Journals 7 페이지 | 포항공대 EESL

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Total 310건 7 페이지

2011
130

B.H.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, and H.Hwang, "Nano-Electromechanical Switch-CMOS Hybrid Technology and Its Applications" J. Nanoscience and Nanotechnology, 11, 1, p.256-261, 2011.01.01. https://doi.org/10.1166/jnn.2011.3154.
2010
129

W.H. Choi, C.-Y. Kang, J.-W. Oh, B.H. Lee, P. Majhi, H.M. Kwon, R. Jammy, G.W. Lee and H.D. Lee, "Trade-off Between Hot Carrier and Negative Bias Temperature Degradations in High Performance Si1-xGe1-x pMOSFETs with High-k/Metal Gate Stacks" IEEE Electron Device Lett., 31(11), 1211-1213, 2010.10.07. 10.1109/LED.2010.2071851.
128

H.B. Park, C.S.Park, C.Y. Kang, S.-C. Song, B.H. Lee, T.W. Kim, T.-Y. Jang, D.-H. Kim, J. K. Jeong, and Ri. Choi, "Performance and reliability analysis of p-type metal-oxide-semiconductor field effect transistors with various combinations of Ru and Al gate metal" J. Vac. Sci. Technol., 28(6), 1267, 2010.11.11. https://doi.org/10.1116/1.3514103.
127

J.W. Lee, B.H. Lee, H.C. Shin, J.H. Lee, "Comparison of Low Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-k nFETs" IEEE Elect. Dev. Lett., 31(10), 1086-1088, 2010.08.12. 10.1109/LED.2010.2058839.
126

C.D. Young, D. Heh, R. Choi, B.H. Lee, G. Bersuker, "The Pulsed Id-Vg methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics" J. Semi. Tech. Sci., 10(2), 79-99, 2010.06.30. https://doi.org/10.5573/JSTS.2010.10.2.079.
125

J.-W. Lee, B.H. Lee, H. Shin, and J.-H. Lee, "Investigation of Random Telegraph Noise in Gate Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-k MOSFETs" IEEE Trans. on Elect. Dev., 57(4), 913-918, 2010.02.25. 10.1109/TED.2010.2041871.
124

M.H. Choe, G.H. Jo, J.S. Maeng, W.-K. Hong, M.S. Jo, G.U. Wang, W.J. Park, B.H. Lee, H. Hwang, and T. Lee, "Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness" J. Appl. Phys, 107(3), 034504, 2010.02.05. https://doi.org/10.1063/1.3298910.
2009
123

H. Park, M. Chang, M. Jo, R. Choi, B.H. Lee, H. Hwang, "Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition" Jpn. J. Appl. Phys., 48 (11), 116506, 2009.11.20. http://doi.org/10.1143/JJAP.48.116506.
122

H.B. Park, C.S. Park, C.Y. Kang, S.C. Song, B.H. Lee, T.Y. Jang, T.W. Kim, J.K. Jeong, R. Choi, "Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric" Applied Physics Letters, 95 (19), 192113, 2009.11.09. http://doi.org/10.1063/1.3264086.
121

R. Choi, T.W. Kim, H. Park, B.H. Lee, "Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric" Japanese Journal of Applied Physics, 48 (9), 091404, 2009.09.24. http://doi.org/10.1143/JJAP.48.091404.
120

C.Y. Kang, R. Choi, B.H. Lee, R. Jammy, "Reliability Characteristics of La-doped High-k/Metal Gate nMOSFETs" Journal of Semiconductor Technology and Science, 9 (3), 166-173, 2009.12. http://doi.org/10.5573/JSTS.2009.9.3.166.
119

K.T. Lee, C.Y. Kang, M.S. Park, B.H. Lee, H.K. Park, H. Hwang, H.H. Tseng, R. Jammy, Y.H. Jeong, "A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress" IEEE Electron Device Letters, 30 (7), 760-762, 2009.05.27. http://doi.org/10.1109/LED.2009.2021007.
118

C.Y. Kang, P. Kirsch, B.H. Lee, H.H. Tseng, R. Jammy, "Reliability of La-Doped Hf-Based Dielectrics nMOSFETs" IEEE Transactions on Device and Materials Reliability, 9 (2), 171-179, 2009.01.05. http://doi.org/10.1109/TDMR.2009.2020741.
117

C.D. Young, G. Bersuker, R. Choi, D. Heh, B.H. Lee, Y. Zhao, "Pulsed Id-Vg Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling" IEEE Transactions on Electron Devices, 56 (6), 1322-1329, 2009.05.20. http://doi.org/10.1109/TED.2009.2019384.
116

H.S. Choi, S.H. Hong, R.H. Baek, K.T. Lee, C.Y. Kang, R. Jammy, B.H. Lee, Y.H. Jeong, "Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric" IEEE Electron Device Letters, 30 (5), 523-525, 2009.04.07. http://doi.org/10.1109/LED.2009.2015586.
115

B.H. Lee, C. Kang, R. Choi, H-D. Lee, G. Bersuker, "Stress field analysis to understand the breakdown characteristics of stacked high-k dielectrics" Appl. Phys. Lett., 94 (16), 162904, 2009.04.23. http://doi.org/10.1063/1.3122924.
114

W.H. Choi, I.S. Han, H.M. Kwon, T.G. Goo, M.K. Na, O.S. Yoo, G.W. Lee, C.Y. Kang, R. Choi, S.C. Song, B.H. Lee, R. Jammy, Y.H. Jeong, H.-D. Lee, "Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON" Microelectronic Engineering, 86 (3), 268-271, 2009.03. http://doi.org/10.1016/j.mee.2008.04.008.
113

O.S. Yoo, J. Oh, K.S. Min, C.Y. Kang, B.H. Lee, K.T. Lee, M.K. Na, H.-M. Kwon, P. Majhi, H-H Tseng, R. Jammy, J.S. Wang, H.-D. Lee, "Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs" Microelectronic Engineering, 86 (3), 259-262, 2009.03. http://doi.org/10.1016/j.mee.2008.04.024.
112

C.D. Young, G. Bersuker, J. Tun, R.Choi, D. Heh, B.H. Lee, "“Smart” TDDB algorithm for investigating degradation in high-κ gate dielectric stacks under constant voltage stress" Microelectronic Engineering, 86 (3), 287-290, 2009.03. http://doi.org/10.1016/j.mee.2008.09.024.
111

I.S. Han, O.S. Yoo, W.H. Choi, H.M. Kwong, M.K. Na, C.Y. Kang, G. Bersuker, B.H. Lee, Y.H. Jeong, H.D. Lee, R. Jammy, "Time-Dependent Dielectric Breakdown of La2O3-Doped High-k/Metal Gate Stacked NMOSFETs" IEEE Electron Device Letters, 30 (3), 298-301, 2009.03. http://doi.org/10.1109/LED.2008.2012272.
110

H.B. Park, B.S. Ju, C.Y. Kang, C. Park, C.S. Park, B.H. Lee, T.W. Kim, B.S. Kim, R. Choi, "Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment" Applied Physics Letters, 94 (4), 042911, 2009.01.30. https://doi.org/10.1063/1.3078277.
109

C.D. Young, J.W. Yang, K. Matthews, S. Suthram, M.M. Hussain, G. Bersuker, C. Smith, R. Harris, R. Choi, B.H. Lee, H.H. Tseng, "Hot carrier degradation in HfSiON∕TiN fin shaped field effect transistor with different substrate orientations" J. Vac. Sci. Technol. B, 27 (1), 468, 2009.02.09. http://doi.org/10.1116/1.3072919.
108

J.-W. Yang, H.R. Harris, G. Bersuker, C.Y. Kang, J. Oh, B.H. Lee, H.-H. Tseng, R. Jammy, "New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs" IEEE Electron Device Letters, 30 (1), 54-56, 2009.01. http://doi.org/10.1109/LED.2008.2007661.
2008
107

H.J. Na, J. Lee, D. Heh , P. Sivasubramani , P. Kirsch, J. Oh, P.Majhi, B.H.Lee, S. Rivillon, Y. Chabal, "Effective surface passivation methodologies for high performance germanium Metal Oxide Semiconductor Field Effect Transistors" Appl. Phys. Lett., 93, 192115, 2008.11.14. http://doi.org/10.1063/1.3028025.
106

O.S. Yoo, J. Oh, C.Y. Kang, B.H. Lee, I.S. Han, W.-H. Choi, H.-M. Kwon, M.-K. Na, P. Majhi, H.-H.Tseng, R. Jammy, J.S. Wang, H.-D. Lee, "Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate" Materials Science and Engineering B, 154-155, p.102-105, 2008.12.05. http://doi.org/10.1016/j.mseb.2008.06.031.
105

J. G. Wang, J. Kim, C.Y. Kang, B.H. Lee, R. Jammy, R. Choi, and M. J. Kim, "Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack" Appl. Phys. Lett., 93, 161913, 2008.10.24. http://doi.org/10.1063/1.3009572.
104

K. Choi, H.C.Wen, G. Bersuker, H. Harris, B.H.Lee, "Mechanism of flatband voltage roll-off studied with Al2O3 film deposited on terraced oxide" Appl. Phys. Lett., 93, 133056, 2008.10.01. http://doi.org/10.1063/1.2993335.
103

Y. Wang, K.P. Cheung, R. Choi, B.H.Lee, "An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices-Part I" IEEE Transactions on Electron Devices, 55 (9), p.2429-2436, 2008.08.08. http://doi.org/10.1109/TED.2008.928489.
102

Y. Wang, K.P. Cheung, R. Choi, B.H.Lee, "An Accurate Capacitance-Voltage Measurement Method for Highly leaky Devices-Part II" IEEE Transactions on Electron Devices, 55 (9), p.2437-2442, 2008.08.19. http://doi.org/10.1109/TED.2008.927659.
101

J.M. Lee, H.K. Park, M. Hasan, M. Jo, M. Chang, B. H. Lee, C.S. Park, C.Y. Kang and H. Hwang, "Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient" Appl. Phys. Lett., 92, 263505, 2008.07.03. http://doi.org/10.1063/1.2953192.

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