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Total 529건
11 페이지
게시판 검색
2009
229
International
"Dipole model explaining high-k/metal gate field transistor threshold voltage tuning"
P.D.Kirsch, P.Sivasubramani, J. Huang, C.D.Young, M. A. Quevedo-Lopoez, H. C.Wen, H. Alshareef, K. choi, C.S.Park, K.Freeman, M.M.Hussain, G.Bersuker, H.R.Harris, P. Majhi, R.Choi, P. Lysaght, B.H.Lee, H.-H Tseng, R.Jammy, T. S. Boscke, D. J. Lichtenwalne,
Electrochem. Soc. Transaction, 19(1), p.269,
2009, Invited.
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228
International
"Dielectric Breakdown Characteristics of Stacked High-k Dielectrics"
B.H.Lee, R.Choi,
Electrochem. Soc. Transaction (ECS), San Francisco, 19(2), p.289,
2009, Invited.
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227
International
"Reliability characterization methods for MOSFETs with metal electrode/high-k dielectric stack"
B.H.Lee,
Proc. of ICICDT,
2009.
226
International
"Exploratory NEMS-CMOS Hybrid Devices for Post CMOS era"
B.H.Lee,
Proc. of ISTC, Electrochem. Soc. Transaction, 18(1), p.857,
2009, Invited.
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2008
225
International
"Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application"
J. Huang, P.D. Kirsch, D. Heh, C.Y. Kang, G. Bersuker, M. Hussain, P. Majhi, P. Sivasubramani, D.C. Gilmer, N. Goel, M.A. Quevedo-Lopez, C. Young, C.S. Park, C. Park, P. Y. Hung, J. Price, H.R. Harris, B .H. Lee, H.-H. Tseng, R. Jammy,
Proc. of Int. Electron Device Meeting, p.45,
2008.
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224
International
"A Comprehensive and Comparative Study of Interface and Bulk Characteristics of nMOSETs with La-Incorporated High-k Dielectrics"
W.-H. Choi, H.-M. Kwon*, I.-S. Han*, T.-G. Goo*, M.-K. Na*, C.Y. Kang, G. Bersuker, B.H. Lee, Y.H. Jeong, H.-D. Lee, R. Jammy,
Proc. of Int. Electron Device Meeting, p.111,
2008.
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223
International
"Breakdown in the metal/high-k gate stack: Identifying the “weak link" in the multilayer dielectric"
G. Bersuker, D. Heh, C. Young, H. Park, P. Khanal, L. Larcher, A. Padovani, P. Lenahan, J. Ryan, B. H. Lee, H. Tseng, R. Jammy,
Proc. of Int. Electron Device Meeting, p.791,
2008.
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222
International
"The Impact of La-Doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs under Various Gate Stress Conditions"
C.Y. Kang, C.D. Young, J. Huang, P. Kirsch, D. Heh, P. Sivasubramani, H.K. Park, G. Bersuker, B.H. Lee, H.S. Choi, K.T. Lee, Y-H. Jeong, J. Lichtenwalner, A.I. Kingon, H-H Tseng, R. Jammy,
Proc. of Int. Electron Device Meeting, p.115,
2008.
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221
International
"Gate stack technology for nano-scale CMOS devices"
B.H.Lee, C.S. Park, P. Kirsch, J. Huang, P. Sivasubramani, C.Burham, D.Gilmer, C.Y.Kang, P.Lysaght, G.Bersuker, P.Majhi, R.Harris, H.Tseng and R.Jammy,
Int. MRS, Chongging, China,
2008, Invited.
220
International
"Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric"
C.Y. Kang, C.S.Park, H.K.Park, S.C.Song, .R.Choi, B.H.Park, B.Woo, K.T.Lee, J.Lee, H.Hwang, G.Bersuker, B.H.Lee, H.H.Tseng, R.Jammy,
Ext. Abs. of Symp. On Solid State Device and Materials, p.22,
2008.
219
International
"Comparison of PECVD and RTCVD CESL Nitride stressor in reliability and performance improvement for high-k/metal gate CMOSFETs"
K.T.Lee, C.Y.Kang, S.H.Hong, H.S.Choi, G.B.Choi, J.C.Kim, S.H.Song, R.H.Baek, M.S..Park, S.H..Sagong, S.W.Jung, H.K.Park, H.S.Hwang, B.H.Lee, Y.H.Jeong,
Ext. Abs. of Symp. On Solid State Device and Materials, p.362,
2008.
218
International
"Gate stack technology for nano-scale CMOS devices"
B.H.Lee, C.S. Park, P. Kirsch, J. Huang, P. Sivasubramani, C.Burham, D.Gilmer, C.Y.Kang, P.Lysaght, G.Bersuker, P.Majhi, R.Harris, H.Tseng and R.Jammy,
IWDTF, Tokyo. Japan,
2008, Invited.
217
International
"Reliability characterization of metal electrode/high-k dielectric stacks for 45nm node beyond"
B.H.Lee, G. Bersuker, D. Heh, H. Park, C.Y. Kang, C. Young, H. Tseng,
Proc. of IWDTF, Tokyo. Japan,
2008, Invited.
216
International
"Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable Sub-1nm EOT"
J. Huang, P.D. Kirsch, J. Oh, S.H. Lee, J. Price, P. Majhi, H.R. Harris, D.C. Gilmer, D.Q. Kelly, P. Sivasubramani, G. Bersuker, D. Heh, C. Young, C.S. Park, Y.N. Tan, N. Goel, C. Park, P.Y. Hung, P. Lysaght, K.J. Choi, B.J. Cho, H.-H. Tseng, B.H. Lee, R.,
Proc. Of Symp. On VLSI Technology, p.92,
2008.
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215
International
"The Effects Of Ge Composition And Si Cap Thickness On Hot Carrier Reliability Of Si/Si1-XGex/Si P-MOSFETS With High-K/Metal Gate"
W.-Y. Loh, P. Majhi, S.-H. Lee, J.-W. Oh, B. Sassman, C. Young, G. Bersuker, B.-J. Cho, C.-S. Park, C.-Y. Kang, P. Kirsch, B.-H. Lee, H.R. Harris, H.-H. Tseng, R. Jammy,
Proc. Of Symp. On VLSI Technology, p.56,
2008.
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214
International
"A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain"
K.T. Lee, C.Y. Kang, O.S. Yoo, C.D. Young, G. Bersuker, B.H. Lee, H.-D. Lee, Y.-H. Jeong,
Proc. of IRPS,
2008.
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213
International
"Performance and Reliability characterization of the band edge high-k.metal gate MOSFETs withal-doped Hf-silicate gate dielectrics"
C.Y. Kang, C.S. Park, D. Heh, C. Young, P. Kirsch, H.B. Park, G. Bersuker, J.-W.Yang, B.H. Lee. J.S.Jur, A.I. Kingon, R.Jammy,
Proc. of Int. Rel. Phys. Symp.,
2008.
212
International
"Plasma induced damage of aggressively scaled gate dielectric (EOT < 1.0 nm) in metal gate/high-k dielectric CMOSFETs"
K.S. Min, C.Y. Kang, O.S. Yoo, B.J. Park, S.W. Kim, C.D. Young, D. Heh, G. Bersuker, B.H. Lee, G.Y. Yeom,
Proc. of IRPS,
2008.
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211
International
"New hot-carrier degradation phenomenon in nano-scale floating body MOSFETs"
J.-W. Yang, H.R.Harris, C.Y. Kang, C.D. Young, K.T. Lee, H.D. Lee, G. Bersuker, B.H. Lee, H.-H. Tseng, R. Jammy,
Proc. of Int. Rel. Phys. Symp.,
2008.
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210
International
"Achieving Low Vt <-0.3V and Thin EOT ~1.0nm in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications"
C. S. Park, G. Bersuker, S. C. Song, H. B. Park, C. Burham, B. S. Ju, C. Park, P. Kirsch, B. H. Lee and R. Jammy,
Proc. of VLSI-TSA,
2008.
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209
International
"Physical Characteristics of HfO2 Dielectrics at the Physical Scaling Limit"
P. S. Lysaght, J. C. Woicik, M. A. Sahiner, P. D. Kirsch, G. Bersuker, B.-H. Lee and R. Jammy,
Proc. of VLSI-TSA,
2008.
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208
International
"Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs"
J. Huang, P. D. Kirsch, M. Hussain, D. Heh, P. Sivasubramani, C. Young, D. C. Gilmer, C.S. Park, Y. N. Tan, C. Park, H.R. Harris, P. Majhi, G. Bersuker, B .H. Lee, H.-H. Tseng and R. Jammy,
Proc. of VLSI-TSA,
2008.
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207
International
"Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance"
Y. N. Tan, H. C. Wen, C. Park, D. C. Gilmer, C. D. Young, D. Heh, P. Sivasubramani, J. Huang, P. Majhi, P. D. Kirsch, B. H. Lee, H. H. Tseng and R. Jammy,
Proc. of VLSI-TSA,
2008.
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2007
206
International
"Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes: Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes"
Barnett, C. Y. Kang, P. Lysaght, G. Bersuker, R. Choi, H. K. Park, H. Hwang, B. H. Park, S. Kim, B. H. Lee,
SSDM,
2007.
205
International
"PBTI Associated Hot Carrier Characteristics of Nano-scale NMOSFETs with Advanced Gate Stack of Metal Gate/High-k dielectrics"
K. T. Lee, C. Y. Kang, R.Choi, S. C. Song, B. H. Lee, O. S. Yoo, H.-D. Lee, Y.-H. Jeong,
SISC,
2007.
204
International
"Improved Flash Memory Program and Erase Window with TiO2 Charge Trap Layer and High Temperature Dopant Activation Anneal"
Y. N. Tan, C. D. Young, D. Heh, C. Park , P. Sivasubramani, J. Huang, D. C. Gilmer, K. J. Choi, J. Kim, M. J. Kim, P. Majhi, R. Choi, P. D. Kirsch, B. H. Lee, H. H Tseng, R. Jammy,
4th Int. Symp. on Adv. Gate Stack Tech.,
2007.
203
International
"Effect of Si cap layer on interface quality and NBTI in Ge-on-si with HfSiO for High Mobility Channel pMOSFETs"
O.S. Yoo, J.W. Oh, K.S. Min, C.Y. Kang, K.-T. Lee, M.K. Na, S.C. Song, R. Choi, B. H. Lee e, P. Majhi, H-H Tseng and H.-D. Lee,
4th Int. Symp. on Adv. Gate Stack Tech.,
2007.
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202
International
"Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond"
P. Sivasubramani, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, R. Harris, S. C. Song, D. Heh, R. Choi, P. Majhi, G. Bersuker, B. H. Lee, H.-H. Tseng, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy,
Tech. Dig. of IEDM,
2007.
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201
International
"Mechanism of Vfb roll-off in High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function"
S. C. Song, C. S. Park, J. Price, C. Burham, R. Choi, H. H. Tseng, B. H. Lee, and R. Jammy,
Tech. Dig. of IEDM,
2007.
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200
International
"Flexible, simplified CMOS on Si(110) with Metal Gate/High-k for HP and LSTP"
H. R. Harris, S. E. Thompson, S. Krishnan, P. Kirsch, P. Majhi, C. E. Smith, M. M. Hussain, G. Sung, S. C. Song, R. Choi, H. Adhikari, S. Suthram, B. H. Lee, H. -H. Tseng, R. Jammy,
Tech. Dig. of IEDM,
2007.
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