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Total 17건
1 페이지
게시판 검색
2007
17
B. H. Lee, C.Y.Kang, S. Krishnan, P.Kirsch, D. Heh, C. Young, J.W. Yang, G. Bersuker, R.Choi, H.D.Lee,
"Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate"
Appl. Phys. Lett.
,
91,
243514,
2007.12.14.
http://doi.org/10.1063/1.2825288.
16
P. Lysaght, J.C. Woicik , M. Sahiner, B. H. Lee, R. Jammy,
"Characterizing crystalline polymorph transitions in HfO2 by extended x-ray absorption fine-structure spectroscopy"
Appl. Phys. Lett.
,
91,
122910,
2007.09.19.
http://doi.org/10.1063/1.2789180.
15
S. C. Song, M. M.Hussain, C. Burham, C. S. Park, B. H. Lee, and R. Jammy,
"Strain-enhanced scaling of HK+MG CMOSFETs"
Solid State Technology
,
50 (9),
p.46-49,
2007.09.
14
H. Park, R. Choi, B.H. Lee, and H. Hwang,
"Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-k Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing"
Jpn. J. Appl. Phys.
,
46 (33),
p.786-788,
2007.08.17.
http://doi.org/10.1143/JJAP.46.L786.
13
T. Boscke, S. Govindarajan , P.D. Kirsch , P.Y. Hung , C. Krug , B. H. Lee, J. Heitmann , U. Schroeder , G. Pant , B.E. Gnade , W.H. Krautschneider,
"Stabilization of Higher-k Tetragonal HfO2 by SiO2 Admixture Enabling Thermally Stable Metal Insulator Metal Capacitors"
Appl. Phys. Lett.
,
91,
072902,
2007.08.14.
http://doi.org/10.1063/1.2771376.
12
S. Govindarajan, T. S. Böscke, P. Sivasubramani, U. Schröder, S. Ramanathan, P.D. Kirsch,B. E. Gnade, B. H. Lee, H.-H. Tseng, R. Jammy,
"Higher Permittivity Rare Earth Doped Hafnium Oxide for sub-45nm Metal-Insulator-Semiconductor Device Applications"
Appl. Phys. Lett.
,
91,
062906,
2007.08.07.
http://doi.org/10.1063/1.2768002.
11
H.C. Floresca, J. Wang, M. Kim, J. Kim, C.Y. Kang, R. Choi, S.C. Song, H.H. Tseng, B. H. Lee, R. Jammy,
"Determination of Strain in the Silicon Channel Induced by a Metal Electrode"
Microscopy and Microanalysis
,
13 (Suppl. 2),
p.838-839,
2007.08.05.
http://doi.org/10.1017/S143192760707465X.
10
C.Y. Kang, R. Choi, M. Hussain, J. Wang, Y.J. Suh, H. Floresca, M. Kim, J. Kim, B. H. Lee, R. Jammy,
"Effects of Metal Gate-Induced Strain on the Performance of Metal-Oxide-Semiconductor Field Effect Transistors with Titanium Nitride Gate Electrode and Hafnium Oxide Dielectric"
Appl. Phys. Lett.
,
91,
033511,
2007.07.19.
http://doi.org/10.1063/1.2766667.
9
Y. Wang, K. P. Cheung, R. Choi, G. A. Brown, B. H. Lee,
"Error and correction in capacitance-voltage measurement due to the presence of source and drain"
IEEE Electron Device Letters
,
28 (7),
p. 640-642,
2007.06.25.
http://doi.org/10.1109/LED.2007.899602.
8
C.D.Young, D. Heh, A. Neugroschel, R.Choi, B.H.Lee, G.Bersuker,
"Electrical characterization and analysis technique for high-k era"
Microelectronics Reliability
,
47,
p.479-488,
2007.04.09.
http://doi.org/10.1016/j.microrel.2007.01.053.
7
C.Y. Kang, R. Choi, S.C. Song and B. H. Lee,
"Effects of Gate Edge Profile On Off-state Leakage Suppression in Metal Gate/High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors"
Appl. Phys. Lett.
,
90,
183501,
2007.04.30.
http://doi.org/10.1063/1.2734381.
6
S. Joshi, C. Krug, D. heh, H.J. Na, H.R. Harris, J.W, Oh, P.D. Kirsch, P. Majhi, B. H. Lee, H.H. Tseng, R. Jammy, J.C. Lee, S.K. Banerjee,
"Improved Ge Surface Passivation With Ultrathin SiOx Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack"
IEEE Electron Device Letters
,
28 (4),
p.308-311,
2007.04.02.
http://doi.org/10.1109/LED.2007.893274.
5
Y. Wang, K. P. Cheung, R. Choi, G. A. Brown, B. H. Lee,
"Accurate series resistance extraction from capacitor using Time-Domain-Reflectometry"
IEEE Electron Device Letters
,
28 (4),
p.279-281,
2007.03.26.
http://doi.org/10.1109/LED.2007.891751.
4
G.Bersuker, J.H.Sim, C.S.Park, C.D.Young, S.V.Nadkarni, R.Choi and B. H. Lee,
"Mechanism of electron trapping and characteristics of traps in HfO2 gate stacks"
IEEE Transactions on Device and Materials Reliability
,
7 (1),
p.138-145,
2007.07.16.
http://doi.org/10.1109/TDMR.2007.897532.
3
Y. Wang, K. P. Cheung, R. Choi, G. A. Brown, B. H. Lee,
"Time Domain Reflectometry for capacitance-voltage measurement with very high leakage current"
IEEE Electron Device Letters
,
28 (1),
p.51-53,
2006.12.26.
http://doi.org/10.1109/LED.2006.887628.
2
M. Chang, M. Jo, H. Park, H. Hwang, B. H. Lee, and R.Choi,
"Effect of F2 Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate Dielectric"
IEEE Elec. Dev. Lett.
,
28 (1),
p.21-23,
2006.12.26.
https://doi.org/10.1109/LED.2006.887941.
1
O. Sharia, A.Demkov, G.Bersuker, B. H. Lee,
"Theoretical study of the insulator/insulator interface: Band alignment at the SiO2/HfO2 junction"
Phys. Rev. B
,
75,
035306,
2007.01.05.
https://doi.org/10.1103/PhysRevB.75.035306.
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