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게시판 검색
2010
6
W.H. Choi, C.-Y. Kang, J.-W. Oh, B.H. Lee, P. Majhi, H.M. Kwon, R. Jammy, G.W. Lee and H.D. Lee,
"Trade-off Between Hot Carrier and Negative Bias Temperature Degradations in High Performance Si1-xGe1-x pMOSFETs with High-k/Metal Gate Stacks"
IEEE Electron Device Lett.
,
31(11),
1211-1213,
2010.10.07.
10.1109/LED.2010.2071851.
5
H.B. Park, C.S.Park, C.Y. Kang, S.-C. Song, B.H. Lee, T.W. Kim, T.-Y. Jang, D.-H. Kim, J. K. Jeong, and Ri. Choi,
"Performance and reliability analysis of p-type metal-oxide-semiconductor field effect transistors with various combinations of Ru and Al gate metal"
J. Vac. Sci. Technol.
,
28(6),
1267,
2010.11.11.
https://doi.org/10.1116/1.3514103.
4
J.W. Lee, B.H. Lee, H.C. Shin, J.H. Lee,
"Comparison of Low Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-k nFETs"
IEEE Elect. Dev. Lett.
,
31(10),
1086-1088,
2010.08.12.
10.1109/LED.2010.2058839.
3
C.D. Young, D. Heh, R. Choi, B.H. Lee, G. Bersuker,
"The Pulsed Id-Vg methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics"
J. Semi. Tech. Sci.
,
10(2),
79-99,
2010.06.30.
https://doi.org/10.5573/JSTS.2010.10.2.079.
2
J.-W. Lee, B.H. Lee, H. Shin, and J.-H. Lee,
"Investigation of Random Telegraph Noise in Gate Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-k MOSFETs"
IEEE Trans. on Elect. Dev.
,
57(4),
913-918,
2010.02.25.
10.1109/TED.2010.2041871.
1
M.H. Choe, G.H. Jo, J.S. Maeng, W.-K. Hong, M.S. Jo, G.U. Wang, W.J. Park, B.H. Lee, H. Hwang, and T. Lee,
"Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness"
J. Appl. Phys
,
107(3),
034504,
2010.02.05.
https://doi.org/10.1063/1.3298910.
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