Journals 11 페이지 | 포항공대 EESL

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Total 310건 11 페이지

2004
10

S. Zafar, B. H. Lee, and J. Stathis, "Evaluation of NBTI in HfO2 Gate Dielectric Stacks With Tungsten Gates" IEEE ELECTRON DEVICE LETTERS, 25 (3), 153, 2004.03.03. https://doi.org/10.1109/LED.2004.824244.
2003
9

K. Rim, R. Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, S. Christansen, J. Chu, K. Jenkins, T. Kanarsky, S. Koester, B. H. Lee, K. Lee, V. Mazzeo, A. Mocuta, D. Mocuta, P. M. Mooney, P. Oldiges, J. Ott, P. Ronsheim, R. Roy, A. Steegen, M. Yang, H. Zhu, "Strained Si CMOS (SS CMOS) technology: opportunities and challenges" Solid-State Electronics, 47 (7), 1133, 2003.07. https://doi.org/10.1016/S0038-1101(03)00041-8.
2002
8

Y.J. Cho, N.V.Nguyen, C.A.Richter, J.R.Ehrstein, B. H. Lee, and Jack C.Lee, "Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties" Applied Physics Letters, 80, 1249, 2002.02.14. https://doi.org/10.1063/1.1448384.
2000
7

W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, and J.C. Lee, "Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application" Applied Physics Letters, 77, 3269, 2000.11.13. https://doi.org/10.1063/1.1326482.
6

W. Qi, R. Nieh, E. Dhamarajan, B. H. Lee, Y. Jeon, L. Kang, K. Onishi, and J. C. Lee, "Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application" Applied Physics Letters, 77 (11), 1704, 2000.09.05. https://doi.org/10.1063/1.1308535.
5

L. Kang, B. H. Lee, W. Qi, R. Nieh, Y. Jeon, K. Onishi, S. Gopalan and J. C. Lee, "Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric" IEEE Electron Device Letters, 21 (4), 181, 2000.04. https://doi.org/10.1109/55.830975.
4

B. H. Lee, L. Kang, R. Nieh, W. Qi, and J. C.Lee, "Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing" Applied Physics Letters, 76, 1926, 2000.03.27 (First journal paper on thin HfO2 gate dielectric, cited more than 750 times). https://doi.org/10.1063/1.126214.
1999
3

B. H. Lee, Y. Jeon, K. Zawadzki, W. Qi and J. C. Lee, "Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon" Applied Physics Letters, 74, 3143, 1999.05.24. https://doi.org/10.1063/1.124089.
1997
2

G. Cha, B. H. Lee, K. W. Lee, G. J. Bae, W. D. Kim, J. H. Lee, I. K. Kim, K. C. Park, S. I. Lee and Y. B. Koh, "Design Considerations for Patterned Wafer Bonding" Japanese Journal of Applied Physics, 36, 1912, 1997.05.
1

J. M. Leng, J. J. Sidorowich, Y. D. Yoon, J. Opsal, B. H. Lee, "Simultaneous measurement of six layers in a silicon on insulator film stack using spectrophotometry and beam profile reflectometry" Journal of Applied Physics, 81 (8), 3570, 1997.04.15. https://doi.org/10.1063/1.364994.

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