Effects of Boron Diffusion in pMOSFETs With TiN-HfSiO Gate Stack
- Journal
- IEEE ELECTRON DEVICE LETTERS
- Vol
- 26 (6)
- Page
- 366
- Year
- 2005
- File
- 2005_EDL_S.C.Song.pdf (368.9K) 0회 다운로드 DATE : 2021-04-01 16:23:09
- Link
- https://doi.org/10.1109/LED.2005.848071 181회 연결