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    • Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer
    Journal
    Scientific Reports
    Vol
    6
    Page
    37764
    Author
    Y. Kumaresan, Y.S. Pak, N.S. Lim, Y.H. Kim, M.J. Park, S.M. Yoon, H.M. Youn, H. Lee, B.H. Lee, G.Y. Jung
    Year
    2016
    Date
    2016.11.23
    doi
    https://doi.org/10.1038/srep37764
    File
    2016-srep37764.pdf (2.0M) 0회 다운로드 DATE : 2021-04-01 17:39:07