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Total 533건 18 페이지

2000
23

International
"Hafnium and Zirconium based High-k dielectrics" J.C. Lee, B. H. Lee, K. Onishi, L. Kang, Y. Jeon, R. Nieh, W. Qi, and R. Choi, MRS workshop on High-k gate dielectrics, New Orleans, 2000, invited.
22

International
"Temperature effect on the reliability of ZrO2 gate dielectric deposited directly on silicon" W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, S. Gopalan, and J. C. Lee, Proceedings of International Reliability Physics Symposium, 2000.

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21

International
"ZrO2 , Zr-silicate, and HfO2 Gate Dielectrics" J. Lee, B. H. Lee, W.Qi, R.Nieh, L.Kang, Y.Jeon, and K.Onishi, the Paris Future Development Conference, 2000, invited.
20

International
"Interface between c-Si and the High-k dielectric HfO2: Characterization by rotating compensator spectroscopic ellipsometry (RCSE)" J. Leng, S.Li, J.Opsal, B. H. Lee, and J. C. Lee, Proceedings of AVS First International Conference on Microelectronics and Interfaces, Pheonix, Arizona, 2000.
1999
19

International
"High-k dielectrics" W.-J. Qi, B. H. Lee, R. Nieh, L. Kang, Y. Jeon, K. Onishi, and J.C. Lee, Proc. SPIE Int. Soc. Opt. Eng., 1999.
18

International
"MOSCAP and MOSFET characteristics using ZrO2 gate dielectric deposited directly on Si" W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Nagai, S. Banerjee, and J. C. Lee, Tech. Dig. of Int. Electron Device Meetings, 1999.

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17

International
"Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric applications" B. H. Lee, L. Kang, W. Qi, R. Nieh, K. Onishi, and J. C. Lee, Tech. Dig. of Int. Electron Device Meetings, 1999.

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16

International
"Electrical characteristics of ultra-thin hafnium oxide gate dielectric" B. H. Lee, L. Kang, W. Qi, R. Nieh, Y. Jeon, and J. C. Lee, Discussed at 30th IEEE SISC, 1999.
15

International
"Highly reliable thin Hafnium oxide gate dielectric" L. Kang, B. H. Lee, W. Qi, Y. Jeon, R. Nieh, S. Gopalan, and J. C. Lee, Proceedings of MRS Fall Meeting, 1999.
14

International
"A study on Hysteresis Effect of Barrium Strontium Titanate Thin Films for Alternative Gate Dielectric Application" W. Qi, K. Zawadzki, R. Nieh, Y. Jeon, B. H. Lee, A. Lucas, L. Kang, and J. Lee, Proceedings of MRS Fall Meeting, 1999.
13

International
"Study on ZrO2 deposited on Si as an alternative gate dielectric material" W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi and J.C. Lee, MRS Fall Meeting, 1999.
12

International
"Nitrogen implantation to suppress growth of interfacial oxide in MOCVD BST and sputtered BST films" R. Nieh, W.-J. Qi, Y. Jeon, B. H. Lee e, A. Lucas and J. C. Lee, MRS spring meeting, 1999.
1998
11

International
"Effect of Barrier layer on the Electrical and Reliability Characteristics of High-k gate dielectric films" Y. Jeon, B. H. Lee, K. Zawadzki, W.Qi, A. Lucas, R. Nieh and J. Lee, Tech. Dig. of Int. Electron Device Meetings, 1998.

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10

International
"Comparative study of TiO2 and Ta2O5 on JVD nitride as an alternative gate dielectrics" B. H. Lee, Y. Jeon, A. Lucas, M. Gilmer, M. Gardner, J. Fair and J. C. Lee, Proceedings of 29th IEEE SISC, 1998.
9

International
"Leakage characteristics of TiO2 films" B.H. Lee, Y. Jeon, K. Zawadzki, W.-J. Qi, R. Nieh, A. Lucas and J. Lee, Proceedings of American Vacuum Society Symposium, 1998.
8

International
"Sputtered BST Thin Films for Alternative High K Gate Dielectrics" K. Zawadzki, W.-J. Qi, Y. Jeon, B. H. Lee, A. Lucas, R. Nieh, and J. Lee, Proceedings of American Vacuum Society Symposium, 1998.
7

International
"Alternative Gate Dielectric with BST/TiO2(Barrier Layer) Stacked Structure" Y. Jeon, K. Zawadzki, B. H. Lee, V. Balu, and J.C. Lee, MRS Symposium on Rapid thermal and Integrated processing VII, 1998.
1996
6

International
"Spectrophotometry and Beam Profile Reflectometry Measurement of Six layers in a SOI Film Stack" J.M. Leng, J.J. Sidorowich, Y.D. Yoon, J. Opsal, B. H. Lee, G. Cha, J. Moon, and S.I. Lee, Proceedings of SPIE symposium on Microelectronic Manufacturing, 1996.
5

International
"Advanced Integration Technology for a Highly Scalable SOI DRAM with SOC(Silicon-On-Capacitor)" I.K. Kim, S.I. Yu, W.T. Kang, K.H. Yeom, Y.K. Kim, J.H. Lee, K.C. Park, B. H. Lee, K.W. Lee, G.Cha, S.I. Lee, T.E.Shim and J.W . Park, Tech. Dig. of IEDM, 1996.

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4

International
"A Novel Pattern Transfer Process for Bonded SOI Giga-bit DRAMs" B.H. Lee, G.J. Bae, G. Cha, W.D. Kim, S.I. Lee, T. Barge, A.J. Auberton-Herve, and J.M. Lamure, Proceedings of 22nd IEEE International SOI Conference, 1996.

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3

International
"Vacuum Bonding for the Fabrication of PBSOI" G. Cha, B. H. Lee, K.W. Lee, G.J. Bae, J. Moon, and S.I. Lee, International Conference on Solid State Devices and Materials, 1996.
2

International
"Post CMP Cleaning for Dielectrically Isolated SOI wafers" G.J. Bae, B. H. Lee, G. Cha, S.I. Lee, ECS Symposium on Chemical Mechanical Planarization, 1996.
1995
1

International
"A Novel CMP Method for Cost-effective Bonded SOI Wafer fabrication" B.H. Lee, C.J. Kang, J.H. Lee, S.I. Yu, K.W. Lee, K.C. Park and T.E. Shim, Proceedings of 21st IEEE International SOI Conference, 1995.

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