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Total 28건 1 페이지

2007
28

International
"Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes: Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes" Barnett, C. Y. Kang, P. Lysaght, G. Bersuker, R. Choi, H. K. Park, H. Hwang, B. H. Park, S. Kim, B. H. Lee, SSDM, 2007.
27

International
"PBTI Associated Hot Carrier Characteristics of Nano-scale NMOSFETs with Advanced Gate Stack of Metal Gate/High-k dielectrics" K. T. Lee, C. Y. Kang, R.Choi, S. C. Song, B. H. Lee, O. S. Yoo, H.-D. Lee, Y.-H. Jeong, SISC, 2007.
26

International
"Improved Flash Memory Program and Erase Window with TiO2 Charge Trap Layer and High Temperature Dopant Activation Anneal" Y. N. Tan, C. D. Young, D. Heh, C. Park , P. Sivasubramani, J. Huang, D. C. Gilmer, K. J. Choi, J. Kim, M. J. Kim, P. Majhi, R. Choi, P. D. Kirsch, B. H. Lee, H. H Tseng, R. Jammy, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.
25

International
"Effect of Si cap layer on interface quality and NBTI in Ge-on-si with HfSiO for High Mobility Channel pMOSFETs" O.S. Yoo, J.W. Oh, K.S. Min, C.Y. Kang, K.-T. Lee, M.K. Na, S.C. Song, R. Choi, B. H. Lee e, P. Majhi, H-H Tseng and H.-D. Lee, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.

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24

International
"Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond" P. Sivasubramani, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, R. Harris, S. C. Song, D. Heh, R. Choi, P. Majhi, G. Bersuker, B. H. Lee, H.-H. Tseng, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy, Tech. Dig. of IEDM, 2007.

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23

International
"Mechanism of Vfb roll-off in High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function" S. C. Song, C. S. Park, J. Price, C. Burham, R. Choi, H. H. Tseng, B. H. Lee, and R. Jammy, Tech. Dig. of IEDM, 2007.

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22

International
"Flexible, simplified CMOS on Si(110) with Metal Gate/High-k for HP and LSTP" H. R. Harris, S. E. Thompson, S. Krishnan, P. Kirsch, P. Majhi, C. E. Smith, M. M. Hussain, G. Sung, S. C. Song, R. Choi, H. Adhikari, S. Suthram, B. H. Lee, H. -H. Tseng, R. Jammy, Tech. Dig. of IEDM, 2007.

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21

International
"The effect of high pressure post metallization annealing in dilute oxygen ambient on effective work function of metal gate" J.-M. Lee, H. Park, M. Hasan, M.Jo, M. Chang, R. Choi, B. H. Lee, H. Hwang, SISC, 2007.
20

International
"A Comparative Study of NMOSFETs with HfLaSiON and HfLaON" W.-H.Choi, I.-S. Han, H.-M. Kwon, T.-G. Goo, M.-K. Na, H.-S. Joo, O.-S. Yoo, G-W Lee, C. Y. Kang, R. Choi, S.C. Song, B. H. Lee, R. Jammy, Y.-H. Jeong and H.-D. Lee, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.
19

International
"Band Edge Effective Work Function of Ru Based Metal Gate Electrode for pMOSFET" C. S. Park, S. C. Song, G. Bersuker, H. B. Park, C. Burham, B. H. Lee, and R. Jammy, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.
18

International
"Metal Gate Induced Strain Engineering for High-k/Metal Gate MOSFETs" M. M. Hussain, C. Smith,S. C. Song, B. H. Lee, R. Jammy,, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.
17

International
"Smart” TDDB Algorithm for Investigating Degradation in High-k Gate Dielectric Stacks under Constant Voltage Stress" C. Young, G. Bersuker, J. Tun, R. Choi, D. Heh, and B. H. Lee, 4th Int. Symp. on Adv. Gate Stack Tec, 2007.

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16

International
"Effects of O2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs" K.T. Lee, C.Y. Kang, R. Choi, S.C. Song, B. H. Lee, H.-D. Lee and Y.-H. Jeong, SSDM, 2007.
15

International
"nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2" C. Y. Kang, P. Kirsch, D. Heh, C. Young, P. Sivasubramani, G. Bersuker, S. C. Song, R. Choi, B. H. Lee, J. Lichtenwalner, J. S. Jur, A. I. Kingon, R. Jammy, SSDM, 2007.
14

International
"High and low stress voltage instabilities in high-k gate stacks" G. Bersuker, C. Young, D. Heh, R. Choi, B. H. Lee and R. Jammy, ECS Trans., 2007.

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13

International
"Integration Challenges and Opportunities for Nanometer Scale Dual Metal Gate CMOSFET" S. C. Song, M. Hussain, J. Barnett, C. S. Park, C. Park, P. Kirsch, and B. H. Lee, ECS Trans., 2007.

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12

International
"Electrical Characterization Methodologies for the Assessment of High-k Gate Dielectric Stacks" C.D. Young, G. Bersuker, D. Heh, R. Choi, C.Y. Kang, J. Tun, and B. H. Lee, ECS Trans., 2007.

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11

International
"Determination of Strain in the Silicon Channel Induced by a Metal Electrode" H.C. Floresca, J. Wang, M. Kim, J. Kim, C.Y. Kang, R. Choi, S.C. Song, H.H. Tseng, B. H. Lee, R. Jammy, Microscopy and Microanalysis 2007 Meeting, 2007.

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10

International
"Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme" H. Rusty Harris, P. Kalra, P M.ajhi, M. Hussain, D. Kelly, J. Oh, D. Heh, C. Smith, J. Barnett, P.D. Kirsch, G. Gebara, J. Jur, D. Lichtenwalner, A. Lubow, T.P. Ma, G. Sung, S. Thompson, B. H. Lee, H.-H. Tseng and R. Jammy, Symp. on VLSI Tech, 2007.

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9

International
"Highly Manufacturable MoAlN PMOS Electrode for 32nm Low Standby Power Applications" H.-C. Wen, S.C. Song, C.S. Park, C. Burhamn, G. Bersuker, O. Sharia, A. Demkov, B. S. Ju, M. A. Quevedo-Lopez., H. Niimi, K. Choi, H. B. Park, P. S. Lysaght, P.Majhi, B. H. Lee and R. Jammy, Symp. on VLSI Tech, 2007.
8

International
"Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics" P. Sivasubramani, T. S. Böscke, J. Huang, C. D.Young, P. D. Kirsch, S. A. Krishnan, M. A. Quevedo-Lopez, S. Govindarajan, B. S. Ju, H. R.Harris, D. J. Lichtenwalner, J. S. Jur, A. I. Kingon, J. Kim, B. E. Gnade, R. M. Wallace, G. Bersuker, B. H. Lee, and , Symp. on VLSI Tech, 2007.

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7

International
"Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off" H.-C. Wen, K. Choi, C. S. Park, P. Majhi ,H.R.Harris, H. Niimi, H.B. Park, G.Bersuker, P. Lysaght, D. L. Kwong, S.C. Song,. B. H. Lee and R. Jammy, VLSI-TSA, 2007.

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6

International
"Higher Permittivity rare earth doped HfO2 and ZrO2 dielectrics for logic and memory applications" S.Govindarajan, T.S.Boscke, P.D.Kirsch, M.A.Quevedo-Lopez, P.Sivasubramini, S.C.Song, R.W.Wallace, B.E.Gande, U.Schroeder, R.Ramanathan, B. H. Lee, R.Jammy, VLSI-TSA, 2007.

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5

International
"Effect of in situ plasma treatment on high-k films after high-k removal with plasma etching from the S/D region" B.S.Ju, S.C.Song, T.H.Lee, B.Sassman, C.Y.Kang, B. H. Lee, R.Jammy, IRPS, 2007.

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4

International
"Impact of the bottom interfacial layer on the threshold voltage and device reliability of fluorine incorporated PMOSFET with high-k/metal electrode" K. Choi, T. Lee, S. Kwon, C. D. Young, H. R. Harris, H.C. Wen, M. Q. Lopeza, H. Park, N. Hiro, C. S. Park, R. Choi, S.C. Song, B. H. Lee, and R. Jammy, IRPS, 2007.

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3

International
"Comparison of Plasma-Induced Damage in SiO2/TiN and HfO2/TiN Gate Stacks" C.D. Young, G. Bersuker, F. Zhua, K. Matthews, R. Choi, S.C. Song, H.K. Park, J.C. Lee and B. H. Lee, IRPS, 2007.

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2

International
"Test Structures for Accurate UHF C-V measurement for Nano-Scale CMOSFETs with HfSiON and TiN Tetal Gate" K.T. Lee, G.A. Brown, H. Dawei, R. Choi, S.C. Song, B. H. Lee, O.S. Yoo, H.D Lee and Y-H Jeong, ICMTS, 2007.

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1

International
"Process challenges for future gate stack technology" B. H. Lee, B.S Ju, S.C. Song, M. Hussain, J. Barnett, nd R. Jammy, Semi. Tec. Symposium, 2007.

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