Conferences 12 페이지 | 포항공대 EESL

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Total 516건 12 페이지

2007
186

International
"Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics" P. Sivasubramani, T. S. Böscke, J. Huang, C. D.Young, P. D. Kirsch, S. A. Krishnan, M. A. Quevedo-Lopez, S. Govindarajan, B. S. Ju, H. R.Harris, D. J. Lichtenwalner, J. S. Jur, A. I. Kingon, J. Kim, B. E. Gnade, R. M. Wallace, G. Bersuker, B. H. Lee, and , Symp. on VLSI Tech, 2007.

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185

International
"Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off" H.-C. Wen, K. Choi, C. S. Park, P. Majhi ,H.R.Harris, H. Niimi, H.B. Park, G.Bersuker, P. Lysaght, D. L. Kwong, S.C. Song,. B. H. Lee and R. Jammy, VLSI-TSA, 2007.

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184

International
"Higher Permittivity rare earth doped HfO2 and ZrO2 dielectrics for logic and memory applications" S.Govindarajan, T.S.Boscke, P.D.Kirsch, M.A.Quevedo-Lopez, P.Sivasubramini, S.C.Song, R.W.Wallace, B.E.Gande, U.Schroeder, R.Ramanathan, B. H. Lee, R.Jammy, VLSI-TSA, 2007.

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183

International
"Effect of in situ plasma treatment on high-k films after high-k removal with plasma etching from the S/D region" B.S.Ju, S.C.Song, T.H.Lee, B.Sassman, C.Y.Kang, B. H. Lee, R.Jammy, IRPS, 2007.

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182

International
"Impact of the bottom interfacial layer on the threshold voltage and device reliability of fluorine incorporated PMOSFET with high-k/metal electrode" K. Choi, T. Lee, S. Kwon, C. D. Young, H. R. Harris, H.C. Wen, M. Q. Lopeza, H. Park, N. Hiro, C. S. Park, R. Choi, S.C. Song, B. H. Lee, and R. Jammy, IRPS, 2007.

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181

International
"Comparison of Plasma-Induced Damage in SiO2/TiN and HfO2/TiN Gate Stacks" C.D. Young, G. Bersuker, F. Zhua, K. Matthews, R. Choi, S.C. Song, H.K. Park, J.C. Lee and B. H. Lee, IRPS, 2007.

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180

International
"Test Structures for Accurate UHF C-V measurement for Nano-Scale CMOSFETs with HfSiON and TiN Tetal Gate" K.T. Lee, G.A. Brown, H. Dawei, R. Choi, S.C. Song, B. H. Lee, O.S. Yoo, H.D Lee and Y-H Jeong, ICMTS, 2007.

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179

International
"Process challenges for future gate stack technology" B. H. Lee, B.S Ju, S.C. Song, M. Hussain, J. Barnett, nd R. Jammy, Semi. Tec. Symposium, 2007.
2006
178

International
"Advances and Challenges in Gate Stack Technology for nano scale CMOS Devices" B. H. Lee,, H.C.Wen, S. Song, R.Choi, P. Kirsch, P. Majhi and R. Jammy, Int. Conf. on Microelectronics, 2006.
177

International
"Tetragonal Phase Stabilization by Doping as Enabler of Highly Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM" T. S. Böscke, S. Govindarajan, C. Fachmann, J. Heitmann, A. Avellán, U. Schröder, S. Kudelka,P. D. Kirsch, C. Krug, P.Y. Hung, S.C. Song, B.S. Ju, J. Price, G. Pant, B. E. Gnade, W. Krautschneider, B. H. Lee and R. Jammy, Tech. Dig. of IEDM, 2006.

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176

International
"A novel in situ plasma treatment for damage-free metal/high-k gate stack RIE proces" B.S.Ju, S.C.Song, T.H.Lee, B.Sassman, C.Y.Kang, B. H. Lee, R.Jammy, IEDM, 2006.

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175

International
"Simplified manufacturable band edge metal gate solution for NMOS without a capping layer" H. R.Harris, H. Alshareef, H.C. Wen, S. Krishnan, K. Choi, H. Luan, D. Heh, C.S. Park, H.B. Park, M. Hussain, B.S. Ju, P.D. Kirsch, S.C. Song, P. Majhi, B. H. Lee, R. Jammy, IEDM, 2006.

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174

International
"An accurate lifetime analysis methodology incorporating governing NBTI mechanisms in high-k/SiO2 gate stacks" A. Neugroschel, G. Bersuker, R. Choi, C. Cochrane, P. Lenahan, D. Heh, C. Young, C.Y. Kang, B. H. Lee, R. Jammy, IEDM, 2006.

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173

International
"Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability" P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B. H. Lee, J.G. Wang, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, an, Tech. Dig. of IEDM, 2006.

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172

International
"Performance Enhancement of pMOSFETs with Optimized HfO2/TiN Gate Stack on Si(110) Substrates" S.A. Krishnan, R. Harris, P.D. Kirsch, C. Krug, M. Quevedo, C.Young, B. H. Lee, R. Choi, N. Chowdhury, S. Thomson, G. Bersuker, and R. Jammy, Tech. Dig. of IEDM, 2006.
171

International
"A novel electrode induced strain engineering for High performance SOI finFET utilizing Si(110) channel for both nMOS and pMOS" C.Y. Kang, R. Choi, S. C. Song, K. Choi, B. S. Ju, M. M. Hussain, B. H. Lee, G. Bersuker, C. Young, D. Heh, P. Kirsch, J. Barnet, J-W. Yang, P. Zeitzoff, H-H Tseng, R. Jammy, Tech. Dig. of IEDM, 2006.

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170

International
"Improved passivation and characterization of the Ge/HfSiO interface enabling surface channel Ge pFETs" H. J. Na, C. Krug, S. Joshi1, D. Heh, P. D. Kirsch, R. Choi, B. H. Lee, R. Jammy, S. K. Banerjee, and J. C. Lee, discussed at SISC, 2006.
169

International
"NBTI analysis methodology for high-k gate stacks" G.Bersuker, A.Neugroschel, R.Choi, C.Cochrane, P.Lenahan, D.Heh, C.Young, C.Y.Kang, B. H. Lee and R.Jammy, discussed at SISC, 2006.
168

International
"A study of high-k removal by plasma etching and its effect on gate dielectric characterization" B.S.Ju, S.-C. Song, J. Barnett, B. H. Lee, 53rd AVS Symp., 2006.
167

International
"Challenges in dual workfunction metal gate CMOS integration" B. H. Lee,, S.C. Song, M.Hussain, J.Barnett, R. Jammy, ECS Fall meeting, ECS Trans. 3, (2), p.263, 2006 (invited).

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166

International
"Comparison of novel BTI measurements for high-k dielectric MOSFETs" R. Choi, D. Heh, C.Y. Kang, C. Young, G. Bersuker, B. H. Lee, ICSICT, 2006.

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165

International
"Gate stack technology for nano-scale devices" B. H. Lee,, P.Kirsch, S.Song, R.Choi and R.Jammy, Proceedings of IEEE Nanotech. Mat. And Dev. conf., p.206, 2006 (invited).

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164

International
"Characterization of Hf-based Dielectric Thin Films via Synchrotron Radiation and Spallation Neutron Sources" P. S. Lysaght, J. C. Woicik, D. A. Fischer, M. A. Sahiner, M. Hartl, R. Hjelm, S. C. Song, B. H. Lee and R. Jammy, ISAGST, 2006.
163

International
"Fermi-level Pinning and Threshold Voltage Roll-Off Phenomena at Low Effective Oxide Thicknesses for p-MOS Work Function Metal Gates" H.C. Wen, K. Choi, C. S. Park, H. Luan, H. Alshareef, H. R. Harris, H.B. Park, M. Quevedo, G. Bersuker, P. Lysaght, P. Majhi, S.C. Song and B. H. Lee, ISAGST, 2006.
162

International
"Thickness, Morphology and Mobility: A Study of Hf-based Dielectric Performance" G.Pant, M.J.Kim,B.E.Gnade, R.M. Wallace, M.Queveo-Lopez, S. Krishnan, P.D.Kirsch, B. H. Lee and R. Jammy, ISAGST, 2006.
161

International
"A Novel Bias Temperature Instability Characterization Methodology for High-k MOSFETs" D.Heh, G. Bersuker, R.Choi, C.D. Young, and B. H. Lee, Proc. of ESSDERC, p.387-390, 2006.

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160

International
"Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling" M. A. Quevedo-Lopez, P.D. Kirsch, S. Krishnan, J. Barnett, H. N. Alshareef , A. Neugroschel, F.S. Aguirre-Tostado, B. E. Gnade, M. J. Kim, R. M. Wallace and B. H. Lee, Proc. of ESSDERC, 2006.

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159

International
"Effects of Optimization of Gate Edge Profile on sub-45nm Metal Gate High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors Characteristics" C. Y. Kang, R. Choi, S. H. Bae, S. C. Song, M. M. Hussain, C. Young, D. Heh, G. Bersuker and B. H. Lee, Ext. Abs. of SSDM, p.1112, 2006.
158

International
"Demonstration of Low Vt NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack" C. S. Park, S. C. Song, G. Bersuker, H.N. Alshareef, B. S. Ju, P. Majhi, B. H. Lee, R. Jammy, H. K. Park, M. S. Joo, J. Pu, and B. J. Cho, Ext. Abs. of SSDM, p.208, 2006.
157

International
"Compatibility of ALD HfSiON with Dual Metal Gate CMOS Integration" M. M. Hussain, S. C. Song, C. Y. Kang, M. Quevedo-Lopez, H. N. Alshareef, B. Sassman, R. Choi, B. H. Lee, Ext. Abs. of SSDM, p.1114, 2006.

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