Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Journal
Nanomaterials
Vol
10(11)
Page
2116
Author
S.C.Kang, H.-W.Jung, S.-J.Chang, S.M.Kim, S.K.Lee, B.H.Lee, H.Kim, Y.-S.Noh, S.-H.Lee, S.-I.Kim, H.-K.Ahn, J.-W Lim
Year
2020
Date
2020.08.24
doi
https://doi.org/10.3390/nano10112116
File
nanomaterials-10-02116-v2.pdf (4.3M) 1회 다운로드 DATE : 2021-03-31 18:46:28