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Total 4건 1 페이지

2004
4

G. Bersuker, J. Barnett, N. Moumen, S. Stemmer, M. Agustin, B. Foran, C. D. Young, P. Lysaght, B. H. Lee, Peter M. Zeitzoff, and H. R. Huff, "Interfacial Layer-Induced Mobility Degradation in High-k Transistors" Japanese Journal of Applied Physics, 43 (11S), 7899, 2004.11.15. https://doi.org/10.1143/JJAP.43.7899.
3

G.Bersuker, J.H.Sim, C.D.Young, R.Choi, P.M.Zeitzoff, G.A.Brown, B. H. Lee, R.W.Murto, "Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics" Microelectronics reliability, 44, 1509-1512, 2004.09.17. https://doi.org/10.1016/j.microrel.2004.07.048.
2

J.J. Peterson, C. D. Young, J. Barnett, S. Gopalan, J. Gutt, C.H. Lee, H.J. Li, T.HH. Hou, Y . Kim, C. Lim, N. Chaudhary, N. Moumen, B. H. Lee, G. Bersuker, G. Brown, P. Zeitzoff, M. Gardner, R. Murto, and H.Huff, "Subnanometer Scaling of HfO2/Metal Electrode Gate Stacks" Electrochemical and Solid-State Letters, 7, G164, 2004.06.14. https://doi.org/10.1149/1.1760712.
1

S. Zafar, B. H. Lee, and J. Stathis, "Evaluation of NBTI in HfO2 Gate Dielectric Stacks With Tungsten Gates" IEEE ELECTRON DEVICE LETTERS, 25 (3), 153, 2004.03.03. https://doi.org/10.1109/LED.2004.824244.

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