Unveiling the role of Al2O3 interlayer in indium gallium zinc oxide transistors
Journal
Physica Status Solidi A
Vol
218(6)
Page
2000621
Author
T.H.Kim, W.J.Park, S.Y. Oh, S.Y. Kim, N. Yamata, H. Kobayashi, H.Y. Jang, J.H. Nam, H. Habazaki, B.H. Lee, B.J. Cho
Year
2021
Date
2020.12.30
doi
https://doi.org/10.1002/pssa.202000621
File
pssa.202000621.pdf (2.2M) 2회 다운로드 DATE : 2021-04-01 17:45:36