Conferences 15 페이지 | 포항공대 EESL

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Total 516건 15 페이지

2005
96

International
"Evaluation and Integration of Metal Gate Electrodes for Future Generation Dual Metal CMOS" P. Majhi, H.C. Wen, H. Alshareef, K. Choi, R. Harris, P. Lysaght, H. Luan, Y. Senzaki, S.C. Song, B.H. Lee, C. Ramiller, Proc. of ICICDT, 2005, invited.

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95

International
"On the Structure-Property Inter-Relationships of Metal Gate Electrodes for Future Generation CMOS" P. Majhi, H. Alshareef, H.-C. Wen, K. Choi, P. Lysaght, C. Huffman, H. Luan, R. Harris, B.H. Lee, C. Ramiller, ISTC, 2005, invited.
94

International
"Effects of TiN Overlayer on ALD TaCN Metal Gate/High-k MOSFET Characteristics" Z.B. Zhang, S.C. Song, K. Choi, J.H. Sim, P. Majhi, B.H. Lee, Proc. of DRC, 2005.

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93

International
"Cold and Hot Carrier effects on HfO2 and HfSiO NMOSFETS with TiN gate electrode" J.H. Sim, S.C. Song, R. Choi, C.D. Young, G. Bersuker, S.H. Bae, D.L. Kwong, B. H. Lee, Proc. of DRC, 2005.

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92

International
"Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS" H.C. Wen, P. Majhi, H. Alshareef, C. Huffman, K. Choi, P. Lysaght, R. Harris, H. Luand, B. H. Lee, Proc. of VLSI-TSA, 2005.

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91

International
"Growth Mechanism of ALD-TiN and the Thickness Dependence of Work Function" K. Choi, P.Lysaght, Alshareef, H.C. Wen, R. Harris, H. Luan, K. Matthews, P. Majhi, B.H. Lee, Proc. of VLSI-TSA, 2005.

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90

International
"A Systematic Study of the Influence of Nitrogen in Tuning the Effective Work Function of Nitrided Metal Gates" P. Majhi, H.C. Wen, K. Choi, H. Alsharee, C. Huffman, B.H. Lee, Proc. of VLSI-TSA, 2005.

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89

International
"Threshold voltage instability of HfSiO dielectric MOSFET under AC pulsed stress" R. Choi, R. Harris, B.H. Lee, C.D. Young, J.H. Sim, K. Matthews, M. Pendley, G. Bersuker, Proc. of IRPS, 2005.

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88

International
"Interfacial Layer Dependence of HfSixOy Gate Stacks on Vt Instability and Charge Trapping Using Ultra-Short Pulse I-V Characterization" C.D. Young, R. Choi, J.H. Sim, B.H. Lee, P. Zeitzoff, Y. Zhao, K. Matthews, G.A. Brown, G. Bersuker, Proc. of IRPS, 2005.

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87

International
"Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices" R. Harris, R. Choi, B.H. Lee, C.D. Young, J.H. Sim, K. Mathews, P. Zeitzoff, P. Majhi, G. Bersuker, Proc. of IRPS, 2005.

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86

International
"Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack" R. Choi, B.H. Lee, C.D. Young, J.H. Sim, K. Mathews, G. Bersuker, P. Zeitzoff, Proc. of IRPS, 2005.

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85

International
"Hot carrier and cold carrier studies during stress in Hf-silciate NMOS transistors with Poly and TiN gate stack" J.H. Sim, B.H. Lee, S.C. Song, C.D. Young a, R. Choi, H. Rusty Harris, G. Bersuker, Proc. of IRPS, 2005.
84

International
"Effect of High-k Post-Deposition Cleaning in Improving CMOS Bias Instabilities and Mobility: A Potential Issue in Reliability of Dual Metal Gate Technology" M.S. Akbar, N. Moumen, J. Barnett, B.H. Lee, J.C. Lee, Proc. of IRPS, 2005.

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83

International
"Dominant SILC mechanisms in HfO2/TiN gate NMOS and PMOS transistors" S.A. Krishnan, J.J. Peterson, C. Young, G. Brown, R. Choi, R. Harris, J. Sim, B.H. Lee, P. Zeitzoff, P. Kirsch, J. Gutt, H.J. Li, K. Matthews, J.C. Lee, G. Bersuker, Proc. of IRPS, 2005.

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82

International
"Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric" H. Park, M.S. Rahman, M. Chang, B.H. Lee, M.Gardner, C.D. Young, H. Hwang, Proc. of IRPS, 2005.

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81

International
"Impact of Plasma Induced Damage on PMOSFETs with TiN/Hf-silicate Stack" S.C. Song, S.H. Bae, Z. Zhang, J.H. Sim, B. Sassman, G. Bersuker, P. Zeitzoff, B.H. Lee, Proc. of IRPS, 2005.

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80

International
"ALD HfO2 thickness dependence on charge trapping characteristics in mobility enhancement" J.H. Sim, S.C. Song, P.D. Kirsch, C.D. Young, R. Choi, G. Bersuker, D.L. Kwong, B. H. Lee, Proc. of INFOS, 2005.
79

International
"Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices" Y. Senzaki, K. Choi, P.D. Kirsch, P. Majhi, and B.H. Lee, Characterization and Metrology for ULSI technology, 2005, invited.
2004
78

International
"Recovery of NBTI degradation in HfSiON /Metal Gate Transistors" H. Rusty Harris, R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, P. Zeitzoff, P. Majhi, and G. Bersuker, Integrated Rel. Workshop, 2004.

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77

International
"Polarity dependence of FN Stress induced degradation on NMOSFETs with Polysilicon Gate and HfSiON Gate Dielectrics" R. Choi, B. H. Lee, G. Brown, P. Zeitzoff, J. H. Sim, and J. C. Lee, International symposium on the physical and failure analysis of integrated circuits (IPFA), 2004.

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76

International
"Thermally robust dual-work function ALD-MNx MOSFETs using conventional CMOS process flow" D.-G. Park, Z.J. Luo, N. Edleman, W. Zhu, P. Nguyen, K. Wong, C. Cabral, P. Jamison, B. H. Lee, A. Chou, M. Chudzik, J. Bruley, O. Gluschenkov, P. Ronsheim, A. Chakravarti, R. Mitchel, V. Ku, H. Kim, E. Duch, P. Kozlowski, C.D’Emic,V. Narayanan, A. Steege, Symposium on VLSI Technology, 2004.

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75

International
"Progress Toward High-k and Metal Gate Solutions for CMOS" R.W. Murto, M.I. Gardner, P. Majhi, N. Moumen, B. H. Lee, G.A. Brown, P. M. Zeitzoff, and H.R. Huff, Nano Material conference, 2004.
74

International
"C.Y. Kang, R. Choi, J. H. Sim, C. Young, B. H. Lee, G. Bersuker and Jack C. Lee" Charge Trapping Effects in HfSiON dielectrics on the Ring Oscillator Circuit and the Single Stage Inverter Operation, Tech Dig. of IEDM, 2004.

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73

International
"Intrinsic characteristics of high-k devices and implications of transient charging effects" B.H.Lee, C.D.Young, R.Choi, J.H.Sim, G.Bersuker, C.Y.Kang, R.Harris, G.A.Brown, K.Matthews, S.C.Song, N.Moumen, J.Barnett, P.Lysaght, K.S.Choi, H.C.Wen, C.Huffman, H.Alshareef, P.Majhi, S.Gopalan, J.Peterson, P.Kirsh, H.-J Li, J.Gutt, M.Gardner, H.R.Huff,, Tech.Dig. of IEDM, 2004.

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72

International
"Characterizing Hf-Based Bulk Film Properties Using Ultra-short Pulse I-V Measurement" C.D. Young, R. Choi, B. H. Lee, G. Bersuker, P. Zeitzoff, J.H. Sim, H.R. Harris, and G.A. Brown, SISC, 2004.
71

International
"The frequency dependence of AC stress induced charging and it’s relaxation in TiN/Hf-Silicate NMOSFETs" R. Choi, Rusty Harris, B. H. Lee, K. Matthews, Mike Pendley, Chadwin Young, J. H. Sim, G. Bersuker, SISC, 2004.
70

International
"An Improved Methodology for Gate Electrode Work Function Extraction in SiO2 and High-k Gate Stack Systems Using Terraced Oxide Structures" G. A. Brown, G. Smith, J. Saulters, K. Matthews, H.-C. Wen, H. AlShareef, P. Majhi and B. H. Lee, SISC, 2004.
69

International
"A Study of Charge Trapping Dynamics in HfSiON Dielectrics Using the Single Stage Inverter Circuit" C. Y. Kang, R. Choi, H. Rusty, B. H. Lee, G. Bersuker, and Jack C. Lee, SISC, 2004.
68

International
"Effective Minimization of Charge-trapping in High-k gate Dielectrics with an Ultra-short Pulse Technique" Y. Zhao, C.D. Young, M. Pendley, K. Matthews, B. H. Lee and G.A. Brown, 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.

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67

International
"Mobility Evaluation in High-K Devices" G. Bersuker, P. Zeitzoff, J. Sim, B. H. Lee, R. Choi, G. Brown, C. Young, Integrated Rel. Workshop, 2004.

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