Area and Power Efficient Ternary Serial Adder Using ZnO Stack Channel FETs
Journal
Nanoscale Advances
Vol
7
Page
3508-3513
Author
K.Kim, S.M.Kim, S.Y. Kim, Y.S.Lee, H.W.Lee, S.H Kang, B.H.Lee*
Year
2025
Date
2025
File
Area and Power Efficient Ternary Serial Adder Using ZnO Stack Channel FETs.pdf (955.2K) 13회 다운로드 DATE : 2025-04-21 17:21:46