Conferences 16 페이지 | 포항공대 EESL

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Total 516건 16 페이지

2004
66

International
"Hot carrier stress study in Hf-silicate NMOS transistors" J. H. Sim, B. H. Lee, R. Choi, S. C. Songa, C. D. Younga P. Zeitzoffa, D.L. Kwong and G. Bersuker, Integrated Rel. Workshop, 2004.

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65

International
"Effects of drain to gate stress on NMOSFET with polysilicon/Hf-silicate gate stack" R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, G. Bersuker, P. Zeitzoff, Integrated Rel. Workshop, 2004.

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64

International
"Effect of pre-existing defects on reliability assessment of high-k gate dielectrics" G.Bersuker, J.H.Sim, C.Young, R.Choi, P.Zeizoff, G,Brown, B. H. Lee and R.A.Murto, ESREF, 2004.

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63

International
"Electrical and Materials Characterization of Atomic Layer Deposited HfO2 Using Hf[N(CH3)C2H5]4 and O3 on HF Last Surface" P. D. Kirsch, J. Gutt, J. J. Peterson, S. Gopalan, S. Krishnan, H.-J. Li, P.Y. Hung, M. C. Chudzik, M. Gardner, B. H. Lee and H. R. Huff, 11th Workshop on oxide electronics, 2004.
62

International
"Effect of Underlying Dielectric Film on the ALD-TiN film Properties" K. Choi, H.-C. Wen, P. Majhi, and B. H. Lee, 11th Workshop on oxide electronics, 2004.
61

International
"Effects of NH3 pre-anneal deposition on ALD high-k gate stacks" N. Moumen, J.J. Peterson, J. Barnett, B. H. Lee, J.H. Sim, R.W. Murto, G. Bersuker and H.R. Huff, Electrochemical Society Symposium, 2004.

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60

International
"Enhanced Surface Preparation Techniques for the Si/High-k Interface" J. Barnett, Chadwin D. Young, N. Moumen, G. Bersuker, J.J. Peterson, G.A. Brown, B. H. Lee and H. Huff, UCPSS, 2004.
59

International
"Enhanced Surface Preparation Techniques for the Si/High-k Interface" J. Barnett, C. D. Young, N. Moumen, G. Bersuker, J. J. Peterson, G. A. Brown, B. H. Lee, and H. R. Huff, Ultra Clean Processing of Silicon Surfaces Conference VII, Solid State Phenomena, 2004.
58

International
"Temperature effect of constant bias stress on MOSFET with HfSiON gate dielectric" R. Choi, B. H. Lee, J.H. Sim, G. Bersuker and G.A. Brown, SSDM, 2004.
57

International
"Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode" J.H. Sim, R. Choi, B. H. Lee, Chadwin Young and G. Bersuker, SSDM, 2004.

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56

International
"Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-k Devices" C. D. Young, Y. Zhao, M. Pendley, B. H. Lee, K. Matthews, J.H. Sim, R. Choi, G. Bersuker, and G.A. Brown, SSDM, 2004.
55

International
"Effects of high pressure hydrogen and deuterium anneal on TiN gate nMOSFET with Hf-base gate dielectrics" H.K. Park, B. H. Lee, M. Gardner, and H. Hwang, SSDM, 2004.
54

International
"Transient charging in high-k gate dielectrics and it’s implications" B.H. Lee, C. Young, R. Choi, J.H. Sim, G. Bersuker and P. Zeitzoff, SSDM, 2004.
53

International
"Hot carrier reliability of HfSiON PMOSFETs with Metal gate" J.H.Sim, B. H. Lee, R.Choi, K.Matthew, P.Zeitzoff, and G.Bersuker, International symposium on the physical and failure analysis of integrated circuits (IPFA), 2004.

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52

International
"Comparative Study of Trapping Characteristics of HfSiON Dielectric in nMOSFETs with Poly-Si or TiN as Gate Electrode" D. C. Guo, L.Y. Song, X.W. Wang, T. P. Ma, B. H. Lee, S.Gopalan, R.Choi, Electronic Materials Conference, 2004.
51

International
"Dual Metal Gate CMOS Using CVD Metal Gate Electrode" V. Narayanan, C.Cabral, F.R. McFeely, A.C. Callegari, S.Zafar, P.C. Jamison, A.L.Steegen, M.Gribelyuk, E. Cartier, V. Ku, P.Nguyen, A.Vayshenker, Y. Li, B. H. Lee, S.Guha, E.Gousev, M. Copel, D. Neumayer, R. Jammy, M. Ieong, W. Haensch, G.Shahidi, Electronic Material Conference, 2004.
50

International
"Hot Carrier Reliability of HfSiON NMOSFETs with Poly and TiN metal gate" J. H. Sim, B. H. Lee, R. Choi, K. Matthews, D.L. Kwong , P. Tsui, and G. Bersuker, Proc. of Device Research Conference, 2004.

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49

International
"Relaxation of FN stress induced Vth shift in nMOSFETs with HfSiON and TiN gate" R.Choi, B. H. Lee, J.H.Sim, G.Bersuker, L.Larson, J.C.Lee, Proc. of Device Research Conference, 2004.

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48

International
"A Model for Negative Bias Temperature Instability (NBTI) in Oxide and High-k pFETs" S. Zafar, B. H. Lee, J. Stathis and T. Ning, Symposium on VLSI Technology, 2004.

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47

International
"Towards 0.5 nm EOT Scaling of HfO2 / Metal Electrode Gate Stacks" J. J. Peterson, G. A. Brown, K. Matthews, J. Gutt, S. Gopalan, H.J. Li, J. Barnett, N. Moumen, P. Majhi, N. Chaudhary, C. D. Young, B. Sassman, B. H. Lee, G. Bersuker, P. M. Zeitzoff, P. Lysaght, M. Gardner and H. R. Huff, ECS Fall meeting, 2004.

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46

International
"Localized transient charging and it’s implication on the hot carrier reliability of HfSiON MOSFETs" B.H.Lee, J.H.Sim, R.Choi, K.Matthew, G.Bersuker, N.Moumen, J.Peterson and L.Larson, IRPS, 2004.

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45

International
"Integration Issues of High-K Gate Stack: Process-Induced Charging”, International Reliability Physics Symposium" G. Bersuker, J. Gutt, N. Chaudhary, N. Moumen, B. H. Lee, J. Barnett, S. Gopalan, J. Peterson, H.-J. Li, P. M. Zeitzoff, G.A. Brown, Y . Kim, C. D. Young, J. H. Sim, P. Lysaght, M. Gardner, R. W. Murto, and H. R. Huff, 2004, 2004.

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44

International
"Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance" G. Bersuker, J. H. Sim, C. D. Young, R. Choi, B. H. Lee, P. Lysaght, G. A. Brown, P. M. Zeitzoff, M. Gardner, R. W. Murto and H. R. Huff, MRS spring meeting, 2004.
43

International
"Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface" J. Barnett, N. Moumen, J. Gutt, M. Gardner, C. Huffman, P. Majhi, J.J. Peterson, S. Gopalan, B. Foran, H.-J. Li, B. H. Lee, G. Bersuker, P. M. Zeitzoff, G.A. Brown, P. Lysaght, C. Young, R.W. Murto, and H. R. Huff, MRS spring meeting, 2004.
42

International
"Novel High-K Gate Stacks for Future Transistor Generations" G.Bersuker, B. H. Lee and Howard Huff, Workshop on Future Electronics, 2004.
41

International
"Comparison of ALD and MOCVD deposition processes for deposition of Hafnium Silicate" S.A. Krishnan, Paul D. Kirsch, B. H. Lee, J.J. Peterson, H.J. Li, J. Gutt, Texas section of American Physical Society conference, 2004.
2003
40

International
"High Performance CMOS Devices on SOI for 90 nm Technology Enhanced by RSD (Raised Source/Drain) and Thermal Cycle/Spacer Engineering" H. Park, W. Rausch, H. Utomo, K. Matsumoto, H. Nii, S. Kawanaka, P. Fisher, S-H. Oh, J. Snare, W. Clark, A.C. Mocuta, J. Holt, R. Mo, T. Sato , D. Mocuta, B. H. Lee, O. Dokumaci, P. O’Neil, D. Brown, J. Suenaga, Y. Li, L. Brown , J. Nakos,K. Hathorn, P. R, Tech. Dig. of Int. Electron Device Meetings, 2003.

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39

International
"W/HfO2 gate stacks with Tinv~1.2nm and low charge trapping" Callegari, P.Jamison, B. H. Lee, D.Neumayer, V.Narayanan, S.Zafar, E.Gusev, C.D’Emic, D.Lacey, M.Gribelyuk, C.Cabral, A.Steegen, V.Ku, R.Amos, Y.Li, P.Nguyen, F.McFeely, G.Singer, J.Cai, S.-H.Ku, Y.Y.Wang, C.Wajda, D.O’Meam, H.Shinriki, and T.Takahashi, Ext. Abs. of SSDM, 2003.
38

International
"Strained Si MOSFETs on SiGe-on-Insulator (SGOI) for High Performance CMOS Technology" K. Rim, B. H. Lee, A. Mocuta, K. Jenkins, S. Bedell, H. Chen, D. Sadana, M. Gribelyuk, J. Ott, K. Chan, L. Shi, J. Chu, D. Boyd, P. Mooney, P. O’Neil, and J. Welser, Ext. Abs. of SSDM, 2003, Invited.
37

International
"Effect of surface preparation on high-k gate stack performance" N. Moumen, J. Barnett, R.W. Murto, M. Gardner, B. H. Lee e, J.J. Peterson, G. Bersuker and H. R. Huff, Proceedings of ECS symposium, 2003.

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