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Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry

Journal

IEEE Transactions on Electron Devices

Vol

62 (4)

Page

1092-1097

Author

Y.H. Kim, Y.G. Lee, U. Jung, J.J. Kim, M.H. Choe, K.T. Lee, S.W. Pae, J.W. Park, B.H.Lee

Year

2015

Date

2015.03.20

doi

https://doi.org/10.1109/TED.2015.2404920

File

2015-TED-YHKim.pdf (1.6M) 3회 다운로드 DATE : 2021-04-01 20:53:48

Link

https://doi.org/10.1109/TED.2015.2404920 174회 연결