Conferences 15 페이지 | 포항공대 EESL

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Total 529건 15 페이지

2005
109

International
"Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications" H.C. Wen, H.N. Alshareef, H. Luan, K. Choi, P. Lysaght, H.R. Harris, C. Huffman, G.A. Brown, G. Bersuker, P. Zeitzoff, H. Huff, P. Majhi, B.H. Lee, Proc. of VLSI, 2005.

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108

International
"Impact of thickness of metal nitride (TiN) in Poly Si/TiN gate stack on electrical performance and reliability" S.H. Bae, S.C. Song, B.H. Lee, Proceedings of EMC, 2005.
107

International
"High-k Dielectric Process Development for Enhanced Electron Mobility in High Performance Field Effect Transistors" P.D. Kirsch, J.J. Peterson, H.-J. Li, J. Gutt, S. Krishnan, M. Quevedo-Lopez, B.H. Lee, N. Moumen, J. Barnett, P. Majhi, S.C. Song, C. Ramiller, ISTC, 2005.

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106

International
"Electrical Characterization Methodologies for Advanced Gate Stacks with Metal gate and High-k dielectrics" B.H. Lee, G. Bersuker, N. Moumen, P. Majhi, P. Kirsch, S.C. Song, C. Ramiller, International Semiconductor Technology Conference, 2005, invited.
105

International
"Transient charging effects and its implication to the reliability of high-k dielectrics" B.H. Lee, R. Choi, C. Young, J. Sim, G. Bersuker, NATO Workshop on defect in high-k dielectrics, St. Petersburg, 2005, invited.
104

International
"Mechanism of charge trapping reduction in scaled high-k gate stacks" G. Bersuker, B.H. Lee, H. Huff, NATO Workshop on defect in high-k dielectrics, St. Petersburg, 2005, invited.
103

International
"A preliminary understanding of processing-nanostructure-property inter-relationships in High-k/Metal gate stacks" P. Majhi, B.H. Lee, NATO Workshop on defect in high-k dielectrics, St. Petersburg, 2005, invited.
102

International
"Comparison of MOSFET characteristics between ALD and MOCVD TiN metal gate on Hf silicate" S.C. Song, B.H. Lee, Z. Zhang, K. Choi, S.H. Bae, H. Alshareef, P. Majhi, H.C. Wen, J. Bennett, B. Sassman, P. Zeitzoff, ECS spring meeting, 2005.
101

International
"Gate Work Function Modification Using Ultra-Thin Metal Interlayers" H.N. Alshareef, K. Choi, H.C. Wen, H.R. Harris, H. Luan, P. Lysaght, P. Majhi, B. H. Lee, ECS spring meeting, 2005.
100

International
"Interfacial layer properties in high-k gate dielectric transistors" G. Bersuker, J. Peterson, J. Barnet, J. Sim, R. Choi, B.H. Lee, P. Lysaght, H.R. Huff, ECS spring meeting, 2005.
99

International
"Charge Trapping in n-MOSFETs with TiN/HfSixOy/SiO2/p-Si Gate Stack during Substrate Injection" P. Srinivasan , N.A. Chowdhury, A. Peralta, D. Misra, R. Choi, B.H. Lee, ECS spring, 2005.
98

International
"Recent Development of CMOSFET with Hf-based High-k Dielectric" S.C. Song, G. Bersuker, B.H. Lee, Z. Zhang, P. Kirsch, P. Majhi, C.Ramiller, ECS spring meeting, 2005, invited.
97

International
"Challenges in the High-k Dielectric Implementation for 45nm Technology Node" B.H. Lee, S.C. Song, C. Young, P. Kirsch, R. Choi, P. Lysaght, P. Majhi, G. Bersuker, C. Ramiller, Proc. of ICICDT, 2005, invited.
96

International
"Evaluation and Integration of Metal Gate Electrodes for Future Generation Dual Metal CMOS" P. Majhi, H.C. Wen, H. Alshareef, K. Choi, R. Harris, P. Lysaght, H. Luan, Y. Senzaki, S.C. Song, B.H. Lee, C. Ramiller, Proc. of ICICDT, 2005, invited.

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95

International
"On the Structure-Property Inter-Relationships of Metal Gate Electrodes for Future Generation CMOS" P. Majhi, H. Alshareef, H.-C. Wen, K. Choi, P. Lysaght, C. Huffman, H. Luan, R. Harris, B.H. Lee, C. Ramiller, ISTC, 2005, invited.
94

International
"Effects of TiN Overlayer on ALD TaCN Metal Gate/High-k MOSFET Characteristics" Z.B. Zhang, S.C. Song, K. Choi, J.H. Sim, P. Majhi, B.H. Lee, Proc. of DRC, 2005.

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93

International
"Cold and Hot Carrier effects on HfO2 and HfSiO NMOSFETS with TiN gate electrode" J.H. Sim, S.C. Song, R. Choi, C.D. Young, G. Bersuker, S.H. Bae, D.L. Kwong, B. H. Lee, Proc. of DRC, 2005.

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92

International
"Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS" H.C. Wen, P. Majhi, H. Alshareef, C. Huffman, K. Choi, P. Lysaght, R. Harris, H. Luand, B. H. Lee, Proc. of VLSI-TSA, 2005.

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91

International
"Growth Mechanism of ALD-TiN and the Thickness Dependence of Work Function" K. Choi, P.Lysaght, Alshareef, H.C. Wen, R. Harris, H. Luan, K. Matthews, P. Majhi, B.H. Lee, Proc. of VLSI-TSA, 2005.

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90

International
"A Systematic Study of the Influence of Nitrogen in Tuning the Effective Work Function of Nitrided Metal Gates" P. Majhi, H.C. Wen, K. Choi, H. Alsharee, C. Huffman, B.H. Lee, Proc. of VLSI-TSA, 2005.

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89

International
"Threshold voltage instability of HfSiO dielectric MOSFET under AC pulsed stress" R. Choi, R. Harris, B.H. Lee, C.D. Young, J.H. Sim, K. Matthews, M. Pendley, G. Bersuker, Proc. of IRPS, 2005.

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88

International
"Interfacial Layer Dependence of HfSixOy Gate Stacks on Vt Instability and Charge Trapping Using Ultra-Short Pulse I-V Characterization" C.D. Young, R. Choi, J.H. Sim, B.H. Lee, P. Zeitzoff, Y. Zhao, K. Matthews, G.A. Brown, G. Bersuker, Proc. of IRPS, 2005.

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87

International
"Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices" R. Harris, R. Choi, B.H. Lee, C.D. Young, J.H. Sim, K. Mathews, P. Zeitzoff, P. Majhi, G. Bersuker, Proc. of IRPS, 2005.

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86

International
"Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack" R. Choi, B.H. Lee, C.D. Young, J.H. Sim, K. Mathews, G. Bersuker, P. Zeitzoff, Proc. of IRPS, 2005.

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85

International
"Hot carrier and cold carrier studies during stress in Hf-silciate NMOS transistors with Poly and TiN gate stack" J.H. Sim, B.H. Lee, S.C. Song, C.D. Young a, R. Choi, H. Rusty Harris, G. Bersuker, Proc. of IRPS, 2005.
84

International
"Effect of High-k Post-Deposition Cleaning in Improving CMOS Bias Instabilities and Mobility: A Potential Issue in Reliability of Dual Metal Gate Technology" M.S. Akbar, N. Moumen, J. Barnett, B.H. Lee, J.C. Lee, Proc. of IRPS, 2005.

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83

International
"Dominant SILC mechanisms in HfO2/TiN gate NMOS and PMOS transistors" S.A. Krishnan, J.J. Peterson, C. Young, G. Brown, R. Choi, R. Harris, J. Sim, B.H. Lee, P. Zeitzoff, P. Kirsch, J. Gutt, H.J. Li, K. Matthews, J.C. Lee, G. Bersuker, Proc. of IRPS, 2005.

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82

International
"Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric" H. Park, M.S. Rahman, M. Chang, B.H. Lee, M.Gardner, C.D. Young, H. Hwang, Proc. of IRPS, 2005.

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81

International
"Impact of Plasma Induced Damage on PMOSFETs with TiN/Hf-silicate Stack" S.C. Song, S.H. Bae, Z. Zhang, J.H. Sim, B. Sassman, G. Bersuker, P. Zeitzoff, B.H. Lee, Proc. of IRPS, 2005.

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80

International
"ALD HfO2 thickness dependence on charge trapping characteristics in mobility enhancement" J.H. Sim, S.C. Song, P.D. Kirsch, C.D. Young, R. Choi, G. Bersuker, D.L. Kwong, B. H. Lee, Proc. of INFOS, 2005.

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