Conferences 13 페이지 | 포항공대 EESL

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Total 516건 13 페이지

2006
156

International
"Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET" P.D. Kirsch, M.A. Quevedo-Lopez, S. A. Krishnan, C. Krug, F. S. Aguirre, R. M. Wallace, B. H. Lee and R. Jammy, Ext. Abs. of SSDM, p.388, 2006.
155

International
"Strategy to scale Gate stack technology for sub-30nm MOSFETs" B. H. Lee,, P.Kirsch, S.C. Song, R. Jammy, Workshop on gate stack and contact technology for sub-30nm transistor, Monterey, 2006 (invited).
154

International
"Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration" S. C. Song, Z. B. Zhang, M. M. Hussain, C. Huffman, J. Barnett, S. H. Bae, H. J. Li, P. Majhi, C. S. Park, B. S. Ju, , H. K. Park, C. Y. Kang, R. Choi, P. Zeitzoff, H. H. Tseng, B. H. Lee, and R. Jammy, Proc. of symposium on VLSI technology, p.10, 2006.

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153

International
"Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric" H.N. Alshareef , H.R. Harris, H.C. Wen, C.S. Park, C. Huffman, K. Choi, H.F. Luan, P. Majhi, B. H. Lee and R. Jammy, D.J. Lichtenwalner, J.S. Jur, and A. I. Kingon, Proc. of Symp. on VLSI Tech., p.16, 2006.

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152

International
"Process dependent transient charge trapping behaviors in HfSiO dielectric devices" R. Choi, C.Y. Kang, S. Krishnan, G. Bersuker, C. Young, D. Heh, P. Kirsch, and B. H. Lee, Proc. of ALD conference, 2006.
151

International
"Non-planar MOSFETs with Tunable Threshold Voltage (Vt) using ALD High-k/Metal Gate Stack" S.C. Song, M. M. Hussain, B. S. Ju, C. Y. Kang, R. Choi, B. H. Lee, H. H. Tseng, Proc. of ALD conference, 2006.
150

International
"Opportunities and challenges in ALD processing for advanced gate stack applications" R. Jammy, K.Choi, P. Kirsch, and B. H. Lee, Proc. of ALD conference, 2006 (invited).
149

International
"Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility and Vth stability" P.D.Kirwch, M.Quevedo-Lopez, S.A.Krishnan, S.C.Song, R.Choi, P.Majhi, Y.Senzaki, G.Bersuker, B.H.Lee, ECS Trans. 1, p.15, 2006.

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148

International
"Charge trapping effects in high-k transistors" G. Bersuker, C.S.park, J.Sim, C.Young, R.Choi, B.H.Lee, ECS Trans. 1, p.663, 2006.

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147

International
"The influence of NH3 anneal on the crystallization kinectics of HfO2 gate dielectric films" P.S.Lysaght, J.C.Woicik, B.Foran, J.Barnett, G. Bersuker, B.H.Lee, ECS Trans. 1, p.313, 2006.

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146

International
"Low Work-Function TaN-metal gate with Gadolinium Oxide Buffer Layer on Hf-based Dielectrics" G. Thareja, S. J. Rhee, H.-C. Wen, R. Harris, P. Majhi, B. H. Lee and J. C. Lee, Proc. of DRC, 2006.

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145

International
"Relationship of HfO2 Materials Properties and Transistor Performance" P. D. Kirsch, M. A. Quevedo, G. Pante, S. Krishnan, S. C. Song, H. J. Li, J. J. Peterson, B. H. Lee, R. W. Wallace and B. E. Gnade, VLSI-TSA, 2006.

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144

International
"Electron Trapping Processes in High-k Gate Dielectrics and Nature of Traps" G. Bersuker, J. Sim, C. S. Park, C. Young, S. Nadkarni, J. Gavartin, A. Shluger, R. Choi, B. H. Lee, VLSI-TSA, 2006.

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143

International
"Carrier Recombination in High-k Dielectrics and its Impact on Transient Charge Effects in High-k Devices" C. Y. Kang, R. Choi, S. C. Song, C. D. Young, G. Bersuker, B. H. Lee and J. C. Lee, Proc. of IRPS, p.657, 2006.

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142

International
"Reliability Characteristics of Metal/High-κ PMOS with Top Interface Engineered Band Offset Dielectric (BOD)" H. R.Harris, S.Krishnan, H.C. Wen, H. Alshareef, A.Rao, P. Majhi, R. Choi, B. H. Lee, G. Bersuker and G. Brown, Proc. of IRPS, p.661, 2006.

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141

International
"Detection of Electron Trap Generation Due to Constant Voltage Stress on High-κ Gate Stacks" C.D. Young, D. Heh, S. Nadkarni, H.R. Harris, R. Choi, J.J. Peterson, J.H. Sim, S.A. Krishnan, J. Barnett, E. Vogel, B. H. Lee, P. Zeitzoff, G.A. Brown, and G. Bersuker, Proc. of IRPS, p.169, 2006.

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140

International
"Intrinsic Threshold Voltage Instability of the HfO2 Gate Stack NMOS Transistors" G. Bersuker, J. Sim, C. S. Park, C. Young, S. Nadkarni, R. Choi, B. H. Lee, Proc. of IRPS, p.179, 2006.

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139

International
"Impact of nitrogen on PBTI characteristics of HfSiON/TiN Gate Stacks" S. A. Krishnan, M.Quevedo, H.-J. Li, P.Kirsch, R.Choi, C. Young, J.Peterson, B. H. Lee, G.Bersuker an J.C. Lee, Proc. of IRPS, p.325, 2006.

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138

International
"Internal dielectric interface: SiO2/HfO2" O. Sharia, A.A.Demkov, G.Bersuker and B. H. Lee, the Bulletin of the American Physical Society, 2006.

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137

International
"Surface Preparation Techniques Used for Fabricating High-κ/Metal Gate Device Structures" J. Barnett, M. Hussain, J. J. Peterson, P. Kirsch, S.C.Song, C.S.Park, G. Bersuker, B. H. Lee and H. R. Huff, ISTC, 2006.
2005
136

International
"Polarity dependence of FN Stress induced degradation on NMOSFETs with Polysilicon Gate and HfSiON Gate Dielectrics" R. Choi, B. H. Lee, G. Brown, P. Zeitzoff, J. H. Sim, and J. C. Lee, International symposium on the physical and failure analysis of integrated circuits (IPFA), 2004.

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135

International
"High Mobility HfSiON Gate Dielectric for High Performance Applications with Minimal Charge Trapping and Suppressed Crystallization" M.A. Quevedo-Lopez, S.A. Krishnan, P.D. Kirsch, H.J. Li, J.H. Sim, C. Huffman, J. Peterson, B.H. Lee, G. Pant, B.E. Gnade, M.J. Kim, R.M. Wallace, D. Guo, H. Bu, T.P. Ma, Tech. Dig. of IEDM, 2005.
134

International
"Electrical and Reliability characteristics of HfSiO MOSFET annealed in F2 ambient" M. Chang, M. Jo, H. Park, M.S. Rahman and B.H. Lee, R. Choi, H. Hwang, SISC, 2005.
133

International
"Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2" M.S. Rahman, H. Park, M. Chang, B.H. Lee, R. Choi, H. Hwang, SISC, 2005.
132

International
"Fast relaxation behavior and its implication on the measurement in high-k gate dielectric" R. Choi, B.H. Lee, K. Mathur, C.D. Young, G. Bersuker, Y. Zhao, SISC, 2005.
131

International
"Process-Induced Work Function Modulations of TaxAl1-xNy Metal Gate Electrodes" H.N. Alshareef, K. Choi, H.C. Wen, R. Harris, H.F. Luan, M. Quevedo-Lopez, P. Majhi, B.H. Lee, SISC, 2005.
130

International
"Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2" M.S. Rahman, H. Park, M. Chang, B.H. Lee, R. Choi, H. Hwang, SISC, 2005.
129

International
"Electrical and Reliability characteristics of HfSiO MOSFET annealed in F2 ambient" M. Chang, M. Jo, H. Park, M.S. Rahman, B.H. Lee, R. Choi, H. Hwang, SISC, 2005.
128

International
"Spectroscopic analysis of the process dependent microstructure of ultra-thin high-k gate dielectric film systems" P.S. Lysaght, J. Barnett, B. Foran, M. Quevedo, P. Kirsch, G. Bersuker, M. Gardner, B.H. Lee, L. Larson, 5th International Symposium on Atomic Layer Characterization for New Materials and Devices, 2005.

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127

International
"Material Characterization of TEMAHf and HfCl4 HfO2 ALD to Enable Dielectric Scaling, Improved Electron Mobility and Vth Stability" P.D. Kirsch, H.-J. Li, J. Peterson, M. Quevedoc, Y. Senzaki, N. Moumen, S.C. Song, B.H. Lee, AVS ALD symposium, 2005.

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