Conferences 17 페이지 | 포항공대 EESL

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Total 516건 17 페이지

2002
36

International
"Performance enhancement on sub-70nm strained silic0on SOI MOSFETs on Ultra-thin Thermally Mixed Strained silicon/SiGe on Insulator(TM-SGOI) substrate with Raised S/D" B.H. Lee, A. Mocuta, S. Bedell, H. Chen, D. Sadana, K. Rim, P. O’Neil, R. Mo, K. Chan, C. Cabral, C. Lavoie, D. Mocuta, A.Chakravarti, R.M.Mitchell, J. Mezzapelle, F. Jamin, M. Sendelbach, H.Kermel, M.Gribelyuk, A. Domenicucci, S.Narasimha, S.H. Ku, M. Ie, Tech Dig. of Int. Electron Device Meetings, 2002, Late news paper.

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35

International
"Gate Postdoping to Decouple Implant/Anneal for Gate, Source/Drain, and Extension:Maximizing Polysilicon Gate Activation for 0.1 µm CMOS Technologies" H. Park, D. Schepis, A.C. Mocuta, M. Khare, Y. Li, B. Doris, S. Shukla, T. Hughes, O. Dokumaci, S. Narasimha, S. Fung, J. Snare, B. H. Lee, J. Li, P. Ronsheim, A. Domenicucci, P. Varekamp, A. Ajmera, J. Sleight, P. O'Neil, E. Maciejewski, C. Lavoie, Tech. Dig. of VLSI Symposium, 2002.

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34

International
"Mobility Enhancement in Strained Si NMOSFETs with HfO2 Gate Dielectrics" K. Rim, E.P. Gusev, C. D’Emic, H. Chen, J. Chu, J. Ott, B. H. Lee, A. Mocuta, K. Chan, T. Kanarsky, D. Boyd, V. Mazzeo, M. Ieong, S.L. Cohen, H.-S. Wong, Tech. Dig. of VLSI Symposium, 2002.

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33

International
"Strained Si CMOS (SS CMOS) Technology: Opportunities and Challenges" K.Rim, R.Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, J. Chu, M. Hargrove, L. Huang, K. Jenkins, T. Kanarsky, S. Koester, B. H. Lee, K. Lee, V. Mazzeo, A. Mocuta, D. Mocuta, P. Mooney,P. Oldiges, J. Ott, P. Ronsheim, R. Roy, A. Steegen, M. Yang, H. Zh, ULSI symposium, 2002.
2001
32

International
"Effects of Hf and Zr implanted into Si substrates on the electrical properties of MOS devices" C.S. Kang, L.Kang, B. H. Lee, Y. Jeon, W. Qi, R. Nieh, K.Onishi, S. Gopalan, R. Choi, E. Dharmarajan, and J. C. Lee, AIP conference, 2001.
31

International
"High-quality ultrathin HfO2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation" R. Choi, C.S.Kang, B. H. Lee, K.Onishi, R.Nieh, S.Gopalan, E.Dhamarajan, and J.C.Lee, Proceeding of Symposium VLSI Technology, 2001, Highlight session paper.

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30

International
"High-K Gate Dielectrics: ZrO2, HfO2, and Their Silicates" J.C. Lee, R. Nieh, B. H. Lee, L. Kang, K. Onishi, Y. Jeon, E. Dharmarjan, S. Gopalan, C.S. Kang, and R. Choi, ECS symposium on Gate Stacks for Nanoscale CMOS I, 2001, invited.
2000
29

International
"Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8Å-12Å)" B. H. Lee, R. Choi, L. Kang, S. Gopalan, R. Nieh, K. Onishi, Y.Jeon, W. Qi, C. Kang, and J. C. Lee, Tech Dig. of Int. Electron Device Meetings, 2000.

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28

International
"MOSFET Devices with Polysilicon Electrode on Single-Layer HfO2 High-K Dielectrics" L. Kang, K. Onishi, Y.Jeon, B. H. Lee, C.S> Kang; W.-J. Qi, R. Nieh, S. Gopalan; R. Choi, Jack C. Lee, Tech. Dig. of International Electron Device Meetings, 2000.

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27

International
"Single-layer thin HfO2 gate dieletric with n+-polysilicon gate" L. Kang, Y. Jeon, K. Onishi, B. H. Lee, W. Qi, R. Nieh, S. Gopalan, and J.C. Lee, Proc. of Symposium on VLSI technology, 2000.

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26

International
"Performance of MOSFETs with ultrathin ZrO2 and Zr silicate gate dieletrics" W. Qi, R. Nieh, B. H. Lee, K. Onishi, L. Kang, Y. Jeon, V. Kaushik, B.-Y. Neuyen, L. Prabhu, K. Eisenbeiser, J. Finder, and J. C. Lee, Proc. of Symposium on VLSI technology, 2000.

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25

International
"Rotating compensator spectroscopic ellipsometry (RCSE) and its application to high k dielectric film HfO2" J. Leng, S. Li, J.L Opsal, D.E. Aspnes, B. H. Lee, J.C. Lee, Proc. SPIE - Int. Soc. Opt. Eng. (USA), 2000.
24

International
"Processing effect and electrical characteristics of ZrO2 formed by RTP oxidation of Zr" R. Nieh, W. Qi, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, and J. C. Lee, ECS spring meeting, Ontario, 2000.

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23

International
"Hafnium and Zirconium based High-k dielectrics" J.C. Lee, B. H. Lee, K. Onishi, L. Kang, Y. Jeon, R. Nieh, W. Qi, and R. Choi, MRS workshop on High-k gate dielectrics, New Orleans, 2000, invited.
22

International
"Temperature effect on the reliability of ZrO2 gate dielectric deposited directly on silicon" W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, S. Gopalan, and J. C. Lee, Proceedings of International Reliability Physics Symposium, 2000.

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21

International
"ZrO2 , Zr-silicate, and HfO2 Gate Dielectrics" J. Lee, B. H. Lee, W.Qi, R.Nieh, L.Kang, Y.Jeon, and K.Onishi, the Paris Future Development Conference, 2000, invited.
20

International
"Interface between c-Si and the High-k dielectric HfO2: Characterization by rotating compensator spectroscopic ellipsometry (RCSE)" J. Leng, S.Li, J.Opsal, B. H. Lee, and J. C. Lee, Proceedings of AVS First International Conference on Microelectronics and Interfaces, Pheonix, Arizona, 2000.
1999
19

International
"High-k dielectrics" W.-J. Qi, B. H. Lee, R. Nieh, L. Kang, Y. Jeon, K. Onishi, and J.C. Lee, Proc. SPIE Int. Soc. Opt. Eng., 1999.
18

International
"MOSCAP and MOSFET characteristics using ZrO2 gate dielectric deposited directly on Si" W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Nagai, S. Banerjee, and J. C. Lee, Tech. Dig. of Int. Electron Device Meetings, 1999.

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17

International
"Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric applications" B. H. Lee, L. Kang, W. Qi, R. Nieh, K. Onishi, and J. C. Lee, Tech. Dig. of Int. Electron Device Meetings, 1999.

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16

International
"Electrical characteristics of ultra-thin hafnium oxide gate dielectric" B. H. Lee, L. Kang, W. Qi, R. Nieh, Y. Jeon, and J. C. Lee, Discussed at 30th IEEE SISC, 1999.
15

International
"Highly reliable thin Hafnium oxide gate dielectric" L. Kang, B. H. Lee, W. Qi, Y. Jeon, R. Nieh, S. Gopalan, and J. C. Lee, Proceedings of MRS Fall Meeting, 1999.
14

International
"A study on Hysteresis Effect of Barrium Strontium Titanate Thin Films for Alternative Gate Dielectric Application" W. Qi, K. Zawadzki, R. Nieh, Y. Jeon, B. H. Lee, A. Lucas, L. Kang, and J. Lee, Proceedings of MRS Fall Meeting, 1999.
13

International
"Study on ZrO2 deposited on Si as an alternative gate dielectric material" W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi and J.C. Lee, MRS Fall Meeting, 1999.
12

International
"Nitrogen implantation to suppress growth of interfacial oxide in MOCVD BST and sputtered BST films" R. Nieh, W.-J. Qi, Y. Jeon, B. H. Lee e, A. Lucas and J. C. Lee, MRS spring meeting, 1999.
1998
11

International
"Effect of Barrier layer on the Electrical and Reliability Characteristics of High-k gate dielectric films" Y. Jeon, B. H. Lee, K. Zawadzki, W.Qi, A. Lucas, R. Nieh and J. Lee, Tech. Dig. of Int. Electron Device Meetings, 1998.

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10

International
"Comparative study of TiO2 and Ta2O5 on JVD nitride as an alternative gate dielectrics" B. H. Lee, Y. Jeon, A. Lucas, M. Gilmer, M. Gardner, J. Fair and J. C. Lee, Proceedings of 29th IEEE SISC, 1998.
9

International
"Leakage characteristics of TiO2 films" B.H. Lee, Y. Jeon, K. Zawadzki, W.-J. Qi, R. Nieh, A. Lucas and J. Lee, Proceedings of American Vacuum Society Symposium, 1998.
8

International
"Sputtered BST Thin Films for Alternative High K Gate Dielectrics" K. Zawadzki, W.-J. Qi, Y. Jeon, B. H. Lee, A. Lucas, R. Nieh, and J. Lee, Proceedings of American Vacuum Society Symposium, 1998.
7

International
"Alternative Gate Dielectric with BST/TiO2(Barrier Layer) Stacked Structure" Y. Jeon, K. Zawadzki, B. H. Lee, V. Balu, and J.C. Lee, MRS Symposium on Rapid thermal and Integrated processing VII, 1998.

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