Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
- Journal
- Japanese Journal of Applied Physics
- Vol
- 44 (4B)
- Page
- 2201-2204
- Year
- 2005
- File
- 2005_JJAP_R.Choi.pdf (207.2K) 0회 다운로드 DATE : 2021-04-01 16:06:15
- Link
- https://doi.org/10.1143/JJAP.44.2201 171회 연결