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Total 486건
10 페이지
게시판 검색
2008
216
International
"Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable Sub-1nm EOT"
J. Huang, P.D. Kirsch, J. Oh, S.H. Lee, J. Price, P. Majhi, H.R. Harris, D.C. Gilmer, D.Q. Kelly, P. Sivasubramani, G. Bersuker, D. Heh, C. Young, C.S. Park, Y.N. Tan, N. Goel, C. Park, P.Y. Hung, P. Lysaght, K.J. Choi, B.J. Cho, H.-H. Tseng, B.H. Lee, R.,
Proc. Of Symp. On VLSI Technology, p.92,
2008.
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215
International
"The Effects Of Ge Composition And Si Cap Thickness On Hot Carrier Reliability Of Si/Si1-XGex/Si P-MOSFETS With High-K/Metal Gate"
W.-Y. Loh, P. Majhi, S.-H. Lee, J.-W. Oh, B. Sassman, C. Young, G. Bersuker, B.-J. Cho, C.-S. Park, C.-Y. Kang, P. Kirsch, B.-H. Lee, H.R. Harris, H.-H. Tseng, R. Jammy,
Proc. Of Symp. On VLSI Technology, p.56,
2008.
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214
International
"A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain"
K.T. Lee, C.Y. Kang, O.S. Yoo, C.D. Young, G. Bersuker, B.H. Lee, H.-D. Lee, Y.-H. Jeong,
Proc. of IRPS,
2008.
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213
International
"Performance and Reliability characterization of the band edge high-k.metal gate MOSFETs withal-doped Hf-silicate gate dielectrics"
C.Y. Kang, C.S. Park, D. Heh, C. Young, P. Kirsch, H.B. Park, G. Bersuker, J.-W.Yang, B.H. Lee. J.S.Jur, A.I. Kingon, R.Jammy,
Proc. of Int. Rel. Phys. Symp.,
2008.
212
International
"Plasma induced damage of aggressively scaled gate dielectric (EOT < 1.0 nm) in metal gate/high-k dielectric CMOSFETs"
K.S. Min, C.Y. Kang, O.S. Yoo, B.J. Park, S.W. Kim, C.D. Young, D. Heh, G. Bersuker, B.H. Lee, G.Y. Yeom,
Proc. of IRPS,
2008.
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211
International
"New hot-carrier degradation phenomenon in nano-scale floating body MOSFETs"
J.-W. Yang, H.R.Harris, C.Y. Kang, C.D. Young, K.T. Lee, H.D. Lee, G. Bersuker, B.H. Lee, H.-H. Tseng, R. Jammy,
Proc. of Int. Rel. Phys. Symp.,
2008.
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210
International
"Achieving Low Vt <-0.3V and Thin EOT ~1.0nm in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications"
C. S. Park, G. Bersuker, S. C. Song, H. B. Park, C. Burham, B. S. Ju, C. Park, P. Kirsch, B. H. Lee and R. Jammy,
Proc. of VLSI-TSA,
2008.
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209
International
"Physical Characteristics of HfO2 Dielectrics at the Physical Scaling Limit"
P. S. Lysaght, J. C. Woicik, M. A. Sahiner, P. D. Kirsch, G. Bersuker, B.-H. Lee and R. Jammy,
Proc. of VLSI-TSA,
2008.
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208
International
"Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs"
J. Huang, P. D. Kirsch, M. Hussain, D. Heh, P. Sivasubramani, C. Young, D. C. Gilmer, C.S. Park, Y. N. Tan, C. Park, H.R. Harris, P. Majhi, G. Bersuker, B .H. Lee, H.-H. Tseng and R. Jammy,
Proc. of VLSI-TSA,
2008.
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207
International
"Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance"
Y. N. Tan, H. C. Wen, C. Park, D. C. Gilmer, C. D. Young, D. Heh, P. Sivasubramani, J. Huang, P. Majhi, P. D. Kirsch, B. H. Lee, H. H. Tseng and R. Jammy,
Proc. of VLSI-TSA,
2008.
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2007
206
International
"Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes: Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes"
Barnett, C. Y. Kang, P. Lysaght, G. Bersuker, R. Choi, H. K. Park, H. Hwang, B. H. Park, S. Kim, B. H. Lee,
SSDM,
2007.
205
International
"PBTI Associated Hot Carrier Characteristics of Nano-scale NMOSFETs with Advanced Gate Stack of Metal Gate/High-k dielectrics"
K. T. Lee, C. Y. Kang, R.Choi, S. C. Song, B. H. Lee, O. S. Yoo, H.-D. Lee, Y.-H. Jeong,
SISC,
2007.
204
International
"Improved Flash Memory Program and Erase Window with TiO2 Charge Trap Layer and High Temperature Dopant Activation Anneal"
Y. N. Tan, C. D. Young, D. Heh, C. Park , P. Sivasubramani, J. Huang, D. C. Gilmer, K. J. Choi, J. Kim, M. J. Kim, P. Majhi, R. Choi, P. D. Kirsch, B. H. Lee, H. H Tseng, R. Jammy,
4th Int. Symp. on Adv. Gate Stack Tech.,
2007.
203
International
"Effect of Si cap layer on interface quality and NBTI in Ge-on-si with HfSiO for High Mobility Channel pMOSFETs"
O.S. Yoo, J.W. Oh, K.S. Min, C.Y. Kang, K.-T. Lee, M.K. Na, S.C. Song, R. Choi, B. H. Lee e, P. Majhi, H-H Tseng and H.-D. Lee,
4th Int. Symp. on Adv. Gate Stack Tech.,
2007.
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202
International
"Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond"
P. Sivasubramani, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, R. Harris, S. C. Song, D. Heh, R. Choi, P. Majhi, G. Bersuker, B. H. Lee, H.-H. Tseng, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy,
Tech. Dig. of IEDM,
2007.
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201
International
"Mechanism of Vfb roll-off in High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function"
S. C. Song, C. S. Park, J. Price, C. Burham, R. Choi, H. H. Tseng, B. H. Lee, and R. Jammy,
Tech. Dig. of IEDM,
2007.
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200
International
"Flexible, simplified CMOS on Si(110) with Metal Gate/High-k for HP and LSTP"
H. R. Harris, S. E. Thompson, S. Krishnan, P. Kirsch, P. Majhi, C. E. Smith, M. M. Hussain, G. Sung, S. C. Song, R. Choi, H. Adhikari, S. Suthram, B. H. Lee, H. -H. Tseng, R. Jammy,
Tech. Dig. of IEDM,
2007.
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199
International
"The effect of high pressure post metallization annealing in dilute oxygen ambient on effective work function of metal gate"
J.-M. Lee, H. Park, M. Hasan, M.Jo, M. Chang, R. Choi, B. H. Lee, H. Hwang,
SISC,
2007.
198
International
"A Comparative Study of NMOSFETs with HfLaSiON and HfLaON"
W.-H.Choi, I.-S. Han, H.-M. Kwon, T.-G. Goo, M.-K. Na, H.-S. Joo, O.-S. Yoo, G-W Lee, C. Y. Kang, R. Choi, S.C. Song, B. H. Lee, R. Jammy, Y.-H. Jeong and H.-D. Lee,
4th Int. Symp. on Adv. Gate Stack Tech.,
2007.
197
International
"Band Edge Effective Work Function of Ru Based Metal Gate Electrode for pMOSFET"
C. S. Park, S. C. Song, G. Bersuker, H. B. Park, C. Burham, B. H. Lee, and R. Jammy,
4th Int. Symp. on Adv. Gate Stack Tech.,
2007.
196
International
"Metal Gate Induced Strain Engineering for High-k/Metal Gate MOSFETs"
M. M. Hussain, C. Smith,S. C. Song, B. H. Lee, R. Jammy,,
4th Int. Symp. on Adv. Gate Stack Tech.,
2007.
195
International
"Smart” TDDB Algorithm for Investigating Degradation in High-k Gate Dielectric Stacks under Constant Voltage Stress"
C. Young, G. Bersuker, J. Tun, R. Choi, D. Heh, and B. H. Lee,
4th Int. Symp. on Adv. Gate Stack Tec,
2007.
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194
International
"Effects of O2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs"
K.T. Lee, C.Y. Kang, R. Choi, S.C. Song, B. H. Lee, H.-D. Lee and Y.-H. Jeong,
SSDM,
2007.
193
International
"nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2"
C. Y. Kang, P. Kirsch, D. Heh, C. Young, P. Sivasubramani, G. Bersuker, S. C. Song, R. Choi, B. H. Lee, J. Lichtenwalner, J. S. Jur, A. I. Kingon, R. Jammy,
SSDM,
2007.
192
International
"High and low stress voltage instabilities in high-k gate stacks"
G. Bersuker, C. Young, D. Heh, R. Choi, B. H. Lee and R. Jammy,
ECS Trans.,
2007.
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191
International
"Integration Challenges and Opportunities for Nanometer Scale Dual Metal Gate CMOSFET"
S. C. Song, M. Hussain, J. Barnett, C. S. Park, C. Park, P. Kirsch, and B. H. Lee,
ECS Trans.,
2007.
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190
International
"Electrical Characterization Methodologies for the Assessment of High-k Gate Dielectric Stacks"
C.D. Young, G. Bersuker, D. Heh, R. Choi, C.Y. Kang, J. Tun, and B. H. Lee,
ECS Trans.,
2007.
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189
International
"Determination of Strain in the Silicon Channel Induced by a Metal Electrode"
H.C. Floresca, J. Wang, M. Kim, J. Kim, C.Y. Kang, R. Choi, S.C. Song, H.H. Tseng, B. H. Lee, R. Jammy,
Microscopy and Microanalysis 2007 Meeting,
2007.
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188
International
"Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme"
H. Rusty Harris, P. Kalra, P M.ajhi, M. Hussain, D. Kelly, J. Oh, D. Heh, C. Smith, J. Barnett, P.D. Kirsch, G. Gebara, J. Jur, D. Lichtenwalner, A. Lubow, T.P. Ma, G. Sung, S. Thompson, B. H. Lee, H.-H. Tseng and R. Jammy,
Symp. on VLSI Tech,
2007.
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187
International
"Highly Manufacturable MoAlN PMOS Electrode for 32nm Low Standby Power Applications"
H.-C. Wen, S.C. Song, C.S. Park, C. Burhamn, G. Bersuker, O. Sharia, A. Demkov, B. S. Ju, M. A. Quevedo-Lopez., H. Niimi, K. Choi, H. B. Park, P. S. Lysaght, P.Majhi, B. H. Lee and R. Jammy,
Symp. on VLSI Tech,
2007.
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