Journals 1 페이지 | 포항공대 EESL

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Total 21건 1 페이지

2019
21

S. Choi, Y.J. Kim, J. Jeon, B.H. Lee, J.H. Cho, S. Lee, "Scalable Two-Dimensional Lateral Metal/Semiconductor Junction Fabricated with Selective Synthetic Integration of Transition-Metal-Carbide (Mo <sub>2</sub> C)/-Dichalcogenide (MoS <sub>2</sub> )" ACS Applied Materials & Interfaces, 11 (50), 47190-47196, 2019.11.25. https://doi.org/10.1021/acsami.9b13660.
20

J. Jeon, H. Choi, S.Choi, J.H.Park, B.H.Lee, E. Hwang, S.J.Lee, "Transition‐Metal‐Carbide (Mo <sub>2</sub> C) Multiperiod Gratings for Realization of High‐Sensitivity and Broad‐Spectrum Photodetection" Advanced Functional Materials, 29 (48), 1905384, 2019.09.16. https://doi.org/10.1002/adfm.201905384.
19

M.Son, H.Kim, J.Jang, S.Y.Kim, H.C.Ki, B.H.Lee, I.Kim, M.H.Ham, "Low-Power Complementary Logic Circuit Using Polymer-Electrolyte-Gated Graphene Switching Devices" ACS Applied Materials & Interfaces, 11 (50), 47247-47252, 2019.11.20. https://doi.org/10.1021/acsami.9b16417.
18

H.J.An, H. Hong, Y.R.Jo, J.M.Lee, H.J.Yoon, S.Y. Kim, J.S. Song, S.Y. Jeong, B.H.Lee, B.J.Kim, S.G.Jung, T.S.Park, S.M.Kim, C.W.Bark, S.W.Kim, T.Y. Koo, K.T.Ko,, B.J.Kim, S.H.Lee, "Reversible magnetoelectric switching in multiferroic three-dimensional nanocup heterostructure films" NPG Asia Materials, 11 (1), 68, 2019.11.29. https://doi.org/10.1038/s41427-019-0172-4.
17

Y.J. Yoo, Y.J. Kim, S.Y. Kim, J.H. Lee, J.H.Ko, J.W.Lee, K.J. Kim, B.H.Lee, Y.M. Song, "Mechanically robust antireflective moth-eye structures with a tailored coating of dielectric materials" Optical Materials Express, 9 (11), 4178, 2019.10.02. https://doi.org/10.1364/OME.9.004178.
16

J.Y.Jia, J.J. Jeon, J.H.Park, B.H.Lee, E.H. Hwang, S.J.Lee, "Avalanche Carrier Multiplication in Multilayer Black Phosphorus and Avalanche Photodetector" Small, 15 (38), 1805352, 2019.08.07. https://doi.org/10.1002/smll.201805352.
15

S.C.Kang, D.H.Kim,S.J. Kang, S.K.Lee, C.H.Choi, D.S.Lee and B.H. Lee, "Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics" IEEE Electron Device Letters, 40 (11), 1716-1719, 2019.09.23. https://doi.org/10.1109/LED.2019.2942837.
14

S.W.Heo, M.G. Gwon, C.H. Kim, S.M. Kim, Y.S. Lee, K.E. Chang and B.H. Lee, "Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifier" AIP Advances, 9 (9), 095009, 2019.09.10. https://doi.org/10.1063/1.5117894.
13

N.S.Lim, Y.S.Park, J.K. Kim, T.J.Yoo, H.H. Kim, Y. Kumaresan, W.C.Kim, S.J. Cho, S.C.Kwon, B.H.Lee, T.H.Lee, G.Y.Jung, "Enhanced Photo‐Response of Mos <sub>2</sub> Photodetectors by a Laterally Aligned SiO <sub>2</sub> Nanoribbon Array Substrate" ChemNanoMat, 5 (10), 1272-1279, 2019.08.13. https://doi.org/10.1002/cnma.201900404.
12

B.H.Lee, "CMOS technology on another level" Nature Electronics, 2 (7), 272-273, 2019.07.15 (News and views). https://doi.org/10.1038/s41928-019-0277-3.
11

Y.Yang, J.H.Jeon, J.H.Park, M.S. Jeong, B.H.Lee, E.H.Hwang, S.J.Lee, "Plasmonic Transition Metal Carbide Electrodes for High-Performance InSe Photodetectors" ACS Nano, 13 (8), 8804-8810, 2019.08.27. https://doi.org/10.1021/acsnano.9b01941.
10

J.S.Song, K.S.Choi, S.J.Yoon, W.B.Sohn, S.P.Hong, T.H.Lee, H.J.An, S.Y.Cho, S.Y.Kim, D.H.Kim, T.M.Kim, S.Y.Jeong, C.W.Bark, B.H.Lee, S.D.Bu, H.W.Jang, C.H.Jeon, S.H.Lee, "Enhancement of Ferroelectric Properties of Superlattice-Based Epitaxial BiFeO <sub>3</sub> Thin Films via Substitutional Doping Effect" The Journal of Physical Chemistry C, 123 (18), 11564-11571, 2019.05.09. https://doi.org/10.1021/acs.jpcc.9b00156.
9

S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee, "Interface state degradation during AC positive bias temperature instability stress" Solid-State Electronics, 158, 46-50, 2019.05.10. https://doi.org/10.1016/j.sse.2019.05.006.
8

S.K. Lee, Y.J. Kim, S. Heo, W. Park, T.J. Yoo, C. Cho, H.J. Hwang, and B.H. Lee*, " Advantages of a buried-gate structure for graphene field-effect transistor, "Advantages of a buried-gate structure for graphene field-effect transistor" Semiconductor Science and Technology, 34 (5), 055010, 2019.04.09. https://doi.org/10.1088/1361-6641/ab0d54.
7

S.Y. Kim, J.W. Hwang, Y.J. Kim, H.J. Hwang, M.W. Son, N. Revannanth, M.H.Ham, K.J. Cho, B.H. Lee, "Threshold Voltage Modulation of a Graphene–ZnO Barristor Using a Polymer Doping Process" Advanced Electronic Materials, 5 (7), 1800805, 2019.05.06. https://doi.org/10.1002/aelm.201800805.
6

L. Lee, J.W. Hwang, J.W. Jung, J.C. Kim, H.I. Lee, S.W.Heo, M.H. Yoon, S.Ju. Choi, N.V.Long, J.S. Park, J.W. Jeong, J. Kim, K.R. Kim, D.H.Kim, S.I. Im, B.H.Lee, K.J.Cho, M.M. Sung, "ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors" Nature Communications, 10 (1), 1998, 2019.04.30. https://doi.org/10.1038/s41467-019-09998-x.
5

K.E.Chang, C.H.Kim, T.J.Yoo, M.K.Kwon, S.Heo, S.Y.Kim, Y.Hyun, J.I.Yoo, H.C.Ko, B.H. Lee, "High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction" Advanced Electronic Materials, 5 (6), 1800957, 2019.03.28. https://doi.org/10.1002/aelm.201800957.
4

S.Y.Kim, M.B. Kim, H.J.Hwang, B. Allouche, B.H.Lee, "Chemically doped graphene based ternary field effect transistors" Japanese Journal of Applied Physics, 58 (SB), SBBH04, 2019.04.01. https://doi.org/10.7567/1347-4065/aaffbb.
3

H.J. Hwang, S.Y. Kim, S.C. Kang, B. Allouche, B.H. Lee, "Piezoelectrically modulated touch pressure sensor using a graphene barristor" Japanese Journal of Applied Physics, 58 (SB), SBBH03, 2019.04.01. https://doi.org/10.7567/1347-4065/aafc99.
2

M.Son, S.S.Chee, S.Y.Kim, W.Lee, Y.H.Kim, B.Y.Oh, J.Y.Hwang, B.H.Lee, M.H.Ham, "High-quality nitrogen-doped graphene films synthesized from pyridine via two-step chemical vapor deposition" Carbon, 159, p.579, 2019.12.31. https://doi.org/10.1016/j.carbon.2019.12.095.
1

S.Y. Kim, J.W. Hwang, Y.J. Kim, H.J. Hwang, M.W. Son, N. Revannanth, M.H.Ham, K.J. Cho, B.H. Lee, "Threshold Voltage Modulation of Graphene-ZnO Barristor Using a Polymer Doping Process" Advanced Electronic Materials, 5 (7), 1800805, 2019.05.06. https://doi.org/10.1002/aelm.201800805.

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