Conferences 14 페이지 | 포항공대 EESL

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Total 516건 14 페이지

2005
126

International
"The Effective Work Function of Plasma Injection-Atomic Layer Deposition (PI-ALD) Metal Nitride Electrodes on High-k Dielectric Materials" K. Choi, P. Lysaght, H. Alshareef, H.-C. Wen, R. Harris, H. Luan, P. Majhi, Y. Senzaki, B.H. Lee, S.K. Lee, S.I. Lee, AVS ALD symposium, 2005.
125

International
"Detection of Trap Generation in High-k Gate Stacks due to Constant Voltage Stress" C.D. Young, D. Heh, S. Nadkarni, R. Choi, J.J. Peterson, H.R. Harris, J.H. Sim, S.A. Krishnan, J. Barnett, E. Vogel, B.H. Lee, P. Zeitzoff, G.A. Brown, G. Bersuker, Proc. of Int. Integrated Rel. Workshop, 2005.
124

International
"Ultra-thin ALD-HfSiON/TiN Gate Stacks" S.A. Krishnan, M.A. Quevedo-Lopez, R. Choi, P. Kirsch, C. Young, R. Harris, J. Peterson, H.J. Li, B.H. Lee, J.C. Lee, Proc. of Int. Integrated Rel. Workshop, 2005.
123

International
"An Integrable Dual Metal Gate/High-k CMOS Solution for FD-SOI and MuGFET Technologies" Z. Zhang, S.C. Song, K. Choi, J.H. Sim, P. Majhi, B.H. Lee, Proc. of IEEE SOI conf., 2005.
122

International
"Effects of ALD TiN Metal Gate Thickness on Metal Gate /High-k Dielectric SOI FinFET Characteristics" C.Y. Kang, R. Choi, S.C. Song, B.S. Ju, M.M. Hussain, B.H. Lee, J-W. Yang, D. Pham, H-H. Tseng, IEEE SOI Conference, 2006.

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121

International
"Prospect of high-k/metal gate stack technology for future CMOS devices" B.H. Lee, P. Kirsch, P. Majhi, S.C. Song, R. Choi, G. Bersuker, 5th int. Symp. on Physics and Chemistry of SiO2 and Si-SiO2 interface, ECS Meeting, 2005, invited.
120

International
"Demonstration of High Performance Transistors with PVD Metal Gate" H.R. Harris, H.C. Wen, K. Choi, H. Alshareef, H. Luan, Y. Senzaki, C.D. Young, S.C. Song, Z. Zhang, G. Bersuker, P. Majhi, B.H. Lee, Proc. of ESSDERC, 2005, invited.

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119

International
"Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics" B.H. Lee, R. Choi, S.C. Song, J. Sim, C. Young, G. Bersuker, H.K. Park, H. Hwang, Ext. Abs. of Symp. on SSDM, 2005, invited.
118

International
"NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ ALD-TiN Gate Stacks" S.A. Krishnan, M. Quevedo, R. Harris, P.D. Kirsch, R. Choi, B.H. Lee, G. Bersuker, J. Peterson, H-J. Li, C. Young, J.C. Lee, Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
117

International
"A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors" R. Choi, B.H. Lee, H.K. Park, C.D. Young, J.H. Sim, S.C. Song, G. Bersuker, Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
116

International
"Impacts of Si Concentration in Hf-silicate on Performance and Reliability of Metal Gate CMOSFET" S.C. Song, S.H. Bae, J.H. Sim, G. Bersuker, Z. Zhang, P. Kirsch, P. Majhi, N. Moumen, P. Zeitzoff, B.H. Lee, Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
115

International
"Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode" H.K. Park, R. Choi, B.H. Lee, C.D. Young, M. Chang, J.C. Lee, H. Hwang, Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
114

International
"Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2" P.D. Kirsch, S.C. Song, J.H. Sim, S. Krishnan, J. Gutt, J. Peterson, H.-J. Li, M. Quevedo-Lopez, C.D. Young, R. Choi, J. Barnett, N. Moumen, K.S. Choi, , C. Huffman, P. Majhi, M. Gardner, G. Brown, G. Bersuker, B.H. Lee, Proc. of ESSDERC, 2005.
113

International
"Work function tuning by thickness variation of metal film and dielectric surface treatment" K. Choi, H. Alshareef, P. Lysaght, H.-C. Wen, R. Harris, H. Luan, P. Majhi, B.H. Lee, Proc. of ESSDERC, 2005.
112

International
"ALD of Advanced High-k dielectric and Metal Gate Stacks for MOS Devices" Y. Senzaki, J. Gutt, G. Brown, P. Kirsch, H. Alshareef, K. Choi, H. Wen, P. Majhi, B.H. Lee, AIP Conf. Proc. 788, characterization and metrology for ULSI technology, 2005, invited.
111

International
"Physical Characterization of Novel Metal Electrodes for Hf-based Transistors" P.S. Lysaght, H.-C. Wen, H. Alshareef, K. Choi, R. Harris, H. Luan, G. Lian, M. Campin, M. Clark, B. Foran, P. Majhi, B.H. Lee, AIP Conf. Proc. 788, characterization and metrology for ULSI technology, 2005.

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110

International
"Integration of Dual Metal Gate CMOS with TaSiN and Ru Gate Electrodes on HfO2 Gate Dielectric" Z.B. Zhang, S.C. Song, C. Huffman, J. Barnett, N. Moumen, H. Alshareef, P. Majhi, M. Hussain, M.S. Akbar, J.N. Sim, S.H. Bae, B. Sassman, B.H. Lee, Proc. of VLSI, 2005.

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109

International
"Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications" H.C. Wen, H.N. Alshareef, H. Luan, K. Choi, P. Lysaght, H.R. Harris, C. Huffman, G.A. Brown, G. Bersuker, P. Zeitzoff, H. Huff, P. Majhi, B.H. Lee, Proc. of VLSI, 2005.

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108

International
"Impact of thickness of metal nitride (TiN) in Poly Si/TiN gate stack on electrical performance and reliability" S.H. Bae, S.C. Song, B.H. Lee, Proceedings of EMC, 2005.
107

International
"High-k Dielectric Process Development for Enhanced Electron Mobility in High Performance Field Effect Transistors" P.D. Kirsch, J.J. Peterson, H.-J. Li, J. Gutt, S. Krishnan, M. Quevedo-Lopez, B.H. Lee, N. Moumen, J. Barnett, P. Majhi, S.C. Song, C. Ramiller, ISTC, 2005.

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106

International
"Electrical Characterization Methodologies for Advanced Gate Stacks with Metal gate and High-k dielectrics" B.H. Lee, G. Bersuker, N. Moumen, P. Majhi, P. Kirsch, S.C. Song, C. Ramiller, International Semiconductor Technology Conference, 2005, invited.
105

International
"Transient charging effects and its implication to the reliability of high-k dielectrics" B.H. Lee, R. Choi, C. Young, J. Sim, G. Bersuker, NATO Workshop on defect in high-k dielectrics, St. Petersburg, 2005, invited.
104

International
"Mechanism of charge trapping reduction in scaled high-k gate stacks" G. Bersuker, B.H. Lee, H. Huff, NATO Workshop on defect in high-k dielectrics, St. Petersburg, 2005, invited.
103

International
"A preliminary understanding of processing-nanostructure-property inter-relationships in High-k/Metal gate stacks" P. Majhi, B.H. Lee, NATO Workshop on defect in high-k dielectrics, St. Petersburg, 2005, invited.
102

International
"Comparison of MOSFET characteristics between ALD and MOCVD TiN metal gate on Hf silicate" S.C. Song, B.H. Lee, Z. Zhang, K. Choi, S.H. Bae, H. Alshareef, P. Majhi, H.C. Wen, J. Bennett, B. Sassman, P. Zeitzoff, ECS spring meeting, 2005.
101

International
"Gate Work Function Modification Using Ultra-Thin Metal Interlayers" H.N. Alshareef, K. Choi, H.C. Wen, H.R. Harris, H. Luan, P. Lysaght, P. Majhi, B. H. Lee, ECS spring meeting, 2005.
100

International
"Interfacial layer properties in high-k gate dielectric transistors" G. Bersuker, J. Peterson, J. Barnet, J. Sim, R. Choi, B.H. Lee, P. Lysaght, H.R. Huff, ECS spring meeting, 2005.
99

International
"Charge Trapping in n-MOSFETs with TiN/HfSixOy/SiO2/p-Si Gate Stack during Substrate Injection" P. Srinivasan , N.A. Chowdhury, A. Peralta, D. Misra, R. Choi, B.H. Lee, ECS spring, 2005.
98

International
"Recent Development of CMOSFET with Hf-based High-k Dielectric" S.C. Song, G. Bersuker, B.H. Lee, Z. Zhang, P. Kirsch, P. Majhi, C.Ramiller, ECS spring meeting, 2005, invited.
97

International
"Challenges in the High-k Dielectric Implementation for 45nm Technology Node" B.H. Lee, S.C. Song, C. Young, P. Kirsch, R. Choi, P. Lysaght, P. Majhi, G. Bersuker, C. Ramiller, Proc. of ICICDT, 2005, invited.

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