Advantages of a buried-gate structure for graphene field-effect transistor
Journal
Semiconductor Science and Technology
Vol
34 (5)
Page
055010
Author
S.K. Lee, Y.J. Kim, S. Heo, W. Park, T.J. Yoo, C. Cho, H.J. Hwang, and B.H. Lee*, " Advantages of a buried-gate structure for graphene field-effect transistor
Year
2019
Date
2019.04.09
doi
https://doi.org/10.1088/1361-6641/ab0d54
File
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