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    • Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
    Journal
    Applied Physics Letters
    Vol
    76
    Page
    1926
    Author
    B. H. Lee, L. Kang, R. Nieh, W. Qi, and J. C.Lee
    Year
    2000
    Date
    2000.03.27 (First journal paper on thin HfO2 gate dielectric, cited more than 750 times)
    doi
    https://doi.org/10.1063/1.126214
    File
    2000_APL_B.H.Lee.pdf (290.4K) 1회 다운로드 DATE : 2021-04-01 15:04:53