포항공대 EESL Fearless challenge

Ferroelectric/Dielectric Double Gate Insulator Spin-Coated by Using Barium Titanate Nanocrystals for Indium Oxide Nanocrystal–Based Thin-Film Transistor

Journal

ACS Applied Materials and Interfaces

Vol

8(11)

Page

p. 7248-7256

Author

H.T.Pham, J.H.Yang, D.S. Lee, B.H.Lee, H.D.Jeong

Year

2016

Date

2016.03.10

doi

https://doi.org/10.1021/acsami.6b00109

File

2016-ACSMI-BTO_NC_In2O3_NC_TFT.pdf (6.8M) 0회 다운로드 DATE : 2021-04-01 17:06:33

Link

https://doi.org/10.1021/acsami.6b00109 203회 연결