포항공대 EESL Fearless challenge

Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

Journal

Microelectronics Engineering

Vol

107

Page

p.33-36

Author

S.H. Kim, J.B. Park , J.Y. Woo , C. Cho , W.T. Lee , J.H. Shin , G. Choi , S.S. Park , D.S. Lee , B.H. Lee , H. Hwang

Year

2013

Date

2013.07

doi

http://dx.doi.org/10.1016/j.mee.2013.02.084

File

2013-ME-SHKIM.pdf (1.1M) 1회 다운로드 DATE : 2021-03-30 22:07:27

Link

http://dx.doi.org/10.1016/j.mee.2013.02.084 197회 연결