Conferences 1 페이지 | 포항공대 EESL

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Total 10건 1 페이지

2000
10

International
"Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8Å-12Å)" B. H. Lee, R. Choi, L. Kang, S. Gopalan, R. Nieh, K. Onishi, Y.Jeon, W. Qi, C. Kang, and J. C. Lee, Tech Dig. of Int. Electron Device Meetings, 2000.

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9

International
"MOSFET Devices with Polysilicon Electrode on Single-Layer HfO2 High-K Dielectrics" L. Kang, K. Onishi, Y.Jeon, B. H. Lee, C.S> Kang; W.-J. Qi, R. Nieh, S. Gopalan; R. Choi, Jack C. Lee, Tech. Dig. of International Electron Device Meetings, 2000.

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8

International
"Single-layer thin HfO2 gate dieletric with n+-polysilicon gate" L. Kang, Y. Jeon, K. Onishi, B. H. Lee, W. Qi, R. Nieh, S. Gopalan, and J.C. Lee, Proc. of Symposium on VLSI technology, 2000.

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7

International
"Performance of MOSFETs with ultrathin ZrO2 and Zr silicate gate dieletrics" W. Qi, R. Nieh, B. H. Lee, K. Onishi, L. Kang, Y. Jeon, V. Kaushik, B.-Y. Neuyen, L. Prabhu, K. Eisenbeiser, J. Finder, and J. C. Lee, Proc. of Symposium on VLSI technology, 2000.

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6

International
"Rotating compensator spectroscopic ellipsometry (RCSE) and its application to high k dielectric film HfO2" J. Leng, S. Li, J.L Opsal, D.E. Aspnes, B. H. Lee, J.C. Lee, Proc. SPIE - Int. Soc. Opt. Eng. (USA), 2000.
5

International
"Processing effect and electrical characteristics of ZrO2 formed by RTP oxidation of Zr" R. Nieh, W. Qi, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, and J. C. Lee, ECS spring meeting, Ontario, 2000.

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4

International
"Hafnium and Zirconium based High-k dielectrics" J.C. Lee, B. H. Lee, K. Onishi, L. Kang, Y. Jeon, R. Nieh, W. Qi, and R. Choi, MRS workshop on High-k gate dielectrics, New Orleans, 2000, invited.
3

International
"Temperature effect on the reliability of ZrO2 gate dielectric deposited directly on silicon" W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, S. Gopalan, and J. C. Lee, Proceedings of International Reliability Physics Symposium, 2000.

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2

International
"ZrO2 , Zr-silicate, and HfO2 Gate Dielectrics" J. Lee, B. H. Lee, W.Qi, R.Nieh, L.Kang, Y.Jeon, and K.Onishi, the Paris Future Development Conference, 2000, invited.
1

International
"Interface between c-Si and the High-k dielectric HfO2: Characterization by rotating compensator spectroscopic ellipsometry (RCSE)" J. Leng, S.Li, J.Opsal, B. H. Lee, and J. C. Lee, Proceedings of AVS First International Conference on Microelectronics and Interfaces, Pheonix, Arizona, 2000.

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