Journals 9 페이지 | 포항공대 EESL

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Total 329건 9 페이지

2008
89

B.H.Lee, S.C.Song, R.Choi and P.Kirsch, "Metal Electrode/High-k Dielectric Gate Stack Technology for Power Management" IEEE Transactions on Electron Devices, 55 (1), p.8-20, 2007.12.26 (invited). http://doi.org/10.1109/TED.2007.911044.
2007
88

B. H. Lee, C.Y.Kang, S. Krishnan, P.Kirsch, D. Heh, C. Young, J.W. Yang, G. Bersuker, R.Choi, H.D.Lee, "Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate" Appl. Phys. Lett., 91, 243514, 2007.12.14. http://doi.org/10.1063/1.2825288.
87

P. Lysaght, J.C. Woicik , M. Sahiner, B. H. Lee, R. Jammy, "Characterizing crystalline polymorph transitions in HfO2 by extended x-ray absorption fine-structure spectroscopy" Appl. Phys. Lett., 91, 122910, 2007.09.19. http://doi.org/10.1063/1.2789180.
86

S. C. Song, M. M.Hussain, C. Burham, C. S. Park, B. H. Lee, and R. Jammy, "Strain-enhanced scaling of HK+MG CMOSFETs" Solid State Technology, 50 (9), p.46-49, 2007.09.
85

H. Park, R. Choi, B.H. Lee, and H. Hwang, "Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-k Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing" Jpn. J. Appl. Phys., 46 (33), p.786-788, 2007.08.17. http://doi.org/10.1143/JJAP.46.L786.
84

T. Boscke, S. Govindarajan , P.D. Kirsch , P.Y. Hung , C. Krug , B. H. Lee, J. Heitmann , U. Schroeder , G. Pant , B.E. Gnade , W.H. Krautschneider, "Stabilization of Higher-k Tetragonal HfO2 by SiO2 Admixture Enabling Thermally Stable Metal Insulator Metal Capacitors" Appl. Phys. Lett., 91, 072902, 2007.08.14. http://doi.org/10.1063/1.2771376.
83

S. Govindarajan, T. S. Böscke, P. Sivasubramani, U. Schröder, S. Ramanathan, P.D. Kirsch,B. E. Gnade, B. H. Lee, H.-H. Tseng, R. Jammy, "Higher Permittivity Rare Earth Doped Hafnium Oxide for sub-45nm Metal-Insulator-Semiconductor Device Applications" Appl. Phys. Lett., 91, 062906, 2007.08.07. http://doi.org/10.1063/1.2768002.
82

H.C. Floresca, J. Wang, M. Kim, J. Kim, C.Y. Kang, R. Choi, S.C. Song, H.H. Tseng, B. H. Lee, R. Jammy, "Determination of Strain in the Silicon Channel Induced by a Metal Electrode" Microscopy and Microanalysis, 13 (Suppl. 2), p.838-839, 2007.08.05. http://doi.org/10.1017/S143192760707465X.
81

C.Y. Kang, R. Choi, M. Hussain, J. Wang, Y.J. Suh, H. Floresca, M. Kim, J. Kim, B. H. Lee, R. Jammy, "Effects of Metal Gate-Induced Strain on the Performance of Metal-Oxide-Semiconductor Field Effect Transistors with Titanium Nitride Gate Electrode and Hafnium Oxide Dielectric" Appl. Phys. Lett., 91, 033511, 2007.07.19. http://doi.org/10.1063/1.2766667.
80

Y. Wang, K. P. Cheung, R. Choi, G. A. Brown, B. H. Lee, "Error and correction in capacitance-voltage measurement due to the presence of source and drain" IEEE Electron Device Letters, 28 (7), p. 640-642, 2007.06.25. http://doi.org/10.1109/LED.2007.899602.
79

C.D.Young, D. Heh, A. Neugroschel, R.Choi, B.H.Lee, G.Bersuker, "Electrical characterization and analysis technique for high-k era" Microelectronics Reliability, 47, p.479-488, 2007.04.09. http://doi.org/10.1016/j.microrel.2007.01.053.
78

C.Y. Kang, R. Choi, S.C. Song and B. H. Lee, "Effects of Gate Edge Profile On Off-state Leakage Suppression in Metal Gate/High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors" Appl. Phys. Lett., 90, 183501, 2007.04.30. http://doi.org/10.1063/1.2734381.
77

S. Joshi, C. Krug, D. heh, H.J. Na, H.R. Harris, J.W, Oh, P.D. Kirsch, P. Majhi, B. H. Lee, H.H. Tseng, R. Jammy, J.C. Lee, S.K. Banerjee, "Improved Ge Surface Passivation With Ultrathin SiOx Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack" IEEE Electron Device Letters, 28 (4), p.308-311, 2007.04.02. http://doi.org/10.1109/LED.2007.893274.
76

Y. Wang, K. P. Cheung, R. Choi, G. A. Brown, B. H. Lee, "Accurate series resistance extraction from capacitor using Time-Domain-Reflectometry" IEEE Electron Device Letters, 28 (4), p.279-281, 2007.03.26. http://doi.org/10.1109/LED.2007.891751.
75

G.Bersuker, J.H.Sim, C.S.Park, C.D.Young, S.V.Nadkarni, R.Choi and B. H. Lee, "Mechanism of electron trapping and characteristics of traps in HfO2 gate stacks" IEEE Transactions on Device and Materials Reliability, 7 (1), p.138-145, 2007.07.16. http://doi.org/10.1109/TDMR.2007.897532.
74

Y. Wang, K. P. Cheung, R. Choi, G. A. Brown, B. H. Lee, "Time Domain Reflectometry for capacitance-voltage measurement with very high leakage current" IEEE Electron Device Letters, 28 (1), p.51-53, 2006.12.26. http://doi.org/10.1109/LED.2006.887628.
73

M. Chang, M. Jo, H. Park, H. Hwang, B. H. Lee, and R.Choi, "Effect of F2 Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate Dielectric" IEEE Elec. Dev. Lett., 28 (1), p.21-23, 2006.12.26. https://doi.org/10.1109/LED.2006.887941.
72

O. Sharia, A.Demkov, G.Bersuker, B. H. Lee, "Theoretical study of the insulator/insulator interface: Band alignment at the SiO2/HfO2 junction" Phys. Rev. B, 75, 035306, 2007.01.05. https://doi.org/10.1103/PhysRevB.75.035306.
2006
71

P.Kirsch, M.A.Quevedo-Lopez, S.A.Krishnan, G.Pant, M.J.Kim, R.M.Wallace, B.E.Gande, and B. H. Lee, "Mobility and Charge Trapping Comparison for Crystalline and Amorphous HfON and HfSiON Gate Dielectrics" Appl. Phys. Lett., 89(24), 242909, 2006.12.13. https://doi.org/10.1063/1.2392992.
70

H.N. Alshareef, H.C.Wen, H.F. Luan, K. Choi, H.R. Harris, Y. Senzaki, P. Majhi, B. H. Lee, B.Foran, G. Lian, "Temperature dependence of the work function of ruthenium-based gate electrodes" Thin Solid Films, 515(4), 1294-1298, 2006.12. https://doi.org/10.1016/j.tsf.2006.03.026.
69

H.N. Alshareef, M. Quevedo-Lopez, H.C.Wen, H.R. Harris, P.Kirsch, P. Majhi, B. H. Lee, R. Jammy, D.J.Lichtenwalner, J.S.Jur, A.I.Kingon, "Work function engineering using lanthanide oxide interfacial layers" Appl. Phys. Lett., 89(23), 232103, 2006.12.04. https://doi.org/10.1063/1.2396918.
68

H.-C. Wen, H. R. Harris, C.D. Young, H.Luan, H.N. Alshareef, K. Choi, D.-L. Kwong, P. Majhi, G. Bersuker, and B. H. Lee, "On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-k Dielectrics" IEEE Elec. Dev. Lett., 27(12), 984-987, 2006.11.30. 10.1109/LED.2006.886711.
67

G. Bersuker, C. S. Park, J. Barnett, P.S. Lysaght, P. D. Kirsch, C.D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan and J. T. Ryan, "The effect of interfacial layer properties on the performance of Hf-based gate stack devices" J. Appl. Phys., 100(9), 094108, 2006.11.10. https://doi.org/10.1063/1.2362905.
66

K.S.Chang, M. Green , J. Suehle , E. Vogel , H. Xiong , J. Hattrick-Simpers , I. Takeuchi , O. Famodu , K. Ohmori, P. Ahmet , T. Chikyow , P. Majhi , B. H. Lee and M. Gardner, "Combinatorial Study of Ni-Ti-Pt Ternary Metal Gate Electrodes on HfO2 for the Advanced Gate Stack" Appl. Phys. Lett., 89(14), 142108, 2006.10.04. https://doi.org/10.1063/1.2357011.
65

D.Heh, R. Choi, C.D. Young, B. H. Lee and G.Bersuker, "A novel bias temperature instability characterization methodology for high-k MOSFETs" IEEE ESSDERC, 287-290, 2007.02.12. 10.1109/ESSDER.2006.307719.
64

G. Thareja, S. Rhee, H.-C. Wen, R. Harris, P. Majhi, B. H. Lee and J.C. Lee, "NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics" IEEE Elec. Dev. Lett., 27(10), 802, 2006.09.25. 10.1109/LED.2006.882521.
63

J.L.Gavartin, D.Munz Ramo, A.L.Shluger, G.Bersuker, B. H. Lee, "Negative oxygen vacancies in HfO2 as charge traps in high-k stacks" Appl. Phys. Lett., 89(8), 082908, 2006.08.24. https://doi.org/10.1063/1.2236466.
62

S. C. Song, M. M. Hussain, J. Barnett, B. S. Ju, and B. H. Lee, "Integrating dual work function metal gates in CMOS" Solid State Technology, 49(8), 47-50, 2006.08.
61

B. H. Lee, P. Kirsch, H. Alshareef, P. Majhi, R. Choi, S. Song, H. H. Tseng and R. Jammy, "Review of alternative gate stack technology research during the last decade" Ceramist, 9(4), 58-71, 2006.08.31.
60

H.K. Park, R. Choi, B. H. Lee, S.C. Song, M. Chang, C.D. Young , G. Bersuker, J.C. Lee and H. Hwang, "Decoupling of cold carrier effects in hot carrier reliability assessment of HfO2 gated nMOSFETs" IEEE Elec. Dev. Lett., 27(8), 662, 2006.07.24. 10.1109/LED.2006.878041.

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