포항공대 EESL Fearless challenge

Origin of the channel width dependent field effect mobility of graphene field effect transistors

Journal

Microelectronic Engineering

Vol

163

Page

p.55-59

Author

Y.G.Lee, S.K.Lim, C.G.Kang, Y.J.Kim, D.H.Choi, H.J.Chung, R.Choi, B.H.Lee*

Year

2016

Date

2016.06.06

doi

https://doi.org/10.1016/j.mee.2016.06.004

File

2016-ME-YGLEE.pdf (680.1K) 0회 다운로드 DATE : 2021-04-01 17:14:44

Link

https://doi.org/10.1016/j.mee.2016.06.004 184회 연결