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    • Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors
    Journal
    Nanotechnology
    Vol
    23 (48)
    Page
    485201
    Author
    M. Choe, W. Park, J.W. Kang, S.H. Jeong, W.K. Hong, B.H. Lee, S.J. Park, T. Lee
    Year
    2012
    Date
    2012.12.07
    doi
    http://doi.org/10.1088/0957-4484/23/48/485201
    File
    2012-Nanotech-MHCHOE.pdf (1.1M) 0회 다운로드 DATE : 2021-04-02 17:51:29