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Total 38건 1 페이지

2004
38

International
"Recovery of NBTI degradation in HfSiON /Metal Gate Transistors" H. Rusty Harris, R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, P. Zeitzoff, P. Majhi, and G. Bersuker, Integrated Rel. Workshop, 2004.

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37

International
"Polarity dependence of FN Stress induced degradation on NMOSFETs with Polysilicon Gate and HfSiON Gate Dielectrics" R. Choi, B. H. Lee, G. Brown, P. Zeitzoff, J. H. Sim, and J. C. Lee, International symposium on the physical and failure analysis of integrated circuits (IPFA), 2004.

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36

International
"Thermally robust dual-work function ALD-MNx MOSFETs using conventional CMOS process flow" D.-G. Park, Z.J. Luo, N. Edleman, W. Zhu, P. Nguyen, K. Wong, C. Cabral, P. Jamison, B. H. Lee, A. Chou, M. Chudzik, J. Bruley, O. Gluschenkov, P. Ronsheim, A. Chakravarti, R. Mitchel, V. Ku, H. Kim, E. Duch, P. Kozlowski, C.D’Emic,V. Narayanan, A. Steege, Symposium on VLSI Technology, 2004.

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35

International
"Progress Toward High-k and Metal Gate Solutions for CMOS" R.W. Murto, M.I. Gardner, P. Majhi, N. Moumen, B. H. Lee, G.A. Brown, P. M. Zeitzoff, and H.R. Huff, Nano Material conference, 2004.
34

International
"C.Y. Kang, R. Choi, J. H. Sim, C. Young, B. H. Lee, G. Bersuker and Jack C. Lee" Charge Trapping Effects in HfSiON dielectrics on the Ring Oscillator Circuit and the Single Stage Inverter Operation, Tech Dig. of IEDM, 2004.

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33

International
"Intrinsic characteristics of high-k devices and implications of transient charging effects" B.H.Lee, C.D.Young, R.Choi, J.H.Sim, G.Bersuker, C.Y.Kang, R.Harris, G.A.Brown, K.Matthews, S.C.Song, N.Moumen, J.Barnett, P.Lysaght, K.S.Choi, H.C.Wen, C.Huffman, H.Alshareef, P.Majhi, S.Gopalan, J.Peterson, P.Kirsh, H.-J Li, J.Gutt, M.Gardner, H.R.Huff,, Tech.Dig. of IEDM, 2004.

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32

International
"Characterizing Hf-Based Bulk Film Properties Using Ultra-short Pulse I-V Measurement" C.D. Young, R. Choi, B. H. Lee, G. Bersuker, P. Zeitzoff, J.H. Sim, H.R. Harris, and G.A. Brown, SISC, 2004.
31

International
"The frequency dependence of AC stress induced charging and it’s relaxation in TiN/Hf-Silicate NMOSFETs" R. Choi, Rusty Harris, B. H. Lee, K. Matthews, Mike Pendley, Chadwin Young, J. H. Sim, G. Bersuker, SISC, 2004.
30

International
"An Improved Methodology for Gate Electrode Work Function Extraction in SiO2 and High-k Gate Stack Systems Using Terraced Oxide Structures" G. A. Brown, G. Smith, J. Saulters, K. Matthews, H.-C. Wen, H. AlShareef, P. Majhi and B. H. Lee, SISC, 2004.
29

International
"A Study of Charge Trapping Dynamics in HfSiON Dielectrics Using the Single Stage Inverter Circuit" C. Y. Kang, R. Choi, H. Rusty, B. H. Lee, G. Bersuker, and Jack C. Lee, SISC, 2004.
28

International
"Effective Minimization of Charge-trapping in High-k gate Dielectrics with an Ultra-short Pulse Technique" Y. Zhao, C.D. Young, M. Pendley, K. Matthews, B. H. Lee and G.A. Brown, 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.

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27

International
"Mobility Evaluation in High-K Devices" G. Bersuker, P. Zeitzoff, J. Sim, B. H. Lee, R. Choi, G. Brown, C. Young, Integrated Rel. Workshop, 2004.

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26

International
"Hot carrier stress study in Hf-silicate NMOS transistors" J. H. Sim, B. H. Lee, R. Choi, S. C. Songa, C. D. Younga P. Zeitzoffa, D.L. Kwong and G. Bersuker, Integrated Rel. Workshop, 2004.

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25

International
"Effects of drain to gate stress on NMOSFET with polysilicon/Hf-silicate gate stack" R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, G. Bersuker, P. Zeitzoff, Integrated Rel. Workshop, 2004.

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24

International
"Effect of pre-existing defects on reliability assessment of high-k gate dielectrics" G.Bersuker, J.H.Sim, C.Young, R.Choi, P.Zeizoff, G,Brown, B. H. Lee and R.A.Murto, ESREF, 2004.

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23

International
"Electrical and Materials Characterization of Atomic Layer Deposited HfO2 Using Hf[N(CH3)C2H5]4 and O3 on HF Last Surface" P. D. Kirsch, J. Gutt, J. J. Peterson, S. Gopalan, S. Krishnan, H.-J. Li, P.Y. Hung, M. C. Chudzik, M. Gardner, B. H. Lee and H. R. Huff, 11th Workshop on oxide electronics, 2004.
22

International
"Effect of Underlying Dielectric Film on the ALD-TiN film Properties" K. Choi, H.-C. Wen, P. Majhi, and B. H. Lee, 11th Workshop on oxide electronics, 2004.
21

International
"Effects of NH3 pre-anneal deposition on ALD high-k gate stacks" N. Moumen, J.J. Peterson, J. Barnett, B. H. Lee, J.H. Sim, R.W. Murto, G. Bersuker and H.R. Huff, Electrochemical Society Symposium, 2004.

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20

International
"Enhanced Surface Preparation Techniques for the Si/High-k Interface" J. Barnett, Chadwin D. Young, N. Moumen, G. Bersuker, J.J. Peterson, G.A. Brown, B. H. Lee and H. Huff, UCPSS, 2004.
19

International
"Enhanced Surface Preparation Techniques for the Si/High-k Interface" J. Barnett, C. D. Young, N. Moumen, G. Bersuker, J. J. Peterson, G. A. Brown, B. H. Lee, and H. R. Huff, Ultra Clean Processing of Silicon Surfaces Conference VII, Solid State Phenomena, 2004.
18

International
"Temperature effect of constant bias stress on MOSFET with HfSiON gate dielectric" R. Choi, B. H. Lee, J.H. Sim, G. Bersuker and G.A. Brown, SSDM, 2004.
17

International
"Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode" J.H. Sim, R. Choi, B. H. Lee, Chadwin Young and G. Bersuker, SSDM, 2004.

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16

International
"Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-k Devices" C. D. Young, Y. Zhao, M. Pendley, B. H. Lee, K. Matthews, J.H. Sim, R. Choi, G. Bersuker, and G.A. Brown, SSDM, 2004.
15

International
"Effects of high pressure hydrogen and deuterium anneal on TiN gate nMOSFET with Hf-base gate dielectrics" H.K. Park, B. H. Lee, M. Gardner, and H. Hwang, SSDM, 2004.
14

International
"Transient charging in high-k gate dielectrics and it’s implications" B.H. Lee, C. Young, R. Choi, J.H. Sim, G. Bersuker and P. Zeitzoff, SSDM, 2004.
13

International
"Hot carrier reliability of HfSiON PMOSFETs with Metal gate" J.H.Sim, B. H. Lee, R.Choi, K.Matthew, P.Zeitzoff, and G.Bersuker, International symposium on the physical and failure analysis of integrated circuits (IPFA), 2004.

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12

International
"Comparative Study of Trapping Characteristics of HfSiON Dielectric in nMOSFETs with Poly-Si or TiN as Gate Electrode" D. C. Guo, L.Y. Song, X.W. Wang, T. P. Ma, B. H. Lee, S.Gopalan, R.Choi, Electronic Materials Conference, 2004.
11

International
"Dual Metal Gate CMOS Using CVD Metal Gate Electrode" V. Narayanan, C.Cabral, F.R. McFeely, A.C. Callegari, S.Zafar, P.C. Jamison, A.L.Steegen, M.Gribelyuk, E. Cartier, V. Ku, P.Nguyen, A.Vayshenker, Y. Li, B. H. Lee, S.Guha, E.Gousev, M. Copel, D. Neumayer, R. Jammy, M. Ieong, W. Haensch, G.Shahidi, Electronic Material Conference, 2004.
10

International
"Hot Carrier Reliability of HfSiON NMOSFETs with Poly and TiN metal gate" J. H. Sim, B. H. Lee, R. Choi, K. Matthews, D.L. Kwong , P. Tsui, and G. Bersuker, Proc. of Device Research Conference, 2004.

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9

International
"Relaxation of FN stress induced Vth shift in nMOSFETs with HfSiON and TiN gate" R.Choi, B. H. Lee, J.H.Sim, G.Bersuker, L.Larson, J.C.Lee, Proc. of Device Research Conference, 2004.

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