Impact of Post-Metal Annealing with Deuterium or Nitrogen for Curing a Gate Dielectric using Joule Heat Driven by Punch-Through Current
Journal
IEEE Electron Device Letters
Vol
42(2)
Page
pp. 276-279
Author
J.Y. Park, T.J. Yoo, J.M. Yu, B.H. Lee, Y.G. Choi
Year
2021
Date
2021.02.02
doi
http://doi.org/10.1109/LED.2020.3043384
File
09288681.pdf (1.2M) 3회 다운로드 DATE : 2021-03-31 17:35:21