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Total 329건 10 페이지

2006
59

K .Choi, H.N. Alshareef, H.C. Wen, R.Harris, H.Luan, Y. Senzaki, P. Lysaght, P. Majhi and B. H. Lee, "Effective Work Function Modulation of atomic-layer-deposition-TaN film by capping layer" Appl. Phys. Lett., 89, 032113, 2006.07.21. https://doi.org/10.1063/1.2234288.
58

H.C. Wen, R. Choi, G.A.Brown, T.Boscke, K.Matthews, H.R.Harris, K.Choi, H.N.Alshareef, H.Luan, G.Bersuker, P.Majhi, D.L.Kwong, and B. H. Lee, "Comparison of effective work function extraction methods using capacitance and current measurement techniques" IEEE Elec. Dev. Lett., 27(7), 598, 2006.06.26. 10.1109/LED.2006.876324.
57

B.H. Lee, J.W. Oh, H.H. Tseng, R. Jammy and H. Huff, "Gate Stack Technology for Nano Scale Devices: Current and Future Challenges" Materials Today, 9(6), 32, 2006.05.31. https://doi.org/10.1016/S1369-7021(06)71541-3.
56

C.D. Young, D. Heh, S. Nadkarni, R. Choi, J.J. Peterson, J. Barnett, B. H. Lee, and G. Bersuker, "Electron Trap Generation in High-k Gate Stacks by Constant Voltage Stress" IEEE Trans. Dev. Mat. Reliability, 6(2), 123-131, 2006.08.14. 10.1109/TDMR.2006.877865.
55

S. C. Song, Z. Zhang, C. Huffman, J. H. Sim, S. H. Bae, P. Kirsch, P. Majhi, N. Moumen, and B. H. Lee, "Highly Manufacturable Advanced Gate Stack Technology for Sub 45nm Self-Aligned Gate-First CMOSFETs" IEEE Trans. on Elec. Dev., 53(5), 979-989, 2006.04.24. 10.1109/TED.2006.872700.
54

S. C. Song, Z. Zhang, C. Huffman, S. H Bae, J. H. Sim, and B. H. Lee, "Improved Gate-Edge Profile of Metal/High-k Gate Stack Using a NH3 Ashing Process in Gate-First CMOSFETs" Electrochem. and Solid-State Lett., 9, G4, 2005.12.07. https://doi.org/10.1149/1.2131243.
53

S.A. Krishnan, M.Quevedo, R. Harris, P. D. Kirsch, R. Choi, B. H. Lee, G. Bersuker and J.C. Lee, "Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks" Jpn. J. Appl. Phys., 45(4S), 2945-2948, 2006.04.25. 10.1143/JJAP.45.2945.
52

C.Y. Kang, R. Choi , S.C. Song , C.D. Young, G. Bersuker, B. H. Lee, and J.C. Lee, "Transient Bi-Carrier Response in High-k Dielectrics and its Impact on Transient Charge Effects in High-k CMOS Device" Appl. Phys. Lett., 88(16), 162905, 2006.04.20. https://doi.org/10.1063/1.2195901.
51

H. Luan, H. N. Alshareef, H. R. Harris, H. C. Wen, K. Choi, Y. Senzaki, P. Majhi and B. H. Lee, "Evaluation of titanium silicon nitride as gate electrodes for complimentary metal-oxide semicondiuctor" Appl. Phys. Lett., 88(14), 142113, 2006.04.07. https://doi.org/10.1063/1.2188380.
50

H.N. Alshareef, H. F. Luan, K. Choi, H.C. Wen, H.R. Harris, Y. Senzaki, P. Majhi and B. H. Lee, "Metal gate Work Function Engineering Using AlNx Interfacial Layers" Appl. Phys. Lett., 88(11), 111124, 2006.03.16. https://doi.org/10.1063/1.2186517.
49

S.H.Bae, S.C.Song, K.Choi, G.Bersuker, G.A.Brown, D.L.Kwong, and B. H. Lee, "Thickness optimization of the TiN metal gate with polysilicon-capping layer on Hf-based high-k dielectric" Microelectronic Engineering, 83(3), 460-462, 2006.03. https://doi.org/10.1016/j.mee.2005.11.010.
48

Z. Zhang, S.C. Song, M. Quevedo-Lopez, K. Choi, P. Kirsch, P. Lysaght, and B. H. Lee, "Co-Optimization of Metal Gate/High-k Stack to Achieve High-Field Mobility > 90% of SiO2 Universal with EOT = ~1 nm" IEEE Elec. Dev. Lett., 27(3), 185, 2006.02.27. 10.1109/LED.2006.870245.
47

G. Bersuker, B. H. Lee and H. Huff, "Novel dielectric Materials for Future transistor Generations" Int. J. of High speed electronics and systems, 16(1), 199-222, 2006.03.. https://doi.org/10.1007/978-0-387-49965-9_5.
46

P. Majhi, HC. Wen, H.N. Alshareef, H.R. Harris, H. Luan, K.Choi, C.S. Park, S.C. Song, B. H. Lee and R. Jammy, "Developing a systematic approach to metal gates and high-k dielectrics in future-generation CMOS" MICRO, 24(4), 25-31, .
45

R. Choi, C.D. Young, G. Bersuker, Y.Zhao, B. H. Lee, "Characterization and Reliability Measurement Issues in Novel Gate Stack Devices" Thin Solid Films, 504, 223, 2006.02.28. https://doi.org/10.1016/j.tsf.2005.09.178.
44

H.N. Alshareef, K. Choi, H.C. Wen, H. F. Luan, H.R. Harris, Y. Senzaki, P. Majhi, B. H. Lee, R.Jammy, S. Aguirre-Tostado, B. E. Gnade, and R. M. Wallace, "Composition dependence of the work function of Ta1-xAlxNy Metal Gates" Appl. Phys. Lett., 88, 072108, 2006.02.16. https://doi.org/10.1063/1.2174836.
43

M. S. Rahman, H. Park, M. Chang, D. Lee, B. H. Lee and H. Hwang, "Enhanced Reliability and Performance of High-k MOSFET by Two-Step Annealing" Electrochem. Solid-State Lett., 9(4), G127, 2006.02.14. https://doi.org/10.1149/1.2168287.
42

P.Kirsch, M.A.Quevedo-Lopez, H.J. Li, Y. Senzaki, J.J. Peterson, S.C.Song, S.A.Krishnan, N. Moumen, J. Barnett, G. Bersuker, P.Y. Hung, B.H.Lee, T. Lafford, Q. Wang, D. Gay, J. G.Ekerdt, "Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility" J. Appl. Phys., 99(2), 023508, 2006.01.19. https://doi.org/10.1063/1.2161819.
41

S.C. Song, J. Sim, Z. Zhang, S. Bae, P. Kirsch, G. Bersuker, and B. H. Lee, "Morphology and Crystallization of Ultra Thin HfON (EOT≤1nm) with TiN Metal Gate: Impact on Electron Mobility" Electrochem. Solid-State Lett., 9, G77, 2006.01.09. https://doi.org/10.1149/1.2161441.
2005
40

C.S. Park, N. Moumen, J. H. Sim, J. Barnnet, B. H. Lee, and G. Bersuker, "Performance of HfO2 Gate Stacks with in-situ Grown and O3 Chemical Interfacial Oxide Layers" APPLIED PHYSICS LETTERS, 87, 253510, 2005.12.15. https://doi.org/10.1063/1.2149511.
39

M.S. Akbar, N.Moumen, J.Barnett, B. H. Lee, and J.C.Lee, "Improvement in bias instabilities of Hf-silicate by dilute hydrochloric acid(500:1) post deposition rinsing and its effect after high pressure H2 anneal" APPLIED PHYSICS LETTERS, 87, 252903, 2005.12.14. https://doi.org/10.1063/1.2149974.
38

H. Luan, H. N. Alshareef, P. S. Lysaght, H. R. Harris, H. C. Wen, K. Choi, Y. Senzaki, P. Majhi and B. H. Lee, "Evaluation of tantalum silicon alloy system as gate electrodes" APPLIED PHYSICS LETTERS, 87, 212110, 2005.11.18. https://doi.org/10.1063/1.2126132.
37

H. R. Harris, R. Choi, J.H. Sim, C. Young, P. Majhi, B. H. Lee, G. Bersuker, "Electrical Observation of Deep Traps in High-k/Metal Gate Stack Transistors" IEEE ELECTRON DEVICE LETTERS, 26 (11), 839, 2005.10.24. https://doi.org/10.1109/LED.2005.857727.
36

H. Park, M. S. Rahman, M. Chang, B. H. Lee, R. Choi, C. D. Young and H. Hwang, "Improved Interface Quality and Charge-Trapping Characteristics of MOSFETs With High-k Gate Dielectric" IEEE ELECTRON DEVICE LETTERS, 26 (10), 725, 2005.09.19. https://doi.org/10.1109/LED.2005.855422.
35

R. Choi, S. C. Song, C. D. Young, G. Bersuker, and B. H. Lee, "Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique" APPLIED PHYSICS LETTERS, 87, 122901, 2005.09.16. https://doi.org/10.1063/1.2043252.
34

H.-C. Wen, P. Lysaght, M. Campin, B. Foran, G. Lian, Rusty Harris, H. Alshareef, K. Choi, H. Luan, C. Huffman, P. Majhi, B. H. Lee and D.L. Kwong, "Thermal response of Ru electrodes in contact with SiO2 and Hf based high-K gate dielectrics" JOURNAL OF APPLIED PHYSICS, 98, 043520, 2005.08.24. https://doi.org/10.1063/1.2012510.
33

K. Choi, P. Lysaght, H. Alshareef, C. Huffman, H.-C. Wen, R. Harris, H. Luan,P.-Y. Hung, C. Sparks, M. Cruz, K. Matthews, P. Majhi, B. H. Lee, "Growth mechanism of TiN film on dielectric films and the effects on the work function" Thin Solid Films, 486, 141, 2005.02.11. https://doi.org/10.1016/j.tsf.2004.11.239.
32

P. S. Lysaght, B. Foran, G. Bersuker, J. J. Peterson, C. D. Young, P. Majhi, B. H. Lee, and H. R. Huff, "Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes" APPLIED PHYSICS LETTERS, 87, 082903, 2005.08.15. https://doi.org/10.1063/1.2011827.
31

Z. Zhang, S.C. Song, C.Huffman, M. M. Hussain, J. Barnett, N.Moumen, H.N. Alshareef, P.Majhi, J.H. Sim, S.H. Bae, and B. H. Lee, "Integration of Dual Metal Gate CMOS on High-k Dielectrics Utilizing a Metal Wet Etch Process" Electrochemical and Solid-State Letters, 8 (10), G271, 2005.08.12. https://doi.org/10.1149/1.2030447.
30

S.C.Song, B. H. Lee, Z.Zhang, S.H.Bae, K.Choi, P.Zeitzoff, "“Impact of Deposition Method of Metal Gate on Characteristics of Gate-First MOSFET with Hf-Silicate" Electrochemical and Solid-State Letters, 8 (10), G261, 2005.08.04. https://doi.org/10.1149/1.2007407.

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