Conferences 14 페이지 | 포항공대 EESL

CONTACT US

Research
PEOPLE
- Professor
- Member
- Visitor
- Alumni
Publication
BOARD
- Lab board
- News
- Gallery

Total 529건 14 페이지

2006
139

International
"Impact of nitrogen on PBTI characteristics of HfSiON/TiN Gate Stacks" S. A. Krishnan, M.Quevedo, H.-J. Li, P.Kirsch, R.Choi, C. Young, J.Peterson, B. H. Lee, G.Bersuker an J.C. Lee, Proc. of IRPS, p.325, 2006.

Download
138

International
"Internal dielectric interface: SiO2/HfO2" O. Sharia, A.A.Demkov, G.Bersuker and B. H. Lee, the Bulletin of the American Physical Society, 2006.

Download
137

International
"Surface Preparation Techniques Used for Fabricating High-κ/Metal Gate Device Structures" J. Barnett, M. Hussain, J. J. Peterson, P. Kirsch, S.C.Song, C.S.Park, G. Bersuker, B. H. Lee and H. R. Huff, ISTC, 2006.
2005
136

International
"Polarity dependence of FN Stress induced degradation on NMOSFETs with Polysilicon Gate and HfSiON Gate Dielectrics" R. Choi, B. H. Lee, G. Brown, P. Zeitzoff, J. H. Sim, and J. C. Lee, International symposium on the physical and failure analysis of integrated circuits (IPFA), 2004.

Download
135

International
"High Mobility HfSiON Gate Dielectric for High Performance Applications with Minimal Charge Trapping and Suppressed Crystallization" M.A. Quevedo-Lopez, S.A. Krishnan, P.D. Kirsch, H.J. Li, J.H. Sim, C. Huffman, J. Peterson, B.H. Lee, G. Pant, B.E. Gnade, M.J. Kim, R.M. Wallace, D. Guo, H. Bu, T.P. Ma, Tech. Dig. of IEDM, 2005.
134

International
"Electrical and Reliability characteristics of HfSiO MOSFET annealed in F2 ambient" M. Chang, M. Jo, H. Park, M.S. Rahman and B.H. Lee, R. Choi, H. Hwang, SISC, 2005.
133

International
"Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2" M.S. Rahman, H. Park, M. Chang, B.H. Lee, R. Choi, H. Hwang, SISC, 2005.
132

International
"Fast relaxation behavior and its implication on the measurement in high-k gate dielectric" R. Choi, B.H. Lee, K. Mathur, C.D. Young, G. Bersuker, Y. Zhao, SISC, 2005.
131

International
"Process-Induced Work Function Modulations of TaxAl1-xNy Metal Gate Electrodes" H.N. Alshareef, K. Choi, H.C. Wen, R. Harris, H.F. Luan, M. Quevedo-Lopez, P. Majhi, B.H. Lee, SISC, 2005.
130

International
"Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2" M.S. Rahman, H. Park, M. Chang, B.H. Lee, R. Choi, H. Hwang, SISC, 2005.
129

International
"Electrical and Reliability characteristics of HfSiO MOSFET annealed in F2 ambient" M. Chang, M. Jo, H. Park, M.S. Rahman, B.H. Lee, R. Choi, H. Hwang, SISC, 2005.
128

International
"Spectroscopic analysis of the process dependent microstructure of ultra-thin high-k gate dielectric film systems" P.S. Lysaght, J. Barnett, B. Foran, M. Quevedo, P. Kirsch, G. Bersuker, M. Gardner, B.H. Lee, L. Larson, 5th International Symposium on Atomic Layer Characterization for New Materials and Devices, 2005.

Download
127

International
"Material Characterization of TEMAHf and HfCl4 HfO2 ALD to Enable Dielectric Scaling, Improved Electron Mobility and Vth Stability" P.D. Kirsch, H.-J. Li, J. Peterson, M. Quevedoc, Y. Senzaki, N. Moumen, S.C. Song, B.H. Lee, AVS ALD symposium, 2005.
126

International
"The Effective Work Function of Plasma Injection-Atomic Layer Deposition (PI-ALD) Metal Nitride Electrodes on High-k Dielectric Materials" K. Choi, P. Lysaght, H. Alshareef, H.-C. Wen, R. Harris, H. Luan, P. Majhi, Y. Senzaki, B.H. Lee, S.K. Lee, S.I. Lee, AVS ALD symposium, 2005.
125

International
"Detection of Trap Generation in High-k Gate Stacks due to Constant Voltage Stress" C.D. Young, D. Heh, S. Nadkarni, R. Choi, J.J. Peterson, H.R. Harris, J.H. Sim, S.A. Krishnan, J. Barnett, E. Vogel, B.H. Lee, P. Zeitzoff, G.A. Brown, G. Bersuker, Proc. of Int. Integrated Rel. Workshop, 2005.
124

International
"Ultra-thin ALD-HfSiON/TiN Gate Stacks" S.A. Krishnan, M.A. Quevedo-Lopez, R. Choi, P. Kirsch, C. Young, R. Harris, J. Peterson, H.J. Li, B.H. Lee, J.C. Lee, Proc. of Int. Integrated Rel. Workshop, 2005.
123

International
"An Integrable Dual Metal Gate/High-k CMOS Solution for FD-SOI and MuGFET Technologies" Z. Zhang, S.C. Song, K. Choi, J.H. Sim, P. Majhi, B.H. Lee, Proc. of IEEE SOI conf., 2005.
122

International
"Effects of ALD TiN Metal Gate Thickness on Metal Gate /High-k Dielectric SOI FinFET Characteristics" C.Y. Kang, R. Choi, S.C. Song, B.S. Ju, M.M. Hussain, B.H. Lee, J-W. Yang, D. Pham, H-H. Tseng, IEEE SOI Conference, 2006.

Download
121

International
"Prospect of high-k/metal gate stack technology for future CMOS devices" B.H. Lee, P. Kirsch, P. Majhi, S.C. Song, R. Choi, G. Bersuker, 5th int. Symp. on Physics and Chemistry of SiO2 and Si-SiO2 interface, ECS Meeting, 2005, invited.
120

International
"Demonstration of High Performance Transistors with PVD Metal Gate" H.R. Harris, H.C. Wen, K. Choi, H. Alshareef, H. Luan, Y. Senzaki, C.D. Young, S.C. Song, Z. Zhang, G. Bersuker, P. Majhi, B.H. Lee, Proc. of ESSDERC, 2005, invited.

Download
119

International
"Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics" B.H. Lee, R. Choi, S.C. Song, J. Sim, C. Young, G. Bersuker, H.K. Park, H. Hwang, Ext. Abs. of Symp. on SSDM, 2005, invited.
118

International
"NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ ALD-TiN Gate Stacks" S.A. Krishnan, M. Quevedo, R. Harris, P.D. Kirsch, R. Choi, B.H. Lee, G. Bersuker, J. Peterson, H-J. Li, C. Young, J.C. Lee, Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
117

International
"A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors" R. Choi, B.H. Lee, H.K. Park, C.D. Young, J.H. Sim, S.C. Song, G. Bersuker, Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
116

International
"Impacts of Si Concentration in Hf-silicate on Performance and Reliability of Metal Gate CMOSFET" S.C. Song, S.H. Bae, J.H. Sim, G. Bersuker, Z. Zhang, P. Kirsch, P. Majhi, N. Moumen, P. Zeitzoff, B.H. Lee, Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
115

International
"Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode" H.K. Park, R. Choi, B.H. Lee, C.D. Young, M. Chang, J.C. Lee, H. Hwang, Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
114

International
"Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2" P.D. Kirsch, S.C. Song, J.H. Sim, S. Krishnan, J. Gutt, J. Peterson, H.-J. Li, M. Quevedo-Lopez, C.D. Young, R. Choi, J. Barnett, N. Moumen, K.S. Choi, , C. Huffman, P. Majhi, M. Gardner, G. Brown, G. Bersuker, B.H. Lee, Proc. of ESSDERC, 2005.
113

International
"Work function tuning by thickness variation of metal film and dielectric surface treatment" K. Choi, H. Alshareef, P. Lysaght, H.-C. Wen, R. Harris, H. Luan, P. Majhi, B.H. Lee, Proc. of ESSDERC, 2005.
112

International
"ALD of Advanced High-k dielectric and Metal Gate Stacks for MOS Devices" Y. Senzaki, J. Gutt, G. Brown, P. Kirsch, H. Alshareef, K. Choi, H. Wen, P. Majhi, B.H. Lee, AIP Conf. Proc. 788, characterization and metrology for ULSI technology, 2005, invited.
111

International
"Physical Characterization of Novel Metal Electrodes for Hf-based Transistors" P.S. Lysaght, H.-C. Wen, H. Alshareef, K. Choi, R. Harris, H. Luan, G. Lian, M. Campin, M. Clark, B. Foran, P. Majhi, B.H. Lee, AIP Conf. Proc. 788, characterization and metrology for ULSI technology, 2005.

Download
110

International
"Integration of Dual Metal Gate CMOS with TaSiN and Ru Gate Electrodes on HfO2 Gate Dielectric" Z.B. Zhang, S.C. Song, C. Huffman, J. Barnett, N. Moumen, H. Alshareef, P. Majhi, M. Hussain, M.S. Akbar, J.N. Sim, S.H. Bae, B. Sassman, B.H. Lee, Proc. of VLSI, 2005.

Download

검색