목록 게시판 리스트 옵션 검색 Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility and Vth stability Conference ECS Trans. 1, p.15 Author P.D.Kirwch, M.Quevedo-Lopez, S.A.Krishnan, S.C.Song, R.Choi, P.Majhi, Y.Senzaki, G.Bersuker, B.H.Lee Year 2006 Date 2006 학회구분 International File 2006_ESCT_PDKIRSCH.pdf (1,023.0K) 0회 다운로드 DATE : 2021-04-02 12:40:35 P.D.Kirwch, M.Quevedo-Lopez, S.A.Krishnan, S.C.Song, R.Choi, P.Majhi, Y.Senzaki, G.Bersuker, B.H.Lee, “Atomi layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility and Vth stability,” ECS Trans. 1, p.15, (2006).
