Journals 4 페이지 | 포항공대 EESL

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Total 310건 4 페이지

2017
220

H.J. Hwang, K.E. Chang, W.B. Yoo, C.H. Shim, S.K. Lee, J.H. Yang, S.Y. Kim, Y.S. Lee, C. Cho, B.H. Lee, "A graphene barristor using nitrogen profile controlled ZnO Schottky contacts" Nanoscale, 9 (7), 2442-2448, 2017.01.23. http://doi.org/10.1039/C6NR08829E.
2016
219

Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee*, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors" Scientific Reports, 6, p.39393, 2016.12.19. https://doi.org/10.1038/srep39353.
218

Y. Kumaresan, Y.S. Pak, N.S. Lim, Y.H. Kim, M.J. Park, S.M. Yoon, H.M. Youn, H. Lee, B.H. Lee, G.Y. Jung, "Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer" Scientific Reports, 6, 37764, 2016.11.23. https://doi.org/10.1038/srep37764.
217

N. Fujisawa, T.F. Zhang, B.H.Lee, K.H.Kim, "A robust method for extracting the mechanical properties of thin films with rough surfaces by nanoindentation" J. of Materials Research, 31(23), p.3777-3785, 2016.12.14. https://doi.org/10.1557/jmr.2016.428.
216

A.K. Khan, B.,H.Lee*, "Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device" AIP Advances, 6, p.096022, 2016.09.23. https://doi.org/10.1063/1.4963776.
215

Y.H. Kim, A.R. Kim, J.H. Yang, K.E. Chang, J. Kwon, S. Y. Choi, K. H. Lee, B.H. Lee, M.G. Hahm, and B. Cho, "Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering" Nano Letters, 16(9), p.5928-5933, 2016.08.23. https://doi.org/10.1021/acs.nanolett.6b02893.
214

B.J.Co, A.R.Kim, D.J.Kim, H.S.Chung,S.Y.Choi, J.D. Kwon, S.W.Park, Y.H.Kim, B.H.Lee, K.H.Lee, D.H.Kim, J.W.Nam, M.G.Hahm, "Two-Dimensional Atomic-Layered Alloy Junctions for High-Performance Wearable Chemical Sensor" ACS Applied Materials and Interfaces, 8, p.19635-19632, 2016.07.07. https://doi.org/10.1021/acsami.6b05943.
213

Y.H.Kim, W.J.Park, J.H. Yang, C Cho, S.K.Lee, B.H.Lee*, "Reduction of Low Frequency Noise at Multilayer MoS2 FETs using a Fermi Level De-pinning Layer" Physica Status Solidi-RRL, 10(8), p.634-638, 2016.06.29. https://doi.org/10.1002/pssr.201600136.
212

J.W. Yoon, Y.K. Jeong, H.J. Kim, S.G. Yoo, Y.H. Kim , Y.K. Hwang, Y.J. Hyun, W.K. Hong, B.H.Lee, S.H. Choa, H.C. Ko, "Robust stretchable indium gallium Zinc oxide-based electronic textiles formed by cilia-assisted transfer printing" Nature communications, 7, p.11477, 2016.06.01. https://doi.org/10.1038/ncomms11477.
211

Y.G.Lee, S.K.Lim, C.G.Kang, Y.J.Kim, D.H.Choi, H.J.Chung, R.Choi, B.H.Lee*, "Origin of the channel width dependent field effect mobility of graphene field effect transistors" Microelectronic Engineering, 163, p.55-59, 2016.06.06. https://doi.org/10.1016/j.mee.2016.06.004.
210

Y.H.Kim, S.C.Kang, S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*, "Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress" IEEE Electron Device Letters, 37(4), p.366-368, 2016.03.01. https://doi.org/10.1109/LED.2016.2533568.
209

S.K.Lee, Y.J.Kim and B.H.Lee*, "Study on future electronic device using graphene" Vacuum Magazine, 3(1), p.22-31, 2016.03.30. https://doi.org/10.5757/vacmac.3.1.22.
208

H.T.Pham, J.H.Yang, D.S. Lee, B.H.Lee, H.D.Jeong, "Ferroelectric/Dielectric Double Gate Insulator Spin-Coated by Using Barium Titanate Nanocrystals for Indium Oxide Nanocrystal–Based Thin-Film Transistor" ACS Applied Materials and Interfaces, 8(11), p. 7248-7256, 2016.03.10. https://doi.org/10.1021/acsami.6b00109.
207

A.R.Kim, Y.H.Kim, J.W.Nam, H.S. Chung, D.J.Kim, J.D.Kwon, S.W.Park, J.C.Park, S.Y.Choi, B.H.Lee, J.H.Park,K.H.Lee, D.H.Kim, S.M.Choi,A. Pulickel, M.G.Hahm, B.J.Cho, "Alloyed 2D metal-semiconductor atomic layer junctions" Nano Letters, 16(3), p.1890–1895, 2016.02.10. https://doi.org/10.1021/acs.nanolett.5b05036.
206

J.H.Yang,T.H. Ryu, Y. Lansac, Y.H. Jang, B.H.Lee*, "Shear stress induced enhancement of Piezoelectric properties of PVDF-TrFE thin film" Organic Electronics, 28, p.67-72, 2015.10.24. https://doi.org/10.1016/j.orgel.2015.10.018.
2015
205

J.S.Jang, M.W.Son, S.K.Chung, K.H.Kim, C.Cho, B.H.Lee, M.H.Ham, "Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure" Scientific Reports, 5 (1), 17955, 2015.12.10. https://doi.org/10.1038/srep17955.
204

W.J.Park, Y.H.Kim, U.J. Jung, J.H.Yang, C. Cho, Y.J.Kim, S.M.N Hasan, H.G.Kim, H.B.R.Lee, B.H.Lee, "Complementary Unipolar WS <sub>2</sub> Field-Effect Transistors Using Fermi-Level Depinning Layers" Advanced Electronic Materials, 2 (2), 1500278, 2015.12.15. https://doi.org/10.1002/aelm.201500278.
203

B.J. Cho, J.W. Yoon, S.K. Lim, A.R. Kim, S.Y.Choi, D.H. Kim, K.H. Lee, B.H. Lee, H.C. Ko, M.G. Hahm, "Metal Decoration Effects on the Gas-Sensing Properties of 2D Hybrid-Structures on Flexible Substrates" Sensors, 15 (10), 24903-24913, 2015.09.25. https://doi.org/10.3390/s151024903.
202

B.H.Lee*, H.J.Jwang, K.E.Chang, Y.J.Kim, S.Y.Kim, Y.B.Yoo, "그래핀 소자기술" The Magazine of the IEIE, 2015.07. (invited).
201

B.J.Cho, J.W.Yoon, S.K.Lim, A.R.Kim, D.H.Kim, S.G.Park, J.D.Kwon, Y.J.Lee. K.H.Lee, B.H.Lee, H.C.Ko, M.G.Hahm, "Chemical Sensing of 2D Graphene/MoS <sub>2</sub> Heterostructure device" ACS Applied Materials & Interfaces, 7 (30), 16775-16780, 2015.08.05. https://doi.org/10.1021/acsami.5b04541.
200

S. H. Lee, W. Park, B. H. Lee and W. B. Kim, "Patterned catalyst arrays of Pd/SnO <sub>2</sub> core–shell nanowires for electrooxidations of biomass-derived alcohols" Journal of Materials Chemistry A, 3 (25), 13492-13499, 2015.05.14. https://doi.org/10.1039/C5TA01476J.
199

U.J. Jung, J.J. Kim, Y.H. Kim, Y.G. Lee, S.C Song, J. Blatchford, B. Kirkpatrick, H.Niimi, B.H.Lee, "Dipole-induced gate leakage reduction in scaled MOSFETs with a highly doped polysilicon/nitrided oxide gate stack" Microelectronic Engineering, 142, 1-6, 2015.06.14. https://doi.org/10.1016/j.mee.2015.06.005.
198

C.Cho, S.K.Lee, J.Noh, W.Park S.C.Lee, Y.G.Lee, H.J.Hwang, M.Ham, B.H.Lee, "Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern" Applied Physics Letters, 106 (21), 213107, 2015.05.25. https://doi.org/10.1063/1.4921797.
197

S.C.Lee, S.K.Lee, C.G.Kang, C.Cho, Y.G.Lee, U.J.Jung, and B.H.Lee, "Graphene transfer in vacuum yielding a high quality graphene" Carbon, 93, 286-294, 2015.05.21. https://doi.org/10.1016/j.carbon.2015.05.038.
196

S.Park, M.Chu, J.I.Kim, J.Noh, M.Jeon, B.H.Lee, B.Lee, H.Hwang and B.G.Lee, "Electronic system with memristive synapses for pattern recognition" Scientific Reports, 5 (1), 10123, 2015.05.05. https://doi.org/10.1038/srep10123.
195

J.H.Yang,H.J. Hwang, S.C. Kang, and B.H. Lee, "Sensitivity improvement of graphene/Al2O3/PVDF–TrFE stacked touch device through Al seed assisted dielectric scaling" Microelectronic Engineering, 147, 79-84, 2015.04.13. https://doi.org/10.1016/j.mee.2015.04.039.
194

C.K.Park, H.J.Kim, K.Y.Ko, K.K.Kim, B.H.Lee, J.H.Ahn, "The variation of the enhanced PL efficiency of Y 2 O 3 :Eu 3+ phosphor films with the height to the ZrO 2 nanoparticle-assisted 2D PCL by reverse nano-imprint lithography" Microelectronic Engineering, 136, 48-50, 2015.03.25. https://doi.org/10.1016/j.mee.2015.03.035.
193

Y.H. Kim, Y.G. Lee, U. Jung, J.J. Kim, M.H. Choe, K.T. Lee, S.W. Pae, J.W. Park, B.H.Lee, "Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry" IEEE Transactions on Electron Devices, 62 (4), 1092-1097, 2015.03.20. https://doi.org/10.1109/TED.2015.2404920.
192

Y.J.Kim, Y.G.Lee, U.Jung, S.Lee, S.K.Lee, and B.H.Lee, "A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors" Nanoscale, 7 (9), 4013-4019, 2015.02.12. https://doi.org/10.1039/C4NR06397J.
191

U.Jung, Y.J.Kim, Y.H.Kim, Y.G.Lee, and B.H.Lee, "Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors" IEEE Electron Device Letters, 36 (4), 408-410, 2015.02.10. https://doi.org/10.1109/LED.2015.2402287.

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