포항공대 EESL Fearless challenge

Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress

Journal

IEEE Electron Device Letters

Vol

37(4)

Page

p.366-368

Author

Y.H.Kim, S.C.Kang, S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*

Year

2016

Date

2016.03.01

doi

https://doi.org/10.1109/LED.2016.2533568

File

2016-EDL-YHKim-2.pdf (959.1K) 1회 다운로드 DATE : 2021-04-01 17:12:31

Link

https://doi.org/10.1109/LED.2016.2533568 145회 연결