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Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness

Journal

J. Appl. Phys

Vol

107(3)

Page

034504

Author

M.H. Choe, G.H. Jo, J.S. Maeng, W.-K. Hong, M.S. Jo, G.U. Wang, W.J. Park, B.H. Lee, H. Hwang, and T. Lee

Year

2010

Date

2010.02.05

doi

https://doi.org/10.1063/1.3298910

File

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Link

https://doi.org/10.1063/1.3298910 185회 연결