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Total 58건 1 페이지

2005
58

International
"Polarity dependence of FN Stress induced degradation on NMOSFETs with Polysilicon Gate and HfSiON Gate Dielectrics" R. Choi, B. H. Lee, G. Brown, P. Zeitzoff, J. H. Sim, and J. C. Lee, International symposium on the physical and failure analysis of integrated circuits (IPFA), 2004.

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57

International
"High Mobility HfSiON Gate Dielectric for High Performance Applications with Minimal Charge Trapping and Suppressed Crystallization" M.A. Quevedo-Lopez, S.A. Krishnan, P.D. Kirsch, H.J. Li, J.H. Sim, C. Huffman, J. Peterson, B.H. Lee, G. Pant, B.E. Gnade, M.J. Kim, R.M. Wallace, D. Guo, H. Bu, T.P. Ma, Tech. Dig. of IEDM, 2005.
56

International
"Electrical and Reliability characteristics of HfSiO MOSFET annealed in F2 ambient" M. Chang, M. Jo, H. Park, M.S. Rahman and B.H. Lee, R. Choi, H. Hwang, SISC, 2005.
55

International
"Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2" M.S. Rahman, H. Park, M. Chang, B.H. Lee, R. Choi, H. Hwang, SISC, 2005.
54

International
"Fast relaxation behavior and its implication on the measurement in high-k gate dielectric" R. Choi, B.H. Lee, K. Mathur, C.D. Young, G. Bersuker, Y. Zhao, SISC, 2005.
53

International
"Process-Induced Work Function Modulations of TaxAl1-xNy Metal Gate Electrodes" H.N. Alshareef, K. Choi, H.C. Wen, R. Harris, H.F. Luan, M. Quevedo-Lopez, P. Majhi, B.H. Lee, SISC, 2005.
52

International
"Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2" M.S. Rahman, H. Park, M. Chang, B.H. Lee, R. Choi, H. Hwang, SISC, 2005.
51

International
"Electrical and Reliability characteristics of HfSiO MOSFET annealed in F2 ambient" M. Chang, M. Jo, H. Park, M.S. Rahman, B.H. Lee, R. Choi, H. Hwang, SISC, 2005.
50

International
"Spectroscopic analysis of the process dependent microstructure of ultra-thin high-k gate dielectric film systems" P.S. Lysaght, J. Barnett, B. Foran, M. Quevedo, P. Kirsch, G. Bersuker, M. Gardner, B.H. Lee, L. Larson, 5th International Symposium on Atomic Layer Characterization for New Materials and Devices, 2005.

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49

International
"Material Characterization of TEMAHf and HfCl4 HfO2 ALD to Enable Dielectric Scaling, Improved Electron Mobility and Vth Stability" P.D. Kirsch, H.-J. Li, J. Peterson, M. Quevedoc, Y. Senzaki, N. Moumen, S.C. Song, B.H. Lee, AVS ALD symposium, 2005.
48

International
"The Effective Work Function of Plasma Injection-Atomic Layer Deposition (PI-ALD) Metal Nitride Electrodes on High-k Dielectric Materials" K. Choi, P. Lysaght, H. Alshareef, H.-C. Wen, R. Harris, H. Luan, P. Majhi, Y. Senzaki, B.H. Lee, S.K. Lee, S.I. Lee, AVS ALD symposium, 2005.
47

International
"Detection of Trap Generation in High-k Gate Stacks due to Constant Voltage Stress" C.D. Young, D. Heh, S. Nadkarni, R. Choi, J.J. Peterson, H.R. Harris, J.H. Sim, S.A. Krishnan, J. Barnett, E. Vogel, B.H. Lee, P. Zeitzoff, G.A. Brown, G. Bersuker, Proc. of Int. Integrated Rel. Workshop, 2005.
46

International
"Ultra-thin ALD-HfSiON/TiN Gate Stacks" S.A. Krishnan, M.A. Quevedo-Lopez, R. Choi, P. Kirsch, C. Young, R. Harris, J. Peterson, H.J. Li, B.H. Lee, J.C. Lee, Proc. of Int. Integrated Rel. Workshop, 2005.
45

International
"An Integrable Dual Metal Gate/High-k CMOS Solution for FD-SOI and MuGFET Technologies" Z. Zhang, S.C. Song, K. Choi, J.H. Sim, P. Majhi, B.H. Lee, Proc. of IEEE SOI conf., 2005.
44

International
"Effects of ALD TiN Metal Gate Thickness on Metal Gate /High-k Dielectric SOI FinFET Characteristics" C.Y. Kang, R. Choi, S.C. Song, B.S. Ju, M.M. Hussain, B.H. Lee, J-W. Yang, D. Pham, H-H. Tseng, IEEE SOI Conference, 2006.

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43

International
"Prospect of high-k/metal gate stack technology for future CMOS devices" B.H. Lee, P. Kirsch, P. Majhi, S.C. Song, R. Choi, G. Bersuker, 5th int. Symp. on Physics and Chemistry of SiO2 and Si-SiO2 interface, ECS Meeting, 2005, invited.
42

International
"Demonstration of High Performance Transistors with PVD Metal Gate" H.R. Harris, H.C. Wen, K. Choi, H. Alshareef, H. Luan, Y. Senzaki, C.D. Young, S.C. Song, Z. Zhang, G. Bersuker, P. Majhi, B.H. Lee, Proc. of ESSDERC, 2005, invited.

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41

International
"Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics" B.H. Lee, R. Choi, S.C. Song, J. Sim, C. Young, G. Bersuker, H.K. Park, H. Hwang, Ext. Abs. of Symp. on SSDM, 2005, invited.
40

International
"NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ ALD-TiN Gate Stacks" S.A. Krishnan, M. Quevedo, R. Harris, P.D. Kirsch, R. Choi, B.H. Lee, G. Bersuker, J. Peterson, H-J. Li, C. Young, J.C. Lee, Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
39

International
"A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors" R. Choi, B.H. Lee, H.K. Park, C.D. Young, J.H. Sim, S.C. Song, G. Bersuker, Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
38

International
"Impacts of Si Concentration in Hf-silicate on Performance and Reliability of Metal Gate CMOSFET" S.C. Song, S.H. Bae, J.H. Sim, G. Bersuker, Z. Zhang, P. Kirsch, P. Majhi, N. Moumen, P. Zeitzoff, B.H. Lee, Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
37

International
"Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode" H.K. Park, R. Choi, B.H. Lee, C.D. Young, M. Chang, J.C. Lee, H. Hwang, Ext. Abs. of Symp. on Solid State Device and Materials, 2005.
36

International
"Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2" P.D. Kirsch, S.C. Song, J.H. Sim, S. Krishnan, J. Gutt, J. Peterson, H.-J. Li, M. Quevedo-Lopez, C.D. Young, R. Choi, J. Barnett, N. Moumen, K.S. Choi, , C. Huffman, P. Majhi, M. Gardner, G. Brown, G. Bersuker, B.H. Lee, Proc. of ESSDERC, 2005.
35

International
"Work function tuning by thickness variation of metal film and dielectric surface treatment" K. Choi, H. Alshareef, P. Lysaght, H.-C. Wen, R. Harris, H. Luan, P. Majhi, B.H. Lee, Proc. of ESSDERC, 2005.
34

International
"ALD of Advanced High-k dielectric and Metal Gate Stacks for MOS Devices" Y. Senzaki, J. Gutt, G. Brown, P. Kirsch, H. Alshareef, K. Choi, H. Wen, P. Majhi, B.H. Lee, AIP Conf. Proc. 788, characterization and metrology for ULSI technology, 2005, invited.
33

International
"Physical Characterization of Novel Metal Electrodes for Hf-based Transistors" P.S. Lysaght, H.-C. Wen, H. Alshareef, K. Choi, R. Harris, H. Luan, G. Lian, M. Campin, M. Clark, B. Foran, P. Majhi, B.H. Lee, AIP Conf. Proc. 788, characterization and metrology for ULSI technology, 2005.

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32

International
"Integration of Dual Metal Gate CMOS with TaSiN and Ru Gate Electrodes on HfO2 Gate Dielectric" Z.B. Zhang, S.C. Song, C. Huffman, J. Barnett, N. Moumen, H. Alshareef, P. Majhi, M. Hussain, M.S. Akbar, J.N. Sim, S.H. Bae, B. Sassman, B.H. Lee, Proc. of VLSI, 2005.

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31

International
"Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications" H.C. Wen, H.N. Alshareef, H. Luan, K. Choi, P. Lysaght, H.R. Harris, C. Huffman, G.A. Brown, G. Bersuker, P. Zeitzoff, H. Huff, P. Majhi, B.H. Lee, Proc. of VLSI, 2005.

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30

International
"Impact of thickness of metal nitride (TiN) in Poly Si/TiN gate stack on electrical performance and reliability" S.H. Bae, S.C. Song, B.H. Lee, Proceedings of EMC, 2005.
29

International
"High-k Dielectric Process Development for Enhanced Electron Mobility in High Performance Field Effect Transistors" P.D. Kirsch, J.J. Peterson, H.-J. Li, J. Gutt, S. Krishnan, M. Quevedo-Lopez, B.H. Lee, N. Moumen, J. Barnett, P. Majhi, S.C. Song, C. Ramiller, ISTC, 2005.

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