Conferences 17 페이지 | 포항공대 EESL

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Total 534건 17 페이지

2004
54

International
"Transient charging in high-k gate dielectrics and it’s implications" B.H. Lee, C. Young, R. Choi, J.H. Sim, G. Bersuker and P. Zeitzoff, SSDM, 2004.
53

International
"Hot carrier reliability of HfSiON PMOSFETs with Metal gate" J.H.Sim, B. H. Lee, R.Choi, K.Matthew, P.Zeitzoff, and G.Bersuker, International symposium on the physical and failure analysis of integrated circuits (IPFA), 2004.

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52

International
"Comparative Study of Trapping Characteristics of HfSiON Dielectric in nMOSFETs with Poly-Si or TiN as Gate Electrode" D. C. Guo, L.Y. Song, X.W. Wang, T. P. Ma, B. H. Lee, S.Gopalan, R.Choi, Electronic Materials Conference, 2004.
51

International
"Dual Metal Gate CMOS Using CVD Metal Gate Electrode" V. Narayanan, C.Cabral, F.R. McFeely, A.C. Callegari, S.Zafar, P.C. Jamison, A.L.Steegen, M.Gribelyuk, E. Cartier, V. Ku, P.Nguyen, A.Vayshenker, Y. Li, B. H. Lee, S.Guha, E.Gousev, M. Copel, D. Neumayer, R. Jammy, M. Ieong, W. Haensch, G.Shahidi, Electronic Material Conference, 2004.
50

International
"Hot Carrier Reliability of HfSiON NMOSFETs with Poly and TiN metal gate" J. H. Sim, B. H. Lee, R. Choi, K. Matthews, D.L. Kwong , P. Tsui, and G. Bersuker, Proc. of Device Research Conference, 2004.

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49

International
"Relaxation of FN stress induced Vth shift in nMOSFETs with HfSiON and TiN gate" R.Choi, B. H. Lee, J.H.Sim, G.Bersuker, L.Larson, J.C.Lee, Proc. of Device Research Conference, 2004.

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48

International
"A Model for Negative Bias Temperature Instability (NBTI) in Oxide and High-k pFETs" S. Zafar, B. H. Lee, J. Stathis and T. Ning, Symposium on VLSI Technology, 2004.

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47

International
"Towards 0.5 nm EOT Scaling of HfO2 / Metal Electrode Gate Stacks" J. J. Peterson, G. A. Brown, K. Matthews, J. Gutt, S. Gopalan, H.J. Li, J. Barnett, N. Moumen, P. Majhi, N. Chaudhary, C. D. Young, B. Sassman, B. H. Lee, G. Bersuker, P. M. Zeitzoff, P. Lysaght, M. Gardner and H. R. Huff, ECS Fall meeting, 2004.

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46

International
"Localized transient charging and it’s implication on the hot carrier reliability of HfSiON MOSFETs" B.H.Lee, J.H.Sim, R.Choi, K.Matthew, G.Bersuker, N.Moumen, J.Peterson and L.Larson, IRPS, 2004.

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45

International
"Integration Issues of High-K Gate Stack: Process-Induced Charging”, International Reliability Physics Symposium" G. Bersuker, J. Gutt, N. Chaudhary, N. Moumen, B. H. Lee, J. Barnett, S. Gopalan, J. Peterson, H.-J. Li, P. M. Zeitzoff, G.A. Brown, Y . Kim, C. D. Young, J. H. Sim, P. Lysaght, M. Gardner, R. W. Murto, and H. R. Huff, 2004, 2004.

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44

International
"Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance" G. Bersuker, J. H. Sim, C. D. Young, R. Choi, B. H. Lee, P. Lysaght, G. A. Brown, P. M. Zeitzoff, M. Gardner, R. W. Murto and H. R. Huff, MRS spring meeting, 2004.
43

International
"Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface" J. Barnett, N. Moumen, J. Gutt, M. Gardner, C. Huffman, P. Majhi, J.J. Peterson, S. Gopalan, B. Foran, H.-J. Li, B. H. Lee, G. Bersuker, P. M. Zeitzoff, G.A. Brown, P. Lysaght, C. Young, R.W. Murto, and H. R. Huff, MRS spring meeting, 2004.
42

International
"Novel High-K Gate Stacks for Future Transistor Generations" G.Bersuker, B. H. Lee and Howard Huff, Workshop on Future Electronics, 2004.
41

International
"Comparison of ALD and MOCVD deposition processes for deposition of Hafnium Silicate" S.A. Krishnan, Paul D. Kirsch, B. H. Lee, J.J. Peterson, H.J. Li, J. Gutt, Texas section of American Physical Society conference, 2004.
2003
40

International
"High Performance CMOS Devices on SOI for 90 nm Technology Enhanced by RSD (Raised Source/Drain) and Thermal Cycle/Spacer Engineering" H. Park, W. Rausch, H. Utomo, K. Matsumoto, H. Nii, S. Kawanaka, P. Fisher, S-H. Oh, J. Snare, W. Clark, A.C. Mocuta, J. Holt, R. Mo, T. Sato , D. Mocuta, B. H. Lee, O. Dokumaci, P. O’Neil, D. Brown, J. Suenaga, Y. Li, L. Brown , J. Nakos,K. Hathorn, P. R, Tech. Dig. of Int. Electron Device Meetings, 2003.

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39

International
"W/HfO2 gate stacks with Tinv~1.2nm and low charge trapping" Callegari, P.Jamison, B. H. Lee, D.Neumayer, V.Narayanan, S.Zafar, E.Gusev, C.D’Emic, D.Lacey, M.Gribelyuk, C.Cabral, A.Steegen, V.Ku, R.Amos, Y.Li, P.Nguyen, F.McFeely, G.Singer, J.Cai, S.-H.Ku, Y.Y.Wang, C.Wajda, D.O’Meam, H.Shinriki, and T.Takahashi, Ext. Abs. of SSDM, 2003.
38

International
"Strained Si MOSFETs on SiGe-on-Insulator (SGOI) for High Performance CMOS Technology" K. Rim, B. H. Lee, A. Mocuta, K. Jenkins, S. Bedell, H. Chen, D. Sadana, M. Gribelyuk, J. Ott, K. Chan, L. Shi, J. Chu, D. Boyd, P. Mooney, P. O’Neil, and J. Welser, Ext. Abs. of SSDM, 2003, Invited.
37

International
"Effect of surface preparation on high-k gate stack performance" N. Moumen, J. Barnett, R.W. Murto, M. Gardner, B. H. Lee e, J.J. Peterson, G. Bersuker and H. R. Huff, Proceedings of ECS symposium, 2003.

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2002
36

International
"Performance enhancement on sub-70nm strained silic0on SOI MOSFETs on Ultra-thin Thermally Mixed Strained silicon/SiGe on Insulator(TM-SGOI) substrate with Raised S/D" B.H. Lee, A. Mocuta, S. Bedell, H. Chen, D. Sadana, K. Rim, P. O’Neil, R. Mo, K. Chan, C. Cabral, C. Lavoie, D. Mocuta, A.Chakravarti, R.M.Mitchell, J. Mezzapelle, F. Jamin, M. Sendelbach, H.Kermel, M.Gribelyuk, A. Domenicucci, S.Narasimha, S.H. Ku, M. Ie, Tech Dig. of Int. Electron Device Meetings, 2002, Late news paper.

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35

International
"Gate Postdoping to Decouple Implant/Anneal for Gate, Source/Drain, and Extension:Maximizing Polysilicon Gate Activation for 0.1 µm CMOS Technologies" H. Park, D. Schepis, A.C. Mocuta, M. Khare, Y. Li, B. Doris, S. Shukla, T. Hughes, O. Dokumaci, S. Narasimha, S. Fung, J. Snare, B. H. Lee, J. Li, P. Ronsheim, A. Domenicucci, P. Varekamp, A. Ajmera, J. Sleight, P. O'Neil, E. Maciejewski, C. Lavoie, Tech. Dig. of VLSI Symposium, 2002.

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34

International
"Mobility Enhancement in Strained Si NMOSFETs with HfO2 Gate Dielectrics" K. Rim, E.P. Gusev, C. D’Emic, H. Chen, J. Chu, J. Ott, B. H. Lee, A. Mocuta, K. Chan, T. Kanarsky, D. Boyd, V. Mazzeo, M. Ieong, S.L. Cohen, H.-S. Wong, Tech. Dig. of VLSI Symposium, 2002.

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33

International
"Strained Si CMOS (SS CMOS) Technology: Opportunities and Challenges" K.Rim, R.Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, J. Chu, M. Hargrove, L. Huang, K. Jenkins, T. Kanarsky, S. Koester, B. H. Lee, K. Lee, V. Mazzeo, A. Mocuta, D. Mocuta, P. Mooney,P. Oldiges, J. Ott, P. Ronsheim, R. Roy, A. Steegen, M. Yang, H. Zh, ULSI symposium, 2002.
2001
32

International
"Effects of Hf and Zr implanted into Si substrates on the electrical properties of MOS devices" C.S. Kang, L.Kang, B. H. Lee, Y. Jeon, W. Qi, R. Nieh, K.Onishi, S. Gopalan, R. Choi, E. Dharmarajan, and J. C. Lee, AIP conference, 2001.
31

International
"High-quality ultrathin HfO2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation" R. Choi, C.S.Kang, B. H. Lee, K.Onishi, R.Nieh, S.Gopalan, E.Dhamarajan, and J.C.Lee, Proceeding of Symposium VLSI Technology, 2001, Highlight session paper.

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30

International
"High-K Gate Dielectrics: ZrO2, HfO2, and Their Silicates" J.C. Lee, R. Nieh, B. H. Lee, L. Kang, K. Onishi, Y. Jeon, E. Dharmarjan, S. Gopalan, C.S. Kang, and R. Choi, ECS symposium on Gate Stacks for Nanoscale CMOS I, 2001, invited.
2000
29

International
"Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8Å-12Å)" B. H. Lee, R. Choi, L. Kang, S. Gopalan, R. Nieh, K. Onishi, Y.Jeon, W. Qi, C. Kang, and J. C. Lee, Tech Dig. of Int. Electron Device Meetings, 2000.

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28

International
"MOSFET Devices with Polysilicon Electrode on Single-Layer HfO2 High-K Dielectrics" L. Kang, K. Onishi, Y.Jeon, B. H. Lee, C.S> Kang; W.-J. Qi, R. Nieh, S. Gopalan; R. Choi, Jack C. Lee, Tech. Dig. of International Electron Device Meetings, 2000.

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27

International
"Single-layer thin HfO2 gate dieletric with n+-polysilicon gate" L. Kang, Y. Jeon, K. Onishi, B. H. Lee, W. Qi, R. Nieh, S. Gopalan, and J.C. Lee, Proc. of Symposium on VLSI technology, 2000.

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26

International
"Performance of MOSFETs with ultrathin ZrO2 and Zr silicate gate dieletrics" W. Qi, R. Nieh, B. H. Lee, K. Onishi, L. Kang, Y. Jeon, V. Kaushik, B.-Y. Neuyen, L. Prabhu, K. Eisenbeiser, J. Finder, and J. C. Lee, Proc. of Symposium on VLSI technology, 2000.

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25

International
"Rotating compensator spectroscopic ellipsometry (RCSE) and its application to high k dielectric film HfO2" J. Leng, S. Li, J.L Opsal, D.E. Aspnes, B. H. Lee, J.C. Lee, Proc. SPIE - Int. Soc. Opt. Eng. (USA), 2000.

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