Conferences 11 페이지 | 포항공대 EESL

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Total 473건 11 페이지

2006
173

International
"Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability" P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B. H. Lee, J.G. Wang, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, an, Tech. Dig. of IEDM, 2006.

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172

International
"Performance Enhancement of pMOSFETs with Optimized HfO2/TiN Gate Stack on Si(110) Substrates" S.A. Krishnan, R. Harris, P.D. Kirsch, C. Krug, M. Quevedo, C.Young, B. H. Lee, R. Choi, N. Chowdhury, S. Thomson, G. Bersuker, and R. Jammy, Tech. Dig. of IEDM, 2006.
171

International
"A novel electrode induced strain engineering for High performance SOI finFET utilizing Si(110) channel for both nMOS and pMOS" C.Y. Kang, R. Choi, S. C. Song, K. Choi, B. S. Ju, M. M. Hussain, B. H. Lee, G. Bersuker, C. Young, D. Heh, P. Kirsch, J. Barnet, J-W. Yang, P. Zeitzoff, H-H Tseng, R. Jammy, Tech. Dig. of IEDM, 2006.

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170

International
"Improved passivation and characterization of the Ge/HfSiO interface enabling surface channel Ge pFETs" H. J. Na, C. Krug, S. Joshi1, D. Heh, P. D. Kirsch, R. Choi, B. H. Lee, R. Jammy, S. K. Banerjee, and J. C. Lee, discussed at SISC, 2006.
169

International
"NBTI analysis methodology for high-k gate stacks" G.Bersuker, A.Neugroschel, R.Choi, C.Cochrane, P.Lenahan, D.Heh, C.Young, C.Y.Kang, B. H. Lee and R.Jammy, discussed at SISC, 2006.
168

International
"A study of high-k removal by plasma etching and its effect on gate dielectric characterization" B.S.Ju, S.-C. Song, J. Barnett, B. H. Lee, 53rd AVS Symp., 2006.
167

International
"Challenges in dual workfunction metal gate CMOS integration" B. H. Lee,, S.C. Song, M.Hussain, J.Barnett, R. Jammy, ECS Fall meeting, ECS Trans. 3, (2), p.263, 2006 (invited).

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166

International
"Comparison of novel BTI measurements for high-k dielectric MOSFETs" R. Choi, D. Heh, C.Y. Kang, C. Young, G. Bersuker, B. H. Lee, ICSICT, 2006.

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165

International
"Gate stack technology for nano-scale devices" B. H. Lee,, P.Kirsch, S.Song, R.Choi and R.Jammy, Proceedings of IEEE Nanotech. Mat. And Dev. conf., p.206, 2006 (invited).

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164

International
"Characterization of Hf-based Dielectric Thin Films via Synchrotron Radiation and Spallation Neutron Sources" P. S. Lysaght, J. C. Woicik, D. A. Fischer, M. A. Sahiner, M. Hartl, R. Hjelm, S. C. Song, B. H. Lee and R. Jammy, ISAGST, 2006.
163

International
"Fermi-level Pinning and Threshold Voltage Roll-Off Phenomena at Low Effective Oxide Thicknesses for p-MOS Work Function Metal Gates" H.C. Wen, K. Choi, C. S. Park, H. Luan, H. Alshareef, H. R. Harris, H.B. Park, M. Quevedo, G. Bersuker, P. Lysaght, P. Majhi, S.C. Song and B. H. Lee, ISAGST, 2006.
162

International
"Thickness, Morphology and Mobility: A Study of Hf-based Dielectric Performance" G.Pant, M.J.Kim,B.E.Gnade, R.M. Wallace, M.Queveo-Lopez, S. Krishnan, P.D.Kirsch, B. H. Lee and R. Jammy, ISAGST, 2006.
161

International
"A Novel Bias Temperature Instability Characterization Methodology for High-k MOSFETs" D.Heh, G. Bersuker, R.Choi, C.D. Young, and B. H. Lee, Proc. of ESSDERC, p.387-390, 2006.

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160

International
"Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling" M. A. Quevedo-Lopez, P.D. Kirsch, S. Krishnan, J. Barnett, H. N. Alshareef , A. Neugroschel, F.S. Aguirre-Tostado, B. E. Gnade, M. J. Kim, R. M. Wallace and B. H. Lee, Proc. of ESSDERC, 2006.

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159

International
"Effects of Optimization of Gate Edge Profile on sub-45nm Metal Gate High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors Characteristics" C. Y. Kang, R. Choi, S. H. Bae, S. C. Song, M. M. Hussain, C. Young, D. Heh, G. Bersuker and B. H. Lee, Ext. Abs. of SSDM, p.1112, 2006.
158

International
"Demonstration of Low Vt NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack" C. S. Park, S. C. Song, G. Bersuker, H.N. Alshareef, B. S. Ju, P. Majhi, B. H. Lee, R. Jammy, H. K. Park, M. S. Joo, J. Pu, and B. J. Cho, Ext. Abs. of SSDM, p.208, 2006.
157

International
"Compatibility of ALD HfSiON with Dual Metal Gate CMOS Integration" M. M. Hussain, S. C. Song, C. Y. Kang, M. Quevedo-Lopez, H. N. Alshareef, B. Sassman, R. Choi, B. H. Lee, Ext. Abs. of SSDM, p.1114, 2006.
156

International
"Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET" P.D. Kirsch, M.A. Quevedo-Lopez, S. A. Krishnan, C. Krug, F. S. Aguirre, R. M. Wallace, B. H. Lee and R. Jammy, Ext. Abs. of SSDM, p.388, 2006.
155

International
"Strategy to scale Gate stack technology for sub-30nm MOSFETs" B. H. Lee,, P.Kirsch, S.C. Song, R. Jammy, Workshop on gate stack and contact technology for sub-30nm transistor, Monterey, 2006 (invited).
154

International
"Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration" S. C. Song, Z. B. Zhang, M. M. Hussain, C. Huffman, J. Barnett, S. H. Bae, H. J. Li, P. Majhi, C. S. Park, B. S. Ju, , H. K. Park, C. Y. Kang, R. Choi, P. Zeitzoff, H. H. Tseng, B. H. Lee, and R. Jammy, Proc. of symposium on VLSI technology, p.10, 2006.

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153

International
"Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric" H.N. Alshareef , H.R. Harris, H.C. Wen, C.S. Park, C. Huffman, K. Choi, H.F. Luan, P. Majhi, B. H. Lee and R. Jammy, D.J. Lichtenwalner, J.S. Jur, and A. I. Kingon, Proc. of Symp. on VLSI Tech., p.16, 2006.

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152

International
"Process dependent transient charge trapping behaviors in HfSiO dielectric devices" R. Choi, C.Y. Kang, S. Krishnan, G. Bersuker, C. Young, D. Heh, P. Kirsch, and B. H. Lee, Proc. of ALD conference, 2006.
151

International
"Non-planar MOSFETs with Tunable Threshold Voltage (Vt) using ALD High-k/Metal Gate Stack" S.C. Song, M. M. Hussain, B. S. Ju, C. Y. Kang, R. Choi, B. H. Lee, H. H. Tseng, Proc. of ALD conference, 2006.
150

International
"Opportunities and challenges in ALD processing for advanced gate stack applications" R. Jammy, K.Choi, P. Kirsch, and B. H. Lee, Proc. of ALD conference, 2006 (invited).
149

International
"Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility and Vth stability" P.D.Kirwch, M.Quevedo-Lopez, S.A.Krishnan, S.C.Song, R.Choi, P.Majhi, Y.Senzaki, G.Bersuker, B.H.Lee, ECS Trans. 1, p.15, 2006.

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148

International
"Charge trapping effects in high-k transistors" G. Bersuker, C.S.park, J.Sim, C.Young, R.Choi, B.H.Lee, ECS Trans. 1, p.663, 2006.

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147

International
"The influence of NH3 anneal on the crystallization kinectics of HfO2 gate dielectric films" P.S.Lysaght, J.C.Woicik, B.Foran, J.Barnett, G. Bersuker, B.H.Lee, ECS Trans. 1, p.313, 2006.

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146

International
"Low Work-Function TaN-metal gate with Gadolinium Oxide Buffer Layer on Hf-based Dielectrics" G. Thareja, S. J. Rhee, H.-C. Wen, R. Harris, P. Majhi, B. H. Lee and J. C. Lee, Proc. of DRC, 2006.

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145

International
"Relationship of HfO2 Materials Properties and Transistor Performance" P. D. Kirsch, M. A. Quevedo, G. Pante, S. Krishnan, S. C. Song, H. J. Li, J. J. Peterson, B. H. Lee, R. W. Wallace and B. E. Gnade, VLSI-TSA, 2006.

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144

International
"Electron Trapping Processes in High-k Gate Dielectrics and Nature of Traps" G. Bersuker, J. Sim, C. S. Park, C. Young, S. Nadkarni, J. Gavartin, A. Shluger, R. Choi, B. H. Lee, VLSI-TSA, 2006.

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