목록 게시판 리스트 옵션 검색 Effect of ALD HfO2 thickness on charge trapping and mobility Journal Microelectronic Engineering Vol 80 Page 218-221 Author J.H.Sim, S.C.Song, P.D.Kirsch, C.D.Young, R.Choi, D.L.kwong, B. H. Lee and G.Bersuker Year 2005 Date 2005.06.17 doi https://doi.org/10.1016/j.mee.2005.04.071 File 2005_ME_JHSIM.pdf (348.8K) 0회 다운로드 DATE : 2021-04-01 16:29:23 Link https://doi.org/10.1016/j.mee.2005.04.071 628회 연결