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    • Extremely Thin (~2 nm) Proximity Pt Silicide Formation Process using Continuous-Wave Laser Scanning Anneal
    Journal
    IEEE Electron Device Letters
    Vol
    45(10)
    Page
    1941
    Author
    S.M.Kim, M.G.Kwon, M.J.Kim, C.B.Lee, K.S.Kim, H.J.Hwang, J.Kim, B.H.Lee
    Year
    2024
    Date
    2024
    doi
    10.1109/LED.2024.3440910
    File
    2024 EDL SMKim.pdf (4.2M) 1회 다운로드 DATE : 2024-10-22 21:43:29