Performance of HfO2 Gate Stacks with in-situ Grown and O3 Chemical Interfacial Oxide Layers
- Journal
- APPLIED PHYSICS LETTERS
- Vol
- 87
- Page
- 253510
- Year
- 2005
- File
- 2005_APL_CSPARK.pdf (909.3K) 0회 다운로드 DATE : 2021-04-01 16:51:26
- Link
- https://doi.org/10.1063/1.2149511 206회 연결