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Total 42건 2 페이지

2006
12

International
"Charge trapping effects in high-k transistors" G. Bersuker, C.S.park, J.Sim, C.Young, R.Choi, B.H.Lee, ECS Trans. 1, p.663, 2006.

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11

International
"The influence of NH3 anneal on the crystallization kinectics of HfO2 gate dielectric films" P.S.Lysaght, J.C.Woicik, B.Foran, J.Barnett, G. Bersuker, B.H.Lee, ECS Trans. 1, p.313, 2006.

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10

International
"Low Work-Function TaN-metal gate with Gadolinium Oxide Buffer Layer on Hf-based Dielectrics" G. Thareja, S. J. Rhee, H.-C. Wen, R. Harris, P. Majhi, B. H. Lee and J. C. Lee, Proc. of DRC, 2006.

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9

International
"Relationship of HfO2 Materials Properties and Transistor Performance" P. D. Kirsch, M. A. Quevedo, G. Pante, S. Krishnan, S. C. Song, H. J. Li, J. J. Peterson, B. H. Lee, R. W. Wallace and B. E. Gnade, VLSI-TSA, 2006.

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8

International
"Electron Trapping Processes in High-k Gate Dielectrics and Nature of Traps" G. Bersuker, J. Sim, C. S. Park, C. Young, S. Nadkarni, J. Gavartin, A. Shluger, R. Choi, B. H. Lee, VLSI-TSA, 2006.

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7

International
"Carrier Recombination in High-k Dielectrics and its Impact on Transient Charge Effects in High-k Devices" C. Y. Kang, R. Choi, S. C. Song, C. D. Young, G. Bersuker, B. H. Lee and J. C. Lee, Proc. of IRPS, p.657, 2006.

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6

International
"Reliability Characteristics of Metal/High-κ PMOS with Top Interface Engineered Band Offset Dielectric (BOD)" H. R.Harris, S.Krishnan, H.C. Wen, H. Alshareef, A.Rao, P. Majhi, R. Choi, B. H. Lee, G. Bersuker and G. Brown, Proc. of IRPS, p.661, 2006.

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5

International
"Detection of Electron Trap Generation Due to Constant Voltage Stress on High-κ Gate Stacks" C.D. Young, D. Heh, S. Nadkarni, H.R. Harris, R. Choi, J.J. Peterson, J.H. Sim, S.A. Krishnan, J. Barnett, E. Vogel, B. H. Lee, P. Zeitzoff, G.A. Brown, and G. Bersuker, Proc. of IRPS, p.169, 2006.

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4

International
"Intrinsic Threshold Voltage Instability of the HfO2 Gate Stack NMOS Transistors" G. Bersuker, J. Sim, C. S. Park, C. Young, S. Nadkarni, R. Choi, B. H. Lee, Proc. of IRPS, p.179, 2006.

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3

International
"Impact of nitrogen on PBTI characteristics of HfSiON/TiN Gate Stacks" S. A. Krishnan, M.Quevedo, H.-J. Li, P.Kirsch, R.Choi, C. Young, J.Peterson, B. H. Lee, G.Bersuker an J.C. Lee, Proc. of IRPS, p.325, 2006.

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2

International
"Internal dielectric interface: SiO2/HfO2" O. Sharia, A.A.Demkov, G.Bersuker and B. H. Lee, the Bulletin of the American Physical Society, 2006.

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1

International
"Surface Preparation Techniques Used for Fabricating High-κ/Metal Gate Device Structures" J. Barnett, M. Hussain, J. J. Peterson, P. Kirsch, S.C.Song, C.S.Park, G. Bersuker, B. H. Lee and H. R. Huff, ISTC, 2006.

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