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Total 42건 1 페이지

2006
42

International
"Advances and Challenges in Gate Stack Technology for nano scale CMOS Devices" B. H. Lee,, H.C.Wen, S. Song, R.Choi, P. Kirsch, P. Majhi and R. Jammy, Int. Conf. on Microelectronics, 2006.
41

International
"Tetragonal Phase Stabilization by Doping as Enabler of Highly Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM" T. S. Böscke, S. Govindarajan, C. Fachmann, J. Heitmann, A. Avellán, U. Schröder, S. Kudelka,P. D. Kirsch, C. Krug, P.Y. Hung, S.C. Song, B.S. Ju, J. Price, G. Pant, B. E. Gnade, W. Krautschneider, B. H. Lee and R. Jammy, Tech. Dig. of IEDM, 2006.

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40

International
"A novel in situ plasma treatment for damage-free metal/high-k gate stack RIE proces" B.S.Ju, S.C.Song, T.H.Lee, B.Sassman, C.Y.Kang, B. H. Lee, R.Jammy, IEDM, 2006.

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39

International
"Simplified manufacturable band edge metal gate solution for NMOS without a capping layer" H. R.Harris, H. Alshareef, H.C. Wen, S. Krishnan, K. Choi, H. Luan, D. Heh, C.S. Park, H.B. Park, M. Hussain, B.S. Ju, P.D. Kirsch, S.C. Song, P. Majhi, B. H. Lee, R. Jammy, IEDM, 2006.

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38

International
"An accurate lifetime analysis methodology incorporating governing NBTI mechanisms in high-k/SiO2 gate stacks" A. Neugroschel, G. Bersuker, R. Choi, C. Cochrane, P. Lenahan, D. Heh, C. Young, C.Y. Kang, B. H. Lee, R. Jammy, IEDM, 2006.

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37

International
"Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability" P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B. H. Lee, J.G. Wang, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, an, Tech. Dig. of IEDM, 2006.

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36

International
"Performance Enhancement of pMOSFETs with Optimized HfO2/TiN Gate Stack on Si(110) Substrates" S.A. Krishnan, R. Harris, P.D. Kirsch, C. Krug, M. Quevedo, C.Young, B. H. Lee, R. Choi, N. Chowdhury, S. Thomson, G. Bersuker, and R. Jammy, Tech. Dig. of IEDM, 2006.
35

International
"A novel electrode induced strain engineering for High performance SOI finFET utilizing Si(110) channel for both nMOS and pMOS" C.Y. Kang, R. Choi, S. C. Song, K. Choi, B. S. Ju, M. M. Hussain, B. H. Lee, G. Bersuker, C. Young, D. Heh, P. Kirsch, J. Barnet, J-W. Yang, P. Zeitzoff, H-H Tseng, R. Jammy, Tech. Dig. of IEDM, 2006.

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34

International
"Improved passivation and characterization of the Ge/HfSiO interface enabling surface channel Ge pFETs" H. J. Na, C. Krug, S. Joshi1, D. Heh, P. D. Kirsch, R. Choi, B. H. Lee, R. Jammy, S. K. Banerjee, and J. C. Lee, discussed at SISC, 2006.
33

International
"NBTI analysis methodology for high-k gate stacks" G.Bersuker, A.Neugroschel, R.Choi, C.Cochrane, P.Lenahan, D.Heh, C.Young, C.Y.Kang, B. H. Lee and R.Jammy, discussed at SISC, 2006.
32

International
"A study of high-k removal by plasma etching and its effect on gate dielectric characterization" B.S.Ju, S.-C. Song, J. Barnett, B. H. Lee, 53rd AVS Symp., 2006.
31

International
"Challenges in dual workfunction metal gate CMOS integration" B. H. Lee,, S.C. Song, M.Hussain, J.Barnett, R. Jammy, ECS Fall meeting, ECS Trans. 3, (2), p.263, 2006 (invited).

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30

International
"Comparison of novel BTI measurements for high-k dielectric MOSFETs" R. Choi, D. Heh, C.Y. Kang, C. Young, G. Bersuker, B. H. Lee, ICSICT, 2006.

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29

International
"Gate stack technology for nano-scale devices" B. H. Lee,, P.Kirsch, S.Song, R.Choi and R.Jammy, Proceedings of IEEE Nanotech. Mat. And Dev. conf., p.206, 2006 (invited).

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28

International
"Characterization of Hf-based Dielectric Thin Films via Synchrotron Radiation and Spallation Neutron Sources" P. S. Lysaght, J. C. Woicik, D. A. Fischer, M. A. Sahiner, M. Hartl, R. Hjelm, S. C. Song, B. H. Lee and R. Jammy, ISAGST, 2006.
27

International
"Fermi-level Pinning and Threshold Voltage Roll-Off Phenomena at Low Effective Oxide Thicknesses for p-MOS Work Function Metal Gates" H.C. Wen, K. Choi, C. S. Park, H. Luan, H. Alshareef, H. R. Harris, H.B. Park, M. Quevedo, G. Bersuker, P. Lysaght, P. Majhi, S.C. Song and B. H. Lee, ISAGST, 2006.
26

International
"Thickness, Morphology and Mobility: A Study of Hf-based Dielectric Performance" G.Pant, M.J.Kim,B.E.Gnade, R.M. Wallace, M.Queveo-Lopez, S. Krishnan, P.D.Kirsch, B. H. Lee and R. Jammy, ISAGST, 2006.
25

International
"A Novel Bias Temperature Instability Characterization Methodology for High-k MOSFETs" D.Heh, G. Bersuker, R.Choi, C.D. Young, and B. H. Lee, Proc. of ESSDERC, p.387-390, 2006.

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24

International
"Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling" M. A. Quevedo-Lopez, P.D. Kirsch, S. Krishnan, J. Barnett, H. N. Alshareef , A. Neugroschel, F.S. Aguirre-Tostado, B. E. Gnade, M. J. Kim, R. M. Wallace and B. H. Lee, Proc. of ESSDERC, 2006.

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23

International
"Effects of Optimization of Gate Edge Profile on sub-45nm Metal Gate High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors Characteristics" C. Y. Kang, R. Choi, S. H. Bae, S. C. Song, M. M. Hussain, C. Young, D. Heh, G. Bersuker and B. H. Lee, Ext. Abs. of SSDM, p.1112, 2006.
22

International
"Demonstration of Low Vt NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack" C. S. Park, S. C. Song, G. Bersuker, H.N. Alshareef, B. S. Ju, P. Majhi, B. H. Lee, R. Jammy, H. K. Park, M. S. Joo, J. Pu, and B. J. Cho, Ext. Abs. of SSDM, p.208, 2006.
21

International
"Compatibility of ALD HfSiON with Dual Metal Gate CMOS Integration" M. M. Hussain, S. C. Song, C. Y. Kang, M. Quevedo-Lopez, H. N. Alshareef, B. Sassman, R. Choi, B. H. Lee, Ext. Abs. of SSDM, p.1114, 2006.
20

International
"Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET" P.D. Kirsch, M.A. Quevedo-Lopez, S. A. Krishnan, C. Krug, F. S. Aguirre, R. M. Wallace, B. H. Lee and R. Jammy, Ext. Abs. of SSDM, p.388, 2006.
19

International
"Strategy to scale Gate stack technology for sub-30nm MOSFETs" B. H. Lee,, P.Kirsch, S.C. Song, R. Jammy, Workshop on gate stack and contact technology for sub-30nm transistor, Monterey, 2006 (invited).
18

International
"Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration" S. C. Song, Z. B. Zhang, M. M. Hussain, C. Huffman, J. Barnett, S. H. Bae, H. J. Li, P. Majhi, C. S. Park, B. S. Ju, , H. K. Park, C. Y. Kang, R. Choi, P. Zeitzoff, H. H. Tseng, B. H. Lee, and R. Jammy, Proc. of symposium on VLSI technology, p.10, 2006.

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17

International
"Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric" H.N. Alshareef , H.R. Harris, H.C. Wen, C.S. Park, C. Huffman, K. Choi, H.F. Luan, P. Majhi, B. H. Lee and R. Jammy, D.J. Lichtenwalner, J.S. Jur, and A. I. Kingon, Proc. of Symp. on VLSI Tech., p.16, 2006.

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16

International
"Process dependent transient charge trapping behaviors in HfSiO dielectric devices" R. Choi, C.Y. Kang, S. Krishnan, G. Bersuker, C. Young, D. Heh, P. Kirsch, and B. H. Lee, Proc. of ALD conference, 2006.
15

International
"Non-planar MOSFETs with Tunable Threshold Voltage (Vt) using ALD High-k/Metal Gate Stack" S.C. Song, M. M. Hussain, B. S. Ju, C. Y. Kang, R. Choi, B. H. Lee, H. H. Tseng, Proc. of ALD conference, 2006.
14

International
"Opportunities and challenges in ALD processing for advanced gate stack applications" R. Jammy, K.Choi, P. Kirsch, and B. H. Lee, Proc. of ALD conference, 2006 (invited).
13

International
"Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility and Vth stability" P.D.Kirwch, M.Quevedo-Lopez, S.A.Krishnan, S.C.Song, R.Choi, P.Majhi, Y.Senzaki, G.Bersuker, B.H.Lee, ECS Trans. 1, p.15, 2006.

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