포항공대 EESL EESL Fearless challenge

전체메뉴

전체메뉴
CONTACT US
  • LOGIN
    • Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique
    Journal
    APPLIED PHYSICS LETTERS
    Vol
    87
    Page
    122901
    Author
    R. Choi, S. C. Song, C. D. Young, G. Bersuker, and B. H. Lee
    Year
    2005
    Date
    2005.09.16
    doi
    https://doi.org/10.1063/1.2043252
    File
    2005_APL_R.Choi.pdf (342.3K) 0회 다운로드 DATE : 2021-04-01 16:44:06