Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics
Journal
IEEE Electron Device Letters
Vol
40 (11)
Page
1716-1719
Author
S.C.Kang, D.H.Kim,S.J. Kang, S.K.Lee, C.H.Choi, D.S.Lee and B.H. Lee
Year
2019
Date
2019.09.23
doi
https://doi.org/10.1109/LED.2019.2942837
File
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