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Total 16건 1 페이지

2011
16

K.T.Lee, C.Y.Kang, H.S.Choi, S.H.Hong, G.B.Choi, J.C.Kim, S.H.Song, R.H.Baek, M.S.Park, H.C. Sagong, B.H.Lee, G.Bersuker, H.H.Tseng, R.Jammy, Y.H.Jeong, "A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs" Microelectronics Engineering, 88, p.3411, 2011.12. https://doi.org/10.1016/j.mee.2009.08.002.
15

H.M. Kwon, W.H. Choi, I.S. Han, M.K. Na, S.U. Park, J.D. Bok, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee, "Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs" Microelectronics Engioneering, 88, 3399-3403, 2011.12. https://doi.org/10.1016/j.mee.2010.04.002.
14

H.M. Kwon, W.H. Choi, I.S. Han, S.U. Park, B.S. Park, Y.Y. Zhang, C.Y. Kang, B.H.Lee, R. Jammy, H.D.Lee, "Analysis of trap effect on reliability using the charge pumping technology in La-incorporated high-k dielectrics" Microelectronics Engineering, 88, 3415-3418, 2011.12. https://doi.org/10.1016/j.mee.2010.06.007.
13

S.S. Park, J.H. Shin, S. Cimino, S.J. Jung, J.M. Lee, S.H. Kim, J.B. Park, W.T. Lee, M.W. Son, B.H. Lee, L. Pantisano and H. Hwang, "Feasibility Study of Mo/SiOx/Pt Resistive Random Access Memory in an Inverter Circuit for FPGA Applications" IEEE Elect. Dev. Lett., 32(12), P.1665, 2011.10.20. https://doi.org/10.1109/LED.2011.2168376.
12

S.H. Kim, J.B. Park, S.J. Jung, W.T. Lee, J.Y.Woo, C.Cho, M. Siddik, J.H. Shin, B.H.Lee, H.Hwang, "Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations" Appl. Phys. Lett., 99(19), 192110, 2011.11.11. http://link.aip.org/link/doi/10.1063/1.3659692?ver=pdfcov.
11

S.U.Park, H.M,Kwon, I.S. Han, Y.J. Jung, H.Y.Kwak, W.I. Choi, M.L. Ha, J.I. Lee, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee, "Comparison of multilayer dielectric thin films for future metal-insulator-metal capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2" Jpn. J. of Appl. Phys., 50(10), Part 2, 2011.10.20. http://dx.doi.org/10.1143/JJAP.50.10PB06.
10

C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, J.S.Heo, H.J.Chung, S.Seo, B.H.Lee*, "Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment" IEEE Elec. Dev. Lett., 32(11), p1591, 2011.11. https://doi.org/10.1109/LED.2011.2166240.
9

Y.H. Kim, G. Wang, M.H. Choe, J.W. Kim, S.C. Lee, S.J. Park, D.-Y. Kim, B.H. Lee, T. Lee, "Electronic properties associated with conformational changes in azobenzene-derivative molecular junctions" Organic Electronics, 12, p.2144, 2011.12. https://doi.org/10.1016/j.orgel.2011.08.017.
8

H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, C.G.Kang, H.Hwang, B.H.Lee*, "Electrical Characteristics of Wrinkle-Free Graphene Formed by Laser Graphitization of 4H-SiC" Appl. Phys. Lett., 99, 082111, 2011.08.26 Also, published in Virtual J. of Nanoscale Science and Technology, 24(11), Sep. 2011.. https://doi.org/10.1063/1.3629785.
7

S.C.Lee, S.J.Kang, G.H.Jo, M.H.Cho, W.J.Park, J.W.Woon, T.H.Kwon, Y.H.Kahng, D.Y.Kim, B.H.Lee, T.Lee, "Enhanced charactteristics of pentacene field-effect transistors with graphene electrodes and substrate treatments" Appl. Phys. Lett., 99, 083306, 2011.08.25. https://doi.org/10.1063/1.3629994.
6

C. G. Kang, J.W. Kang, S.K. Lee, S.Y. Lee, C.H. Cho, H.J. Hwang, Y.G. Lee, J. Heo, H.-J. Chung, H. Yang, S. Seo, S.-J. Park, K.Y. Ko, J. Ahn and B.H. Lee*, "Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask" Nanotechnology, 22, p.295201, 2011.06.14. http://dx.doi.org/10.1088/0957-4484/22/29/295201.
5

K.Seo, I.S.Kim, S.J. Jung, M.S.Jo, S.S.Park, J.B.Park, J.H. Shin, K.P. Biju, J.M.Kong, K.H.Lee, B.H. Lee, H. Hwang, "Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device" Nanotechnology, 22(25), p.254023, 2011.05.16. http://dx.doi.org/10.1088/0957-4484/22/25/254023.
4

Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Jeong, S. Seo, R. Choi, B.H. Lee, "Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics" Appl. Phys. Lett., 98, 183508, 2011.05.06. https://doi.org/10.1063/1.3588033.
3

H.M. Kwon, I.S. Han, S.U.Park, J.D.Bok, Y.J. Jung, H.S. Shin, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee, "Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2 Layer" Jpn. J. of Appl. Phys., 50(4), Part 2, 04DD02, 2011.04.20. DOI: 10.1143/JJAP.50.04DD02.
2

Y. H. Kahng, S.C. Lee, M. Choe, G. Jo, W.J. Park, J.W. Yoon, W.-K. Hong, C. Cho, B.H. Lee, and T. Lee, "A study of graphene films synthesized on nickel substrates: existence and origin of small-base-area peaks" Nanotechnology, 22, 045706, 2010.12.20. http://dx.doi.org/10.1088/0957-4484/22/4/045706.
1

B.H.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, and H.Hwang, "Nano-Electromechanical Switch-CMOS Hybrid Technology and Its Applications" J. Nanoscience and Nanotechnology, 11, 1, p.256-261, 2011.01.01. https://doi.org/10.1166/jnn.2011.3154.

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