, C. Cho, D.Y. Kim, S.I. Na, B.H. Lee, T. Lee,, "Flexible organic solar cells composed of P3HT:PCBM using chemically doped graphene electrodes" Nanotechnology, 23 (34), 344013, 2012.08.31. http://doi.org/10.1088/0957-4484/23/34/344013.
6

Y. Kim, Y.G. Lee, M. Kim, C.G. Kang, U. Jung, J.J. Kim, S.C. Song, J. Blatchford, B. Kirkpatrick, H. Niimi, K.Y. Lim, B.H. Lee, "Capacitance Analysis of Highly Leaky Al2O3 MIM Capacitors Using Time Domain Reflectometry" IEEE Electron Device Letters, 33 (9), 1303-1305, 2012.09. http://doi.org/10.1109/LED.2012.2205213.
5

M.H. Choe, C.-Y. Cho, J.-P. Shim, W.J. Park, S.K. Lim, W.-K. Hong, B.H. Lee, D.S. Lee, S.J. Park, T. Lee, "Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices" Applied Physics Letters, 101 (3), 031115, 2012.07.16. http://doi.org/10.1063/1.4737637.
4

S. Cimino, A. Padovani, L. Larcher, V.V. Afanas’ev, H.J. Hwang, Y.G. Lee, M. Jurczac, D. Wouters, B.H. Lee, H. Hwang, L. Pantisano, "A study of the leakage current in TiN/HfO2/TiN capacitors" Microelectronic Engineering, 95, 71-73, 2012.07. http://doi.org/10.1016/j.mee.2011.03.009.
3

J.J. Kim, M. Cho, L. Pantisano, Y.G. Lee, U. Jung, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, B.H. Lee, "Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs" IEEE Electron Device Letters, 33 (7), 937-939, 2012.05.16. http://doi.org/10.1109/LED.2012.2193868.
2

S.C. Lee, G. Jo, S.J. Jang, W. Park, Y.H. Kahng, D.Y. Kim, B.H. Lee, T.H. Lee, "Characterization on Improved Effective Mobility of Pentacene Organic Field-Effect Transistors Using Graphene Electrodes" Japanese Journal of Applied Physics, 51 (2), 02BK09, 2012.02.20. http://doi.org/10.1143/JJAP.51.02BK09.
1

B.H. Lee, Y.G. Lee, U.J. Jung, Y.H. Kim, H.J. Hwang, J.J. Kim, C.G. Kang, "Issues with the electrical characterization of graphene devices" Carbon letters, 13 (1), 23-28, 2012.01.31 (invited). http://doi.org/10.5714/CL.2012.13.1.023.

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