Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET
- Conference
- Ext. Abs. of SSDM, p.388
- Author
- P.D. Kirsch, M.A. Quevedo-Lopez, S. A. Krishnan, C. Krug, F. S. Aguirre, R. M. Wallace, B. H. Lee and R. Jammy
- Year
- 2006
- Date
- 2006
- 학회구분
-
International
P.D. Kirsch, M.A. Quevedo-Lopez, S. A. Krishnan, C. Krug, F. S. Aguirre, R. M. Wallace, B. H. Lee and R. Jammy, “Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET”, Ext. Abs. of SSDM, p.388, (2006).
