포항공대 EESL Fearless challenge

Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes

Journal

APPLIED PHYSICS LETTERS

Vol

87

Page

082903

Author

P. S. Lysaght, B. Foran, G. Bersuker, J. J. Peterson, C. D. Young, P. Majhi, B. H. Lee, and H. R. Huff

Year

2005

Date

2005.08.15

doi

https://doi.org/10.1063/1.2011827

File

2005_APL_P.S.Lysaght.pdf (447.5K) 0회 다운로드 DATE : 2021-04-01 16:39:27

Link

https://doi.org/10.1063/1.2011827 193회 연결