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Total 473건 10 페이지

2007
203

International
"Effect of Si cap layer on interface quality and NBTI in Ge-on-si with HfSiO for High Mobility Channel pMOSFETs" O.S. Yoo, J.W. Oh, K.S. Min, C.Y. Kang, K.-T. Lee, M.K. Na, S.C. Song, R. Choi, B. H. Lee e, P. Majhi, H-H Tseng and H.-D. Lee, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.

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202

International
"Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond" P. Sivasubramani, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, R. Harris, S. C. Song, D. Heh, R. Choi, P. Majhi, G. Bersuker, B. H. Lee, H.-H. Tseng, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy, Tech. Dig. of IEDM, 2007.

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201

International
"Mechanism of Vfb roll-off in High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function" S. C. Song, C. S. Park, J. Price, C. Burham, R. Choi, H. H. Tseng, B. H. Lee, and R. Jammy, Tech. Dig. of IEDM, 2007.

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200

International
"Flexible, simplified CMOS on Si(110) with Metal Gate/High-k for HP and LSTP" H. R. Harris, S. E. Thompson, S. Krishnan, P. Kirsch, P. Majhi, C. E. Smith, M. M. Hussain, G. Sung, S. C. Song, R. Choi, H. Adhikari, S. Suthram, B. H. Lee, H. -H. Tseng, R. Jammy, Tech. Dig. of IEDM, 2007.

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199

International
"The effect of high pressure post metallization annealing in dilute oxygen ambient on effective work function of metal gate" J.-M. Lee, H. Park, M. Hasan, M.Jo, M. Chang, R. Choi, B. H. Lee, H. Hwang, SISC, 2007.
198

International
"A Comparative Study of NMOSFETs with HfLaSiON and HfLaON" W.-H.Choi, I.-S. Han, H.-M. Kwon, T.-G. Goo, M.-K. Na, H.-S. Joo, O.-S. Yoo, G-W Lee, C. Y. Kang, R. Choi, S.C. Song, B. H. Lee, R. Jammy, Y.-H. Jeong and H.-D. Lee, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.
197

International
"Band Edge Effective Work Function of Ru Based Metal Gate Electrode for pMOSFET" C. S. Park, S. C. Song, G. Bersuker, H. B. Park, C. Burham, B. H. Lee, and R. Jammy, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.
196

International
"Metal Gate Induced Strain Engineering for High-k/Metal Gate MOSFETs" M. M. Hussain, C. Smith,S. C. Song, B. H. Lee, R. Jammy,, 4th Int. Symp. on Adv. Gate Stack Tech., 2007.
195

International
"Smart” TDDB Algorithm for Investigating Degradation in High-k Gate Dielectric Stacks under Constant Voltage Stress" C. Young, G. Bersuker, J. Tun, R. Choi, D. Heh, and B. H. Lee, 4th Int. Symp. on Adv. Gate Stack Tec, 2007.

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194

International
"Effects of O2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs" K.T. Lee, C.Y. Kang, R. Choi, S.C. Song, B. H. Lee, H.-D. Lee and Y.-H. Jeong, SSDM, 2007.
193

International
"nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2" C. Y. Kang, P. Kirsch, D. Heh, C. Young, P. Sivasubramani, G. Bersuker, S. C. Song, R. Choi, B. H. Lee, J. Lichtenwalner, J. S. Jur, A. I. Kingon, R. Jammy, SSDM, 2007.
192

International
"High and low stress voltage instabilities in high-k gate stacks" G. Bersuker, C. Young, D. Heh, R. Choi, B. H. Lee and R. Jammy, ECS Trans., 2007.

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191

International
"Integration Challenges and Opportunities for Nanometer Scale Dual Metal Gate CMOSFET" S. C. Song, M. Hussain, J. Barnett, C. S. Park, C. Park, P. Kirsch, and B. H. Lee, ECS Trans., 2007.

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190

International
"Electrical Characterization Methodologies for the Assessment of High-k Gate Dielectric Stacks" C.D. Young, G. Bersuker, D. Heh, R. Choi, C.Y. Kang, J. Tun, and B. H. Lee, ECS Trans., 2007.

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189

International
"Determination of Strain in the Silicon Channel Induced by a Metal Electrode" H.C. Floresca, J. Wang, M. Kim, J. Kim, C.Y. Kang, R. Choi, S.C. Song, H.H. Tseng, B. H. Lee, R. Jammy, Microscopy and Microanalysis 2007 Meeting, 2007.

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188

International
"Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme" H. Rusty Harris, P. Kalra, P M.ajhi, M. Hussain, D. Kelly, J. Oh, D. Heh, C. Smith, J. Barnett, P.D. Kirsch, G. Gebara, J. Jur, D. Lichtenwalner, A. Lubow, T.P. Ma, G. Sung, S. Thompson, B. H. Lee, H.-H. Tseng and R. Jammy, Symp. on VLSI Tech, 2007.

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187

International
"Highly Manufacturable MoAlN PMOS Electrode for 32nm Low Standby Power Applications" H.-C. Wen, S.C. Song, C.S. Park, C. Burhamn, G. Bersuker, O. Sharia, A. Demkov, B. S. Ju, M. A. Quevedo-Lopez., H. Niimi, K. Choi, H. B. Park, P. S. Lysaght, P.Majhi, B. H. Lee and R. Jammy, Symp. on VLSI Tech, 2007.
186

International
"Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics" P. Sivasubramani, T. S. Böscke, J. Huang, C. D.Young, P. D. Kirsch, S. A. Krishnan, M. A. Quevedo-Lopez, S. Govindarajan, B. S. Ju, H. R.Harris, D. J. Lichtenwalner, J. S. Jur, A. I. Kingon, J. Kim, B. E. Gnade, R. M. Wallace, G. Bersuker, B. H. Lee, and , Symp. on VLSI Tech, 2007.

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185

International
"Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off" H.-C. Wen, K. Choi, C. S. Park, P. Majhi ,H.R.Harris, H. Niimi, H.B. Park, G.Bersuker, P. Lysaght, D. L. Kwong, S.C. Song,. B. H. Lee and R. Jammy, VLSI-TSA, 2007.

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184

International
"Higher Permittivity rare earth doped HfO2 and ZrO2 dielectrics for logic and memory applications" S.Govindarajan, T.S.Boscke, P.D.Kirsch, M.A.Quevedo-Lopez, P.Sivasubramini, S.C.Song, R.W.Wallace, B.E.Gande, U.Schroeder, R.Ramanathan, B. H. Lee, R.Jammy, VLSI-TSA, 2007.

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183

International
"Effect of in situ plasma treatment on high-k films after high-k removal with plasma etching from the S/D region" B.S.Ju, S.C.Song, T.H.Lee, B.Sassman, C.Y.Kang, B. H. Lee, R.Jammy, IRPS, 2007.

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182

International
"Impact of the bottom interfacial layer on the threshold voltage and device reliability of fluorine incorporated PMOSFET with high-k/metal electrode" K. Choi, T. Lee, S. Kwon, C. D. Young, H. R. Harris, H.C. Wen, M. Q. Lopeza, H. Park, N. Hiro, C. S. Park, R. Choi, S.C. Song, B. H. Lee, and R. Jammy, IRPS, 2007.

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181

International
"Comparison of Plasma-Induced Damage in SiO2/TiN and HfO2/TiN Gate Stacks" C.D. Young, G. Bersuker, F. Zhua, K. Matthews, R. Choi, S.C. Song, H.K. Park, J.C. Lee and B. H. Lee, IRPS, 2007.

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180

International
"Test Structures for Accurate UHF C-V measurement for Nano-Scale CMOSFETs with HfSiON and TiN Tetal Gate" K.T. Lee, G.A. Brown, H. Dawei, R. Choi, S.C. Song, B. H. Lee, O.S. Yoo, H.D Lee and Y-H Jeong, ICMTS, 2007.

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179

International
"Process challenges for future gate stack technology" B. H. Lee, B.S Ju, S.C. Song, M. Hussain, J. Barnett, nd R. Jammy, Semi. Tec. Symposium, 2007.
2006
178

International
"Advances and Challenges in Gate Stack Technology for nano scale CMOS Devices" B. H. Lee,, H.C.Wen, S. Song, R.Choi, P. Kirsch, P. Majhi and R. Jammy, Int. Conf. on Microelectronics, 2006.
177

International
"Tetragonal Phase Stabilization by Doping as Enabler of Highly Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM" T. S. Böscke, S. Govindarajan, C. Fachmann, J. Heitmann, A. Avellán, U. Schröder, S. Kudelka,P. D. Kirsch, C. Krug, P.Y. Hung, S.C. Song, B.S. Ju, J. Price, G. Pant, B. E. Gnade, W. Krautschneider, B. H. Lee and R. Jammy, Tech. Dig. of IEDM, 2006.

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176

International
"A novel in situ plasma treatment for damage-free metal/high-k gate stack RIE proces" B.S.Ju, S.C.Song, T.H.Lee, B.Sassman, C.Y.Kang, B. H. Lee, R.Jammy, IEDM, 2006.

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175

International
"Simplified manufacturable band edge metal gate solution for NMOS without a capping layer" H. R.Harris, H. Alshareef, H.C. Wen, S. Krishnan, K. Choi, H. Luan, D. Heh, C.S. Park, H.B. Park, M. Hussain, B.S. Ju, P.D. Kirsch, S.C. Song, P. Majhi, B. H. Lee, R. Jammy, IEDM, 2006.

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174

International
"An accurate lifetime analysis methodology incorporating governing NBTI mechanisms in high-k/SiO2 gate stacks" A. Neugroschel, G. Bersuker, R. Choi, C. Cochrane, P. Lenahan, D. Heh, C. Young, C.Y. Kang, B. H. Lee, R. Jammy, IEDM, 2006.

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